SMT820 High Performance Infrared TOP IR LED SMT820 consists of an AlGaAs LED mounted on the lead frame as TOP LED package and is 15mW typical of output power. It emits a spectral band of radiation at 820nm. ♦Outer dimension（Unit:mm） ♦Specifications 1) Product Name 2) Type No. 3) Chip (1) Chip Material (2) Peak Wavelength 4) Package (1) Lead Frame Die (2) Package Resin (3) Lens TOP IR LED SMT820 AlGaAs 820ｎｍ ｔｙｐ. Silver Plated PPA Resin Epoxy Resin ♦Absolute Maximum Rating Item Power Dissipation Forward Current Pulse Forward Current Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature Symbol Maximum Rated Value Unit Ambient Temperature PD IF IFP VR TOPR 190 100 500 5 -20 ~ +80 -30 ~ +80 240 mW mA mA V °C °C °C Ta=25°C Ta=25°C Ta=25°C Ta=25°C TSTG TSOL ‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us. ‡Soldering condition: Soldering condition must be completed within 3 seconds at 260°C ♦Electro-Optical Characteristics [Ta=25°C] Item Symbol Condition Minimum Forward Voltage VF IF=50mA Reverse Current IR VR=5V Total Radiated Power PO IF=50mA 8.0 Radiant Intensity IE IF=50mA 3.0 Peak Wavelength IF=50mA λP Half Width IF=50mA ∆λ Viewing Half Angle IF=50mA θ 1/2 Rise Time tr ＩF=50mA Fall Time tf ＩF=50mA ‡Total Radiated Power is measured by Photodyne #500 ‡Radiant Intensity is measured by Tektronix J-6512. Typical 1.60 15.0 6.0 820 40 ±55 60 40 Maximum 1.80 10 Unit V uA mW mW/sr nm nm deg. ns ns