SPICE MODEL: IMT4 IMT4 Lead-free Green DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · Epitaxial Planar Die Construction A SOT-26 Complementary NPN Type Available (IMX8) B2 B1 E1 Small Surface Mount Package B C Lead Free/RoHS Compliant (Note 3) "Green" Device, Note 4 and 5 C2 E2 C1 Mechanical Data H · · Case: SOT-26 · · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · Case Material: Molded Plastic, "Green" Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 K M Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ¾ ¾ 0.95 F ¾ ¾ 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 Terminals: Solderable per MIL-STD-202, Method 208 M Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). 0.10 0.20 0.15 a 0° 8° ¾ J Terminal Connections: See Diagram B2 Marking: KX7, See Page 2 F D B1 C2 E2 L E1 All Dimensions in mm C1 Ordering & Date Code Information: See Page 2 Weight: 0.016 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -50 mA Power Dissipation (Note 1) Pd 225 mW RqJA 555 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -120 ¾ ¾ V IC = -50mA Collector-Emitter Breakdown Voltage V(BR)CEO -120 ¾ ¾ V IC = -1.0mA Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ ¾ V IE = -50mA Collector Cutoff Current ICBO ¾ ¾ -0.5 mA VCB = -100V Emitter Cutoff Current IEBO ¾ ¾ -0.5 mA VEB = -4.0V hFE 180 ¾ 820 ¾ IC = -2.0mA, VCE = -6.0V VCE(SAT) ¾ ¾ -0.5 V IC = -10mA, IB = -1.0mA fT ¾ 140 ¾ MHz VCE = -12V, IC = -2.0mA, f = 100MHz OFF CHARACTERISTICS (Note 2) ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30303 Rev. 7 - 2 1 of 4 www.diodes.com IMT4 ã Diodes Incorporated Ordering Information Notes: (Note 5 & 6) Device Packaging Shipping IMT4-7-F SOT-26 3000/Tape & Reel 5. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM KX7 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September KX7 Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code N P R S T U V W X Y Z Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D 500 250 Ta = 75°C 400 hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) (see Note 1) 200 150 100 50 300 Ta = 25°C 200 Ta = -25°C 100 VCE = 6V 0 0 0 100 200 DS30303 Rev. 7 - 2 1.0 10.0 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve 2 of 4 www.diodes.com IMT4 100 IC, COLLECTOR CURRENT (mA) VCE = 6V Ta = 25°C 10.0 Ta = 75°C 1.0 Ta = -25°C 0.1 0 0.2 0.1 0.3 0.4 0.5 0.7 0.6 0.8 0.9 1000 1.0 VCE = 5V IC/IB = 10 Ta = 150°C 0.100 Ta = 25°C Ta = -50°C fT, GAIN BANDWIDTH PRODUCT (MHz) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Base-Emitter Voltage 100 0.010 10 1 1 10 100 1000 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Gain Bandwidth Product vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Voltage vs. Collector Current 7 Ta = 25°C IC, COLLECTOR CURRENT (mA) 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 6 Typical Collector Current vs. Collector-Emitter Voltage DS30303 Rev. 7 - 2 3 of 4 www.diodes.com IMT4 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30303 Rev. 7 - 2 4 of 4 www.diodes.com IMT4