DIODES MMSTA42_2

MMSTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
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Epitaxial Planar Die Construction
Complementary PNP Type Available (MMSTA92)
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
A
SOT-323
C
B C
B
E
G
H
Mechanical Data
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Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Marking Information: K3M, See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
Maximum Ratings
K
M
J
D
L
E
C
Dim
Min
Max
A
0.25
0.40
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.20
1.40
H
1.80
2.20
J
0.0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.18
0°
8°
α
All Dimensions in mm
E
B
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Value
300
300
6.0
200
200
625
Unit
V
V
V
mA
mW
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
@TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
300
300
6.0
⎯
⎯
⎯
⎯
⎯
100
100
V
V
V
nA
nA
hFE
25
40
40
⎯
⎯
VCE(SAT)
VBE(SAT)
⎯
⎯
0.5
0.9
V
V
Ccb
⎯
3.0
pF
fT
50
⎯
MHz
Test Condition
IC = 100μA, IE = 0
IC = 1.0mA, IB = 0
IE = 100μA, IC = 0
VCB = 200V, IE = 0
VCE = 6.0V, IC = 0
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 30mA, VCE = 10V
IC = 20mA, IB = 2.0mA
IC = 20mA, IB = 2.0mA
VCB = 20V, f = 1.0MHz, IE = 0
VCE = 20V, IC = 10mA,
f = 100MHz
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration pulse test used to minimize self-heating effect.
DS30175 Rev. 10 - 2
1 of 3
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MMSTA42
© Diodes Incorporated
200
2.0
IC
IB = 10
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
PD, POWER DISSIPATION (mW)
1.8
150
100
50
1.6
TA = 150°C
1.4
1.2
1.0
TA = 25°C
0.8
0.6
0.4
T A = -50°C
0.2
0
0
25
50
75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
0
200
1
1,000
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
10,000
1.0
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE = 5V
hFE, DC CURRENT GAIN
1,000
TA = 150°C
100
T A = -50°C
TA = 25°C
10
VCE = 5V
0.9
0.8
TA = -50°C
0.7
0.6
TA = 25°C
0.5
0.4
0.3
T A = 150°C
0.2
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs.
Collector Current
0.1
0.1
1,000
100
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage vs. Collector Current
100
fT, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 5V
10
1
10
1
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs.
Collector Current
DS30175 Rev. 10 - 2
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MMSTA42
© Diodes Incorporated
Ordering Information
(Note 4 & 6)
Packaging
SOT-323
Device
MMSTA42-7-F
Notes:
Shipping
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
K3M
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
2001
M
Mar
3
YM
Marking Information
2002
N
Apr
4
K3M= Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2003
P
2004
R
May
5
2005
S
Jun
6
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30175 Rev. 10 - 2
3 of 3
www.diodes.com
MMSTA42
© Diodes Incorporated