VISHAY SI9987CY-T1

Si9987
Vishay Siliconix
Buffered H-Bridge
FEATURES
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D
D
D
1.0-A H-Bridge
500-kHz Switching Rate
Shoot-Through Limited
TTL Compatible Inputs
3.8- to 13.2-V Operating Range
Surface Mount Packaging
VCM Driver
Brushed Motor Driver
Stepper Motor Driver
Power Converter
Optical Disk Drives
Power Supplies
High Performance Servo
DESCRIPTION
The Si9987 is an integrated, buffered H-bridge with TTL
compatible inputs and the capability of delivering a continuous
1.0 A @ VDD = 5.0 V (room temperature) at switching rates up
to 500 kHz. Internal logic prevents the upper and lower outputs
of either half-bridge from being turned on simultaneously. Unique
input codes allow both outputs to be forced low (for braking) or
forced to a high impedance level.
The Si9987 is available in an 8-Pin SOIC package, specified
to operate over a voltage range of 3.8 V to 13.2 V, and the
commercial temperature range of 0 to 70_C (C suffix) and –40
to 85_C (D suffix).
FUNCTIONAL BLOCK DIAGRAM, PIN CONFIGURATION AND TRUTH TABLE
SO-8
VDD
SA
1
8
OUTA
GND
2
7
INA
VDD
3
6
INB
SB
4
5
OUTB
Si9987
(3)
(7)
INA
Top View
Shoot-Through
Protection Logic
(6)
TRUTH TABLE
INB
INA
INB
OUTA
OUTB
1
0
1
0
0
1
0
1
0
0
0
0
1
1
HiZ
HiZ
(2)
(1)
GND
(8)
SA
(5)
OUTPUT
A
B
(4)
SB
ORDERING INFORMATION
Part Number
Document Number: 70864
S-02936—Rev. C, 22-Jan-01
Temperature Range
Si9987CY-T1
0 to 70_C
Si9987DY-T1
–40 to 85_C
Si9987CY
0 to 70_C
Si9987DY
–40 to 85_C
Package
Tape and Reel
Bulk (tubes)
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Si9987
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGSa
Voltage on any pin with respect to ground . . . . . . . . . . . –0.3 V to VDD +0.3 V
Voltage on pins 5, 8 with respect to GND . . . . . . . . . . . . . . –1 V to VDD +1 V
Voltage on pins 1, 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to GND +1 V
Maximum VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 A
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 150_C
Power Dissipationb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W
qJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100_C/W
Continuous IOUT Current (TJ = 135_C)c
TA = 25_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "1.02 A
TA = 70_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "0.75 A
TA = 85_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "0.65 A
Operating Temperature Range
Si9987CY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 70_C
Si9987DY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40 to 85_C
Notes
a. Device mounted with all leads soldered or welded to PC board.
b. Derate 10 mW/_C above 25_C.
c. TJ = TA + (PD x qJA), PD = Power Dissipation .
RECOMMENDED OPERATING RANGE
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8 V to 13.2 V
Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 135_C
SPECIFICATIONS
Test Conditions Unless Specified
Parameter
Symbol
VDD = 3.8 to 13.2 V
SA @ GND, SB @ GND
Limits
Mina
Typb
Maxa
Unit
Input
Input Voltage High
VINH
Input Voltage Low
VINL
2
Input Current with Input Voltage High
IINH
VIN = 2 V
Input Current with Input Voltage Low
IINL
VIN = 0 V
1
1
–1
V
m
mA
Output
IOUT = –1 A
Output Voltage Highc
VOUTH
IOUT = –500 mA
VDD = 10.8 V
10.40
VDD = 4.5 V
4.00
4.20
VDD = 10.8 V
10.60
10.68
VDD = 4.5 V
4.25
4.35
3.63
3.70
IOUT = –300 mA, VDD = 3.8 V
IOUT = 1 A
Output Voltage Lowc
VOUTL
10.56
VDD = 10.8 V
0.24
0.40
VDD = 4.5 V
0.30
0.50
VDD = 10.8 V
0.12
0.20
VDD = 4.5 V
0.15
0.25
IOUT = 300 mA, VDD = 3.8 V
0.10
0.17
0
10
IOUT = 500 mA
Output Leakage Current Low
IOLL
INA = INB w 2 V, VOUT = VDD = 13.2 V
Output Leakage Current High
IOLH
VOUT = 0, VDD = 13.2 V
Output V Clamp High
VCLH
Output V Clamp Low
VCLL
INA = INB w 2 V
–10
IOUT = 100 mA
IOUT = –100 mA
0
VDD +0.7
–0.9
VDD +0.9
–0.7
V
m
mA
V
Supply
VDD Supply Current
IDD
IN = 100 kHz, VDD = 5.5 V
1.8
2.5
mA
INA = INB = 4.5 V, VDD = 5.5 V
75
125
mA
Dynamic
Propogation Delay Time
TPLH
TPHL
VDD = 5 V
300
nS
100
Notes
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Maximum value measured at TJ = 135_C. Typical value measured at TJ = TA = 25_C (pulse width v 300 msec, duty cycle v 2%).
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Document Number: 70864
S-02936—Rev. C, 22-Jan-01
Si9987
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output High Voltage vs. Output Current
Output Low Voltage vs. Output Current
500
12
VDD = 10.8 V
400
4.5 V
VOUTL (mV)
VOUTH (V)
9
6
4.5 V
3
3.8 V
0
0.50
0.75
VDD = 3.8 V
300
10.8 V
200
100
1.00
1.25
0
0.50
1.50
0.75
Output Current (A)
1.00
1.25
1.50
Output Current (A)
Supply Current vs. Supply Voltage
Supply Current vs. Supply Voltage
200
6
f = 100 kHz
5
4
I DD (mA)
I DD – Standby ( m A)
160
120
3
2
80
1
40
0
4
6
8
10
12
14
4
VDD – Supply Voltage (V)
Supply Current vs. Temperature
8
10
12
14
Supply Current vs. Temperature
200
8
f = 100 kHz
VDD = 13.2 V
180
VDD = 13.2 V
6
160
I DD (mA)
I DD – Standby ( m A)
6
VDD – Supply Voltage (V)
140
120
4
5.5 V
100
2
5.5 V
80
60
–35
–20
–5
10
25
40
Temperature (_C)
Document Number: 70864
S-02936—Rev. C, 22-Jan-01
55
70
85
0
–35
–20
–5
10
25
40
55
70
85
Temperature (_C)
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Si9987
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Propagation Time vs. Supply Voltage
Supply Current vs. Frequency
600
15
12
400
VDD = 13.2 V
I DD (mA)
Delay Time (ns)
500
300
TPLH
200
6
5.5 V
3
TPHL
100
9
3.8 V
0
0
3
6
9
12
15
0
50
100
150
f – Frequency (kHz)
VDD – Supply Voltage (V)
Supply Current vs. Supply Voltage
ROUT vs. VDD
35
0.50
0.46
f = 500 kHz
28
0.42
TA = 135_C
R OUT ( W )
0.38
I DD (mA)
200
21
14
0.34
85_C
0.30
25_C
0.26
0.22
7
–40_C
0.18
0.14
0
0.10
4
6
8
10
12
14
2
4
6
8
VDD – Supply Voltage (v)
10
12
14
VDD
ROUT vs. Junction Temperature (TJ)
ROUT Normalized vs. Junction Temperature (TJ)
1.5
0.5
1.4
VDD = 3.8 V
VDD = 10.8 V
4.5 V
R OUT ( W )
10.8 V
5.5 V
0.3
13.2 V
0.2
R OUT Normalized ( W )
0.4
1.3
1.2
VDD = 4.5 V
1.1
1.0
0.9
0.8
0.7
0.1
–50
0
50
Temperature (_C)
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100
150
0.6
–50
–25
0
25
50
75
100
125
150
Temperature (_C)
Document Number: 70864
S-02936—Rev. C, 22-Jan-01