Si9987 Vishay Siliconix Buffered H-Bridge FEATURES APPLICATIONS D D D D D D D D D D D D D 1.0-A H-Bridge 500-kHz Switching Rate Shoot-Through Limited TTL Compatible Inputs 3.8- to 13.2-V Operating Range Surface Mount Packaging VCM Driver Brushed Motor Driver Stepper Motor Driver Power Converter Optical Disk Drives Power Supplies High Performance Servo DESCRIPTION The Si9987 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1.0 A @ VDD = 5.0 V (room temperature) at switching rates up to 500 kHz. Internal logic prevents the upper and lower outputs of either half-bridge from being turned on simultaneously. Unique input codes allow both outputs to be forced low (for braking) or forced to a high impedance level. The Si9987 is available in an 8-Pin SOIC package, specified to operate over a voltage range of 3.8 V to 13.2 V, and the commercial temperature range of 0 to 70_C (C suffix) and –40 to 85_C (D suffix). FUNCTIONAL BLOCK DIAGRAM, PIN CONFIGURATION AND TRUTH TABLE SO-8 VDD SA 1 8 OUTA GND 2 7 INA VDD 3 6 INB SB 4 5 OUTB Si9987 (3) (7) INA Top View Shoot-Through Protection Logic (6) TRUTH TABLE INB INA INB OUTA OUTB 1 0 1 0 0 1 0 1 0 0 0 0 1 1 HiZ HiZ (2) (1) GND (8) SA (5) OUTPUT A B (4) SB ORDERING INFORMATION Part Number Document Number: 70864 S-02936—Rev. C, 22-Jan-01 Temperature Range Si9987CY-T1 0 to 70_C Si9987DY-T1 –40 to 85_C Si9987CY 0 to 70_C Si9987DY –40 to 85_C Package Tape and Reel Bulk (tubes) www.vishay.com 1 Si9987 Vishay Siliconix ABSOLUTE MAXIMUM RATINGSa Voltage on any pin with respect to ground . . . . . . . . . . . –0.3 V to VDD +0.3 V Voltage on pins 5, 8 with respect to GND . . . . . . . . . . . . . . –1 V to VDD +1 V Voltage on pins 1, 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to GND +1 V Maximum VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 A Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 150_C Power Dissipationb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W qJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100_C/W Continuous IOUT Current (TJ = 135_C)c TA = 25_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "1.02 A TA = 70_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "0.75 A TA = 85_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "0.65 A Operating Temperature Range Si9987CY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 70_C Si9987DY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40 to 85_C Notes a. Device mounted with all leads soldered or welded to PC board. b. Derate 10 mW/_C above 25_C. c. TJ = TA + (PD x qJA), PD = Power Dissipation . RECOMMENDED OPERATING RANGE VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.8 V to 13.2 V Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . 135_C SPECIFICATIONS Test Conditions Unless Specified Parameter Symbol VDD = 3.8 to 13.2 V SA @ GND, SB @ GND Limits Mina Typb Maxa Unit Input Input Voltage High VINH Input Voltage Low VINL 2 Input Current with Input Voltage High IINH VIN = 2 V Input Current with Input Voltage Low IINL VIN = 0 V 1 1 –1 V m mA Output IOUT = –1 A Output Voltage Highc VOUTH IOUT = –500 mA VDD = 10.8 V 10.40 VDD = 4.5 V 4.00 4.20 VDD = 10.8 V 10.60 10.68 VDD = 4.5 V 4.25 4.35 3.63 3.70 IOUT = –300 mA, VDD = 3.8 V IOUT = 1 A Output Voltage Lowc VOUTL 10.56 VDD = 10.8 V 0.24 0.40 VDD = 4.5 V 0.30 0.50 VDD = 10.8 V 0.12 0.20 VDD = 4.5 V 0.15 0.25 IOUT = 300 mA, VDD = 3.8 V 0.10 0.17 0 10 IOUT = 500 mA Output Leakage Current Low IOLL INA = INB w 2 V, VOUT = VDD = 13.2 V Output Leakage Current High IOLH VOUT = 0, VDD = 13.2 V Output V Clamp High VCLH Output V Clamp Low VCLL INA = INB w 2 V –10 IOUT = 100 mA IOUT = –100 mA 0 VDD +0.7 –0.9 VDD +0.9 –0.7 V m mA V Supply VDD Supply Current IDD IN = 100 kHz, VDD = 5.5 V 1.8 2.5 mA INA = INB = 4.5 V, VDD = 5.5 V 75 125 mA Dynamic Propogation Delay Time TPLH TPHL VDD = 5 V 300 nS 100 Notes a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Maximum value measured at TJ = 135_C. Typical value measured at TJ = TA = 25_C (pulse width v 300 msec, duty cycle v 2%). www.vishay.com 2 Document Number: 70864 S-02936—Rev. C, 22-Jan-01 Si9987 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output High Voltage vs. Output Current Output Low Voltage vs. Output Current 500 12 VDD = 10.8 V 400 4.5 V VOUTL (mV) VOUTH (V) 9 6 4.5 V 3 3.8 V 0 0.50 0.75 VDD = 3.8 V 300 10.8 V 200 100 1.00 1.25 0 0.50 1.50 0.75 Output Current (A) 1.00 1.25 1.50 Output Current (A) Supply Current vs. Supply Voltage Supply Current vs. Supply Voltage 200 6 f = 100 kHz 5 4 I DD (mA) I DD – Standby ( m A) 160 120 3 2 80 1 40 0 4 6 8 10 12 14 4 VDD – Supply Voltage (V) Supply Current vs. Temperature 8 10 12 14 Supply Current vs. Temperature 200 8 f = 100 kHz VDD = 13.2 V 180 VDD = 13.2 V 6 160 I DD (mA) I DD – Standby ( m A) 6 VDD – Supply Voltage (V) 140 120 4 5.5 V 100 2 5.5 V 80 60 –35 –20 –5 10 25 40 Temperature (_C) Document Number: 70864 S-02936—Rev. C, 22-Jan-01 55 70 85 0 –35 –20 –5 10 25 40 55 70 85 Temperature (_C) www.vishay.com 3 Si9987 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Propagation Time vs. Supply Voltage Supply Current vs. Frequency 600 15 12 400 VDD = 13.2 V I DD (mA) Delay Time (ns) 500 300 TPLH 200 6 5.5 V 3 TPHL 100 9 3.8 V 0 0 3 6 9 12 15 0 50 100 150 f – Frequency (kHz) VDD – Supply Voltage (V) Supply Current vs. Supply Voltage ROUT vs. VDD 35 0.50 0.46 f = 500 kHz 28 0.42 TA = 135_C R OUT ( W ) 0.38 I DD (mA) 200 21 14 0.34 85_C 0.30 25_C 0.26 0.22 7 –40_C 0.18 0.14 0 0.10 4 6 8 10 12 14 2 4 6 8 VDD – Supply Voltage (v) 10 12 14 VDD ROUT vs. Junction Temperature (TJ) ROUT Normalized vs. Junction Temperature (TJ) 1.5 0.5 1.4 VDD = 3.8 V VDD = 10.8 V 4.5 V R OUT ( W ) 10.8 V 5.5 V 0.3 13.2 V 0.2 R OUT Normalized ( W ) 0.4 1.3 1.2 VDD = 4.5 V 1.1 1.0 0.9 0.8 0.7 0.1 –50 0 50 Temperature (_C) www.vishay.com 4 100 150 0.6 –50 –25 0 25 50 75 100 125 150 Temperature (_C) Document Number: 70864 S-02936—Rev. C, 22-Jan-01