PD-20710 rev. C 11/99
175BGQ045
175BGQ045J
SCHOTTKY RECTIFIER
175 Amp
Major Ratings and Characteristics
Characteristics
Description/Features
The NEW 175BGQ045 Schottky rectifier has been optimized for
ultra low forward voltage drop specifically for low voltage output in
high current AC/DC power supplies.
The proprietary barrier technology allows for reliable operation up
to 150°C junction temperature. Typical applications are in
switching power supplies, converters, reverse battery protection,
and redundant power subsystems.
175BGQ045
Units
175
A
107
°C
248
A
45
V
IFSM @ tp = 5 µs sine
8700
A
VF
0.61
V
150
°C
Guard ring for enhanced ruggedness and long term
reliability
- 55 to 150
°C
PowIRtabTM package
I F(AV) Rectangular waveform
@ TC
I DC
Maximum
VRRM
@175 Apk typical
@ TJ
TJ
range
150°C TJ operation
High Frequency Operation
Ultra low forward voltage drop
Continuous High Current operation
Case Styles
175BGQ045
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175BGQ045J
1
175BGQ045, 175BGQ045J
PD-20710 rev. C 11/99
Voltage Ratings
Part number
VR
175BGQ045
Max. DC Reverse Voltage (V)
45
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters
175BGQ Units
IF(AV) Max. Average Forward Current
IF(RMS) RMS Forward Current
IFSM
175
A
248
A
Max. Peak One Cycle Non-Repetitive
8700
Surge Current
1550
EAS
Non-RepetitiveAvalancheEnergy
IAR
Repetitive Avalanche Current
Conditions
50% duty cycle @ TC = 107°C, rectangular wave form
T C = 104°C
5µs Sine or 3µs Rect. pulse
A
40
mJ
6
A
10ms Sine or 6ms Rect. pulse
Following any rated
load condition and
with rated VRRM applied
TJ = 25 °C, IAS = 6 Amps, L = 2.0 mH
Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. V A = 1.5 x VR typical
Electrical Specifications
Parameters
175BGQ Units
Typ.
VFM
IRM
Forward Voltage Drop
(1)
(2)
Reverse Leakage Current (1)
VF(TO) Threshold Voltage
Conditions
Max.
0.53 0.56
V
@ 100A
0.64 0.69
V
@ 175A
0.48 0.52
V
@ 100A
0.61 0.64
V
@ 175A
0.6
2
mA
TJ = 25 °C
360
640
mA
TJ = 125°C
1200 2000
mA
TJ = 150 °C
0.352
V
TJ = TJ max.
mΩ
TJ = 25 °C
TJ = 150 °C
VR = rated VR
VR = 45V
rt
Forward Slope Resistance
1.5
CT
Max. Junction Capacitance
5600
pF
VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
LS
Typical Series Inductance
3.5
nH
Measured from tab to mounting plane
10,000
V/ µs
dv/dt Max. Voltage Rate of Change
(Rated V R)
(1) Pulse Width < 300µs, Duty Cycle < 2%
(2) VFM = VF(TO) + rt x IF
Thermal-Mechanical Specifications
Parameters
175BGQ Units
TJ
Max. Junction Temperature Range
-55 to 150
°C
Conditions
Tstg
Max. Storage Temperature Range
-55 to 150
°C
RthJC Max. Thermal Resistance Junction
to Case
0.25
°C/W
DCoperation
RthCS Typical Thermal Resistance, Case to
0.20
°C/W
Mounting surface , smooth and greased
5 (0.18)
g (oz.)
Min.
1.2 (10)
Max.
2.4 (20)
N*m
(Ibf-in)
Heatsink
wt
Approximate Weight
T
Mounting Torque
Case Style
2
PowIRtabTM
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175BGQ045, 175BGQ045J
PD-20710 rev. C 11/99
1000
1 00 00
R e v e rse C u rre n t - I R (m A )
T J = 150°C
T J = 125°C
100
T J = 1 5 0 °C
1 2 5 °C
1 00
1 0 0 °C
10
7 5 °C
5 0 °C
1
2 5 °C
0 .1
0 .0 1
0
5
10
15
20
25
30
35
40
45
R e v e rse V o lt a g e - V R (V )
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
(p F)
10 0 00
10
T J = 2 5 °C
Ju n c t io n C a p a c it a n c e - C
T
In stant aneous Forw ard Curren t - I F ( A)
T J = 25°C
10 0 0
1
0
0.2
0.4
0. 6
0. 8
1
1.2
1.4
1 00 0
0
10
Forw ard Voltage Drop - V FM (V)
20
30
40
50
R e v e rse V o lt a g e - VR (V )
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Thermal Impedance Z thJC (°C/W )
1
0 .1
D
D
D
D
D
=
=
=
=
=
0 .7 5
0 .5 0
0 .3 3
0 .2 5
0 .2 0
P DM
Sin gle P u ls e
(Ther m a l R esista n ce)
Notes:
t1
t2
1 . Duty factor D = t 1/ t 2
2 . Peak TJ = PD M x Z th JC+ T C
0 .0 1
0. 00 0 01
0. 00 0 1
0 .0 01
0 .0 1
0.1
1
10
t 1 , R ecta n gu lar Pu lse D u ra tio n (S econ d s)
Fig. 4 - Maximum Thermal Impedance Z thJC Characteristics
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3
175BGQ045, 175BGQ045J
150
20 0
140
17 5
A v e ra g e P o w e r L o ss - (W a t t s)
A llo w a b le C a se T e m p e ra tu r e - ( °C )
PD-20710 rev. C 11/99
130
DC
120
110
100
Squ are wav e (D = 0.5 0 )
80 % Ra ted V R a pp lie d
90
80
70
D
D
D
D
D
15 0
=
=
=
=
=
0 .2 0
0 .2 5
0 .3 3
0 .5 0
0 .7 5
12 5
R M S Lim it
DC
10 0
75
50
25
60
s e e no te (3 )
0
50
0
50
1 00
15 0
200
250
3 00
0
A v e ra g e Fo rw a rd C u rr e n t - I F(A V) (A )
50
100
15 0
200
25 0
A v e ra g e Fo rw a rd C u rre n t - I F(A V) (A )
Fig. 5 - Maximum Allowable Case Temperature
Vs. Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
N o n - Re p e t it iv e Su rg e C u rre n t - I
FSM
(A)
1 0 0 00
A t A n y R a t e d L o a d C o n d it io n
A n d W it h R a te d V
A p p lie d
RRM
F o llo w in g S u rg e
1 0 00
10
10 0
1 00 0
10 0 00
Sq u a r e W a v e Pu lse D u ra t io n - t p ( m ic ro se c )
Fig. 7 - Maximum Non-Repetitive Surge Current
L
IRFP4 60
D UT
Rg = 25 ohm
C UR R E N T
M O N IT O R
H IG H - SP E E D
SW IT C H
FR E E - W H E E L
D IO D E
+
V d = 2 5 V o lt
40 HFL4 0 S02
Fig. 8 - Unclamped Inductive Test Circuit
(3) Formula used: T C = TJ - (Pd + PdREV) x R thJC ;
Pd = Forward Power Loss = I F(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
Pd REV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
4
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175BGQ045, 175BGQ045J
PD-20710 rev. C 11/99
Ordering Information Table
Device Code
175 BGQ 045
J
2
4
1
1
-
Current Rating
2
-
Essential Part Number
3
-
Voltage code: Code = VRRM
4
-
none = PowIRtabTM standard
6
J
3
= Short Lead Version
Outline Table
Case Style PowIRtabTM
Dimensions in millimeters and (inches)
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5
175BGQ045, 175BGQ045J
PD-20710 rev. C 11/99
Outline Table
Case Style PowIRtabTM "J" version
Dimensions in millimeters and (inches)
6
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175BGQ045, 175BGQ045J
PD-20710 rev. C 11/99
***************************************************
This model has been developed by
Wizard SPICE MODEL GENERATOR (1999)
( International Rectifier Corporation )
contains Proprietary Information
This model
***************************************************
SPICE Model Diode is composed by a
simple diode plus paralled VCG2T
***************************************************
.SUBCKT 175bgq45 ANO CAT
D1 ANO 1 DMOD (0.24359)
*Define diode model
. MODEL DMOD D ( IS=1.83192228095708E-04A, N=1.05013272757567, BV=45V,
+ IBV=0.318718355472911A,RS= 0.0003020516,CJO=5.36650017916966E-08,
+VJ=0.773797902206145,XTI=2,EG=0.707245556720411)
*****************************************************
* Implementation of VCG2T
VX 1 2 DC 0V
R1 2 CAT TRES 1E-6
.MODEL TRES RES (R=1, TC1=5.6216088199529)
GP1 ANO CAT VALUE= {-ABS (I(VX)) *(EXP((((-2.339145E-03/
5.621609)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-1))+1)*5.687601E-02*ABS(V(ANO,CAT)))-1)}
*****************************************************
.ENDS 175bgq45
Thermal Model Subcircuit
.SUBCKT 175bgq45T 5 1
CTHERM1
CTHERM2
CTHERM3
CTHERM4
5
4
3
2
4
3
2
1
1.71E+3
3.63E+2
3.23E+4
3.12E+5
RTHERM1
RTHERM2
RTHERM3
RTHERM4
5
4
3
2
4
3
2
1
3.24E-2
1.52E-1
4.08E-2
1.81E-4
.ENDS 175bgq45T
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Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
7