Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC5-600 SYMBOL • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET QUICK REFERENCE DATA VR = 600 V k 1 VF ≤ 1.75 V a 2 IF(AV) = 5 A trr = 19 ns (typ) APPLICATIONS • Active power factor correction • Half-bridge lighting ballasts • Half-bridge/ full-bridge switched mode power supplies. The BYC5-600 is supplied in the SOD59 (TO220AC) conventional leaded package. PINNING PIN SOD59 (TO220AC) DESCRIPTION 1 cathode 2 anode tab tab cathode 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VRRM VRWM VR IF(AV) Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current IFRM IFSM Tstg Tj CONDITIONS Tmb ≤ 110 ˚C δ = 0.5; with reapplied VRRM(max); Tmb ≤ 89 ˚C1 Repetitive peak forward current δ = 0.5; with reapplied VRRM(max); Tmb ≤ 89 ˚C1 Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; Tj = 150˚C prior to surge with reapplied VRWM(max) Storage temperature Operating junction temperature MIN. MAX. UNIT - 600 600 500 5 V V V A - 10 A - 40 44 A A -40 - 150 150 ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance junction to ambient Rth j-a September 1998 CONDITIONS in free air. 1 MIN. TYP. MAX. UNIT - - 2.5 K/W - 60 - K/W Rev 1.100 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC5-600 ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current trr Reverse recovery time trr Reverse recovery time Irrm Peak reverse recovery current Vfr Forward recovery voltage IF = 5 A; Tj = 150˚C IF = 10 A; Tj = 150˚C IF = 5 A; VR = 600 V VR = 500 V; Tj = 100 ˚C IF = 5 A to VR = 400 V; dIF/dt = 500 A/µs IF = 5 A to VR = 400 V; dIF/dt = 500 A/µs; Tj = 125˚C IF = 5 A to VR = 400 V; dIF/dt = 500 A/µs; Tj = 125˚C IF = 10 A; dIF/dt = 100 A/µs ID IL Vin MIN. TYP. MAX. UNIT - 1.4 1.75 2.0 9 0.9 19 1.75 2.2 2.8 100 3.0 - V V V µA mA ns - 25 30 ns - 8 11 A - 9 11 V Vin Vin = 400 V d.c. Vo = 400 V d.c. IR IF 150 uH typ OUTPUT DIODE inductive load IL 500 V MOSFET Fig.1. Typical application, output rectifier in boost converter power factor correction circuit. Continuous conduction mode, where the transistor turns on whilst forward current is still flowing in the diode. September 1998 Fig.2. Typical application, freewheeling diode in half bridge converter. Continuous conduction mode, where each transistor turns on whilst forward current is still flowing in the other bridge leg diode. 2 Rev 1.100 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss 15 Forward dissipation, PF (W) BYC5-600 BYC5-600 Tmb(max) C 112.5 Vo = 1.3 V Rs = 0.09 Ohms Irrm ID D = 1.0 dIF/dt ID = IL 0.5 losses due to diode reverse recovery 125 10 0.2 0.1 time 5 I tp D= 0 1 2 3 4 5 6 Average forward current, IF(AV) (A) 137.5 VD t T 0 tp T 7 150 8 Fig.3. Maximum forward dissipation as a function of average forward current; rectangular current waveform where IF(AV) =IF(RMS) x √D. 0.2 0.15 Fig.6. Origin of switching losses in transistor due to diode reverse recovery. Diode reverse recovery switching losses, Pdsw (W) 100 f = 20 kHz Tj = 125 C VR = 400 V BYC5-600 Reverse recovery time, trr (ns) 10 A 7.5 A 7.5 A 0.1 10 A IF = 5 A IF = 5 A 0.05 Tj = 125 C VR = 400 V BYC5-600 0 100 Rate of change of current, dIF/dt (A/us) 10 100 1000 Fig.4. Typical reverse recovery switching losses in diode, as a function of rate of change of current dIF/dt. 1000 Fig.7. Typical reverse recovery time trr, as a function of rate of change of current dIF/dt. Transistor losses due to diode reverse recovery, Ptsw (W) f = 20 kHz Tj = 125 C 4 VR = 400 V 10 A 100 5 3 Rate of change of current, dIF/dt (A/us) Peak reverse recovery current, Irrm (A) BYC5-600 7.5 A 10 2 10 A IF = 5 A IF = 5 A 1 Tj = 125 C VR = 400 V BYC5-600 0 100 Rate of change of current, dIF/dt (A/us) 1 100 1000 Fig.5. Typical switching losses in transistor due to reverse recovery of diode, as a function of of change of current dIF/dt. September 1998 Rate of change of current, dIF/dt (A/us) 1000 Fig.8. Typical peak reverse recovery current, Irrm as a function of rate of change of current dIF/dt. 3 Rev 1.100 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss I dI F BYC5-600 10 F dt Forward current, IF (A) BYC5-600 Tj = 25 C Tj = 150 C 8 t rr 6 typ time max 4 Q I I R 100% 10% s 2 rrm 0 Fig.9. Definition of reverse recovery parameters trr, Irrm 20 Peak forward recovery voltage, Vfr (V) 0 1 2 Forward voltage, VF (V) 3 4 Fig.12. Typical and maximum forward characteristic IF = f(VF); Tj = 25˚C and 150˚C. BYC5-600 100mA BYC5-600 Reverse leakage current (A) Tj = 25 C IF = 10 A 10mA 15 Tj = 125 C typ 1mA 100 C 10 75 C 100uA 50 C 5 10uA 0 0 50 100 150 Rate of change of current, dIF/dt (A/ s) 1uA 200 Fig.10. Typical forward recovery voltage, Vfr as a function of rate of change of current dIF/dt. I 25 C 0 100 200 300 400 Reverse voltage (V) 500 600 Fig.13. Typical reverse leakage current as a function of reverse voltage. IR = f(VR); parameter Tj 10 F Transient thermal impedance, Zth j-mb (K/W) 1 time 0.1 VF PD 0.01 V D= tp T fr VF 0.001 1us time Fig.11. Definition of forward recovery voltage Vfr September 1998 tp T 10us t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29 10s Fig.14. Maximum thermal impedance Zth j-mb as a function of pulse width. 4 Rev 1.100 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC5-600 MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 5,08 0,6 2,4 Fig.15. TO220AC; pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 5 Rev 1.100 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss BYC5-600 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 6 Rev 1.100