Philips Semiconductors Product specification Dual rectifier diodes ultrafast FEATURES BYT28 series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V • Low forward volt drop • Fast switching • Soft recovery characteristic • High thermal cycling performance • Low thermal resistance VF ≤ 1.05 V a2 3 a1 1 IO(AV) = 10 A k 2 GENERAL DESCRIPTION trr ≤ 60 ns PINNING Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. PIN The BYT28 series is supplied in the conventional leaded SOT78 (TO220AB) package. tab SOT78 (TO220AB) DESCRIPTION 1 cathode 2 anode tab cathode 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VRRM VR Repetitive peak reverse voltage Continuous reverse voltage Tmb ≤ 147˚C IO(AV) Average rectified output current (both diodes conducting)1 Non-repetitive peak forward current per diode. MIN. BYT28 IFSM Tstg Tj Storage temperature Operating junction temperature square wave; δ = 0.5; Tmb ≤ 115 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) - MAX. -300 300 300 -400 400 400 UNIT -500 500 500 V V - 10 A - 50 55 A A -40 - 150 150 ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient per diode both diodes conducting in free air. Rth j-a MIN. TYP. MAX. UNIT - 60 4.5 3.0 - K/W K/W K/W 1 Neglecting switching and reverse current losses. October 1998 1 Rev 1.400 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYT28 series ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qs Reverse recovery charge trr Reverse recovery time Irrm Peak reverse recovery current Vfr Forward recovery voltage IF = 5 A; Tj = 150˚C IF = 10 A VR = VRRM VR = VRRM; Tj = 100 ˚C IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; dIF/dt = 100 A/µs IF = 5 A to VR ≥ 30 V; dIF/dt = 50 A/µs; Tj = 100˚C IF = 1 A; dIF/dt = 10 A/µs I dI F 9 F PF / W TYP. MAX. UNIT - 0.95 1.30 2.0 10 50 1.05 1.40 10 200 60 V V µA µA nC - 50 60 ns - 2.0 3.0 A - 2.5 - V Tmb(max) / C BYT28 Vo = 0.945 V Rs = 0.021 Ohms 8 dt MIN. D = 1.0 114 118.5 7 t 0.5 6 rr 123 127.5 5 time 0.2 4 132 0.1 3 Q I s 10% 100% I tp 2 1 I R rrm 0 Fig.1. Definition of trr, Qs and Irrm I 109.5 tp D= T 136.5 t 145.5 T 0 1 2 3 4 IF(AV) / A 5 6 141 150 8 7 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square wave where IF(AV) =IF(RMS) x √D. 6 F PF / W Tmb(max) / C BYT28 Vo = 0.945 V 123 a = 1.57 Rs = 0.021 Ohms 5 127.5 1.9 2.2 132 4 2.8 time 3 VF V fr VF 141 1 145.5 0 1 2 3 4 150 5 IF(AV) / A Fig.2. Definition of Vfr October 1998 2 0 time 136.5 4 Fig.4. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). 2 Rev 1.400 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYT28 series trr / ns 1000 1000 Qs / nC IF=5 A 5A 100 100 IF = 2 A 1A 10 10 Tj = 25 C Tj = 100 C 1 1 1 100 10 dIF/dt (A/us) Fig.5. Maximum trr at Tj = 25˚C and 100˚C; per diode 10 1.0 10 -dIF/dt (A/us) 100 Fig.8. Maximum Qs at Tj = 25˚C; per diode. Irrm / A 10 Transient thermal impedance, Zth j-mb (K/W) 1 IF= 5 A 1 0.1 IF=1A 0.1 PD 0.01 Tj = 25 C Tj = 100 C 0.01 10 -dIF/dt (A/us) 1 0.001 1us 100 Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C; per diode. 15 tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYQ28E 10s Fig.9. Transient thermal impedance per diode Zth = f(tp) BYQ28 IF / A Tj=150C Tj=25C 10 max 5 typ 0 0 0.5 VF / V 1 1.5 Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1998 3 Rev 1.400 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYT28 series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.10. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1998 4 Rev 1.400 Philips Semiconductors Product specification Dual rectifier diodes ultrafast BYT28 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1998 5 Rev 1.400