FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies(SMPS), such as • Low Gate Charge Qg results in Simple Drive Requirement • PFC Boost • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Two-Switch Forward Converter • Single Switch Forward Converter • Flyback Converter • Reduced rDS(ON) • Buck Converter • Reduced Miller Capacitance and Low Input Capacitance • High Speed Switching • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature Package Symbol JEDEC TO-247 SOURCE DRAIN GATE D G DRAIN (FLANGE) S Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Ratings 500 Units V ±30 V 27 A Drain Current ID PD TJ, TSTG Continuous (TC = 25oC, VGS = 10V) o Continuous (TC = 100 C, VGS = 10V) 19 A Pulsed (Note 1) 108 A Power dissipation Derate above 25oC 450 3 W W/oC Operating and Storage Temperature Soldering Temperature for 10 seconds Mounting Torque, 8-32 or M3 Screw -55 to 175 o C 300 (1.6mm from case) o C 10ibf*in (1.1N*m) Thermal Characteristics RθJC Thermal Resistance Junction to Case RθCS Thermal Resistance Case to Sink, Flat, Greased Surface RθJA Thermal Resistance Junction to Ambient ©2002 Fairchild Semiconductor Corporation 0.33 0.24 TYP 40 o C/W oC/W o C/W FDH27N50 Rev. A2 FDH27N50 August 2002 Device Marking FDH27N50 Device FDH27N50 Package TO-247 Reel Size Tube Tape Width - Quantity 30 Electrical Characteristics Tc = 25°C (unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units 500 - - V - 0.64 - V/°C Statics BVDSS Drain to Source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250µA, VGS = 0V Reference to 25oC ID = 1mA rDS(ON) Drain to Source On-Resistance VGS = 10V, ID = 13.5A - 0.17 0.19 Ω VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 3.3 4.0 V µA IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current Forward Transconductance VDS = 500V TC =25oC - - 25 VGS = 0V TC = 150oC - - 250 VGS = ±30V - - ±100 VDS = 50V, ID = 13.5A 11 - - S - 56 67 nC nA Dynamics gfs Qg(TOT) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge td(ON) tr td(OFF) tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VGS = 10V VDS = 400V ID = 27A VDD = 250V ID = 27A RG = 4.3Ω RD = 9.3Ω VDS = 25V, VGS = 0V f = 1MHz - 17 20 nC - 18 22 nC - 14 - ns - 54 - ns - 47 - ns - 54 - ns - 3550 - pF - 409 - pF - 22 - pF 2552 - - mJ - - 27 A - - 27 A - - 108 A Avalanche Characteristics EAS Single Pulse Avalanche Energy (Note 2) IAR Avalanche Current Drain-Source Diode Characteristics IS Continuous Source Current (Body Diode) MOSFET symbol showing the G integral reverse p-n junction diode. D ISM Pulsed Source Current (Note 1) (Body Diode) VSD Source to Drain Diode Voltage ISD = 27A - 0.89 1.2 V Reverse Recovery Time ISD = 27A, dISD/dt = 100A/µs - 563 714 ns Reverse Recovered Charge ISD = 27A, dISD/dt = 100A/µs - 9.2 14 µC trr QRR S Notes: 1: Repetitive rating; pulse width limited by maximum junction temperature 2: Starting TJ = 25°C, L = 7mH, IAS = 27A ©2002 Fairchild Semiconductor Corporation FDH27N50 Rev. A2 FDH27N50 Package Marking and Ordering Information FDH27N50 Typical Characteristics 200 TJ = 25oC VGS DESCENDING 100 10V 7V 6V 5.5V 5V 4.5V ID, DRAIN TO SOURCE CURRENT (A) ID, DRAIN TO SOURCE CURRENT (A) 200 10 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1 1 10 100 TJ = 175oC VGS DESCENDING 10V 6V 5.5V 5V 4.5V 4V 10 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 1 1 100 10 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 80V 90 ID , DRAIN CURRENT (A) Figure 2. Output Characteristics 80 70 60 50 40 30 TJ = 175oC TJ = 25oC 20 10 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 NORMALIZED DRAIN to SOURCE ON RESISTANCE Figure 1. Output Characteristics 100 3.5 3.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.5 2.0 1.5 1.0 0.5 VGS = 10V, ID = 13.5A 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. Transfer Characteristics Figure 4. Normalized Drain To Source On Resistance vs Junction Temperatrue 10000 VGS , GATE TO SOURCE VOLTAGE (V) 12 VGS = 0V, f = 1MHz C, CAPACITANCE (pF) 100 VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) CISS 1000 COSS 100 CRSS 10 1 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 5. Capacitance vs Drain To Source Voltage ©2002 Fairchild Semiconductor Corporation ID = 27A 10 100V 250V 8 6 400V 4 2 0 0 10 20 30 40 50 60 70 Qg, GATE CHARGE (nC) Figure 6. Gate Charge Waveforms For Constant Gate Current FDH27N50 Rev. A2 FDH27N50 60 200 100 50 ID, DRAIN CURRENT (A) ISD , SOURCE TO DRAIN CURRENT (A) Typical Characteristics (Continued) 40 30 TJ = 175oC TJ = 25oC 20 100µs 10 OPERATION IN THIS AREA LIMITED BY RDS(ON) 1ms 10ms DC 1 10 TC = 25oC 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 1.1 10 100 1000 VDS , DRAIN TO SOURCE VOLTAGE (V) VSD , SOURCE TO DRAIN VOLTAGE (V) Figure 7. Body Diode Forward Voltage vs Body Diode Current Figure 8. Maximum Safe Operating Area 30 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (°C) ZθJC , NORMALIZED THERMAL IMPEDANCE Figure 9. Maximum Drain Current vs Case Temperature 100 0.50 0.20 0.10 10-1 t1 0.05 PD t2 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) Figure 10. Normalized Maximum Transient Thermal Impedance ©2002 Fairchild Semiconductor Corporation FDH27N50 Rev. A2 FDH27N50 Test Circuits and Waveforms VDS BVDSS tP VDS L IAS VDD VARY tP TO OBTAIN + RG REQUIRED PEAK IAS VDD - VGS DUT tP IAS 0V 0 0.01Ω tAV Figure 11. Unclamped Energy Test Circuit Figure 12. Unclamped Energy Waveforms VDS Qg(TOT) RL VDS VGS VGS = 10V + VDD VGS - VGS = 1V DUT 0 Ig(REF) Qg(TH) Qgs Qgd Ig(REF) 0 Figure 13. Gate Charge Test Circuit Figure 14. Gate Charge Waveforms VDS tON tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% + VGS VDD - 10% 10% 0 DUT 90% RGS VGS VGS 0 Figure 15. Switching Time Test Circuit ©2002 Fairchild Semiconductor Corporation 10% 50% 50% PULSE WIDTH Figure 16. Switching Time Waveform FDH27N50 Rev. A2 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTâ CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrenchâ MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERâ OPTOLOGICâ SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETâ VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I1