Integrated 500 mA Load Switch with Quad Signal Switch ADP1190 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Low input voltage range: 1.4 V to 3.6 V Power switch: low RDSON of 60 mΩ at 3.6 V, with active discharge 4 normally open SPST signal switches: RDSON of 2 Ω at 1.8 V with active pull-down on one side 500 mA continuous operating current Built-in level shift for control logic that can be operated by 1.2 V logic Ultralow shutdown current: <0.7 μA Ultrasmall 1.2 mm × 1.6 mm × 0.5 mm, 12-ball, 0.4 mm pitch WLCSP P S1 T1 N P S2 T2 N P S3 T3 N APPLICATIONS P Mobile phones SIM card disconnect switches Digital cameras and audio devices Portable and battery-powered equipment S4 T4 N OFF 5ms DEBOUNCE EN GND ON 4MΩ LOAD SWITCH 11259-001 OUT IN Figure 1. GENERAL DESCRIPTION The ADP1190 is an integrated high-side load switch with four signal switches, designed for operation from 1.4 V to 3.6 V. This load switch provides power domain isolation for extended power battery life. The load switch is a low on-resistance P-channel MOSFET that supports up to 500 mA of continuous load current and minimizes power loss. Integrated with the load switch are four normally open 2 Ω SPST signal switches. Rev. 0 Aside from its excellent operating performance, the ADP1190 occupies minimal printed circuit board (PCB) space with an area less than 1.92 mm2 and a height of 0.50 mm. The ADP1190 is available in an ultrasmall 1.2 mm × 1.6 mm, 12-ball, 0.4 mm pitch WLCSP. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2013 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com ADP1190 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Thermal Resistance .......................................................................4 Applications ....................................................................................... 1 ESD Caution...................................................................................4 Functional Block Diagram .............................................................. 1 Pin Configuration and Function Descriptions..............................5 General Description ......................................................................... 1 Typical Performance Characteristics ..............................................6 Revision History ............................................................................... 2 Theory of Operation .........................................................................9 Specifications..................................................................................... 3 Application Block Diagram ........................................................... 10 Timing Diagram ........................................................................... 3 Outline Dimensions ....................................................................... 11 Absolute Maximum Ratings............................................................ 4 Ordering Guide .......................................................................... 11 Thermal Data ................................................................................ 4 REVISION HISTORY 4/13—Revision 0: Initial Version Rev. 0 | Page 2 of 12 Data Sheet ADP1190 SPECIFICATIONS VIN = 1.8 V, VEN = VIN, ILOAD = 200 mA, TA = 25°C, unless otherwise noted. Table 1. Parameter INPUT VOLTAGE RANGE EN INPUT EN Input Threshold Logic High Voltage Logic Low Voltage EN Input Pull-Up Resistance Symbol VIN Test Conditions/Comments TJ = −40°C to +85°C Min 1.4 VEN_TH 1.4 V < VIN < 1.8 V, TJ = −40°C to +85°C (active low) 1.8 V ≤ VIN ≤ 3.6 V, TJ = −40°C to +85°C (active low) 1.4 V ≤ VIN ≤ 3.6 V 1.4 V ≤ VIN ≤ 3.6 V (chip enable) 0.35 0.45 1.2 VIH VIL REN CURRENT Ground Current 1 Shutdown Current IGND IOFF Analog Switch Off Current IA_OFF LOAD SWITCH VIN TO VOUT RESISTANCE SIGNAL SWITCH RESISTANCE Max 3.6 Unit V 1.2 1.2 V V V V MΩ 0.35 4 OUT open, TJ = −40°C to +85°C EN = VIN or open EN = VIN or open, TJ = −40°C to +85°C Into S1, EN = VIN or open 2 0.4 µA µA µA µA VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V VIN = 2.5 V, ILOAD = 200 mA, EN = 1.5 V VIN = 1.8 V, ILOAD = 200 mA, EN = 1.5 V, TJ = −40°C to +85°C 60 80 100 mΩ mΩ mΩ Maximum value of analog input sweep VIN = 3.6 V, ILOAD = 10 mA, EN = GND VIN = 2.5 V, ILOAD = 10 mA, EN = GND VIN = 1.8 V, ILOAD = 10 mA, EN = GND VIN = 3.6 V, ILOAD = 10 mA, EN = GND VIN = 1.8 V, ILOAD = 10 mA, EN = GND 0.6 1 2.0 0.5 1 Ω Ω Ω Ω Ω 0.7 2 RDSON RDSON RDS Flatness OUTPUT DISCHARGE RESISTANCE RDIS −3 dB BANDWIDTH VOUT TIME Turn-On Delay Time Turn-Off Delay Time 1 Typ 170 215 Ω BW3dB On load switch output and each analog switch output, T1, T2, T3, and T4 VIN = 3.6 V, RLOAD = 50 Ω, CLOAD = 5 pF, see Figure 23 50 MHz tON_DLY tOFF_DLY ILOAD = 200 mA, EN = GND, CLOAD = 0. 1 μF VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V, CLOAD = 0.1 μF 5 4 ms μs Ground current includes EN pull-down current. TIMING DIAGRAM TURN-ON DELAY TURN-OFF DELAY 90% TURN-ON TIME TURN-OFF TIME Figure 2. Timing Diagram Rev. 0 | Page 3 of 12 11259-004 10% ADP1190 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 2. Parameter IN to GND OUT to GND Sx to GND Tx to GND EN to GND Continuous Load Switch Current TA = 25°C TA = 85°C Continuous Diode Current Storage Temperature Range Junction Temperature Operating Junction Temperature Range Operating Ambient Temperature Range Soldering Conditions Rating −0.3 V to +4.0 V −0.3 V to VIN −0.3 V to +4.0 V −0.3 V to +4.0 V −0.3 V to +4.0 V ±1 A ±500 mA −50 mA −65°C to +150°C +150°C −40°C to +125°C −40°C to +85°C JEDEC J-STD-020 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL DATA Absolute maximum ratings apply individually only, not in combination. The ADP1190 can be damaged when the junction temperature limits are exceeded. Monitoring ambient temperature does not guarantee that TJ is within the specified temperature limits. In applications with high power dissipation and poor thermal resistance, the maximum ambient temperature may need to be derated. In applications with moderate power dissipation and low PCB thermal resistance, the maximum ambient temperature can exceed the maximum limit as long as the junction temperature is within specification limits. The junction temperature (TJ) of the device is dependent on the ambient temperature (TA), the power dissipation of the device (PD), and the junction-to-ambient thermal resistance of the package (θJA). The junction-to-ambient thermal resistance (θJA) of the package is based on modeling and calculation using a 4-layer board. The junction-to-ambient thermal resistance is highly dependent on the application and board layout. In applications where high maximum power dissipation exists, close attention to thermal board design is required. The value of θJA may vary, depending on PCB material, layout, and environmental conditions. The specified value of θJA is based on a 4-layer, 4 in. × 3 in. circuit board. See JESD51-7 and JESD51-9 for detailed information on the board construction. For additional information, see the AN-617 Application Note, Wafer Level Chip Scale Package, available at www.analog.com. ΨJB is the junction-to-board thermal characterization parameter with units of °C/W. ΨJB of the package is based on modeling and calculation using a 4-layer board. JESD51-12, Guidelines for Reporting and Using Electronic Package Thermal Information, states that thermal characterization parameters are not the same as thermal resistances. ΨJB measures the component power flowing through multiple thermal paths rather than through a single path as in thermal resistance, θJB. Therefore, ΨJB thermal paths include convection from the top of the package as well as radiation from the package, factors that make ΨJB more useful in real-world applications. Maximum junction temperature (TJ) is calculated from the board temperature (TB) and power dissipation (PD) using the formula TJ = TB + (PD × ΨJB) See JESD51-8 and JESD51-12 for more detailed information about ΨJB. THERMAL RESISTANCE θJA and ΨJB are specified for the worst-case conditions, that is, a device soldered in a circuit board for surface-mount packages. Table 3. Thermal Resistance Package Type 12-Ball WLCSP ESD CAUTION Maximum junction temperature (TJ) is calculated from the ambient temperature (TA) and power dissipation (PD) using the formula TJ = TA + (PD × θJA) Rev. 0 | Page 4 of 12 θJA 130 ΨJB 29.2 Unit °C/W Data Sheet ADP1190 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS ADP1190 1 2 3 GND T1 S1 EN T2 S2 IN T3 S3 OUT T4 S4 A B C TOP VIEW (BALL SIDE DOWN) Not to Scale 11259-002 D Figure 3. Pin Configuration Table 4. Pin Function Descriptions Pin No. A1 B1 C1 D1 A2 B2 C2 D2 A3 B3 C3 D3 Mnemonic GND EN IN OUT T1 T2 T3 T4 S1 S2 S3 S4 Description Ground. Enable Input, Active Low. Input Voltage. Load Switch Output Voltage. Channel 1 Analog Switch. Connect to the SIM card socket (has active discharge). Channel 2 Analog Switch. Connect to the SIM card socket (has active discharge). Channel 3 Analog Switch. Connect to the SIM card socket (has active discharge). Channel 4 Analog Switch. Connect to the SIM card socket (has active discharge). Channel 1 Analog Switch. Connect to the microcontroller. Channel 2 Analog Switch. Connect to the microcontroller. Channel 3 Analog Switch. Connect to the microcontroller. Channel 4 Analog Switch. Connect to the microcontroller. Rev. 0 | Page 5 of 12 ADP1190 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS VIN = 1.8 V, VEN = VIN, CIN = COUT = 1 µF, TA = 25°C, unless otherwise noted. 0.07 0.14 5mA 10mA 50mA 100mA 250mA 500mA 0.05 0.08 0.06 0.04 0.04 0.03 0.02 1.6 2.0 2.4 2.8 3.2 3.6 VIN (V) 0 10 11259-005 0 1.2 Figure 7. Load Switch Voltage Drop vs. Load Current, Different Input Voltages 1.0 0.12 0.9 0.10 GROUND CURRENT (µA) 0.8 RDSON (Ω) 0.06 0.04 10mA 50mA 100mA 250mA 500mA 0 –40 –5 25 55 85 TEMPERATURE (°C) 0.7 5mA 10mA 50mA 100mA 250mA 500mA 0.6 0.5 0.4 0.3 0.2 0.1 0 1.2 11259-006 0.02 1000 100 ILOAD (mA) Figure 4. Load Switch RDSON vs. Input Voltage (VIN), Different Load Currents 0.08 11259-008 0.01 0.02 1.6 2.0 2.4 2.8 3.2 11259-009 RDSON (Ω) 0.10 0.06 VOLTAGE DROP (V) 0.12 1.4V 1.5V 1.6V 1.8V 2.0V 2.4V 2.8V 3.0V 3.3V 3.6V 3.6 VIN (V) Figure 8. Ground Current vs. Input Voltage, Different Load Currents Figure 5. Load Switch RDSON vs. Temperature, Different Load Currents, VIN = 1.8 V 0.7 0.09 0.08 0.6 RDSON (Ω) 0.06 0.05 0.04 0.03 10mA 50mA 100mA 250mA 500mA 0.01 0 –40 –5 25 TEMPERATURE (°C) 55 85 0.4 0.3 0.2 10mA 50mA 100mA 250mA 500mA 0.1 11259-007 0.02 0.5 Figure 6. Load Switch RDSON vs. Temperature, Different Load Currents, VIN = 3.6 V Rev. 0 | Page 6 of 12 0 –40 –5 25 55 85 TEMPERATURE (°C) Figure 9. Ground Current vs. Temperature, Different Load Currents, VIN = 1.8 V 11259-010 GROUND CURRENT (µA) 0.07 Data Sheet ADP1190 1.2 4.0 3.6V 2.2V 1.8V 1.6V 1.4V 3.5 3.0 RDSON (Ω) 0.8 0.6 2.0 1.5 1.0 10mA 50mA 100mA 250mA 500mA 0 –40 –5 25 55 0.5 85 0 TEMPERATURE (°C) 0 0.4 1.2 1.6 2.0 2.4 2.8 3.2 3.6 Figure 13. Signal Switch RDSON vs. Analog Switch Voltage 10 1.4V 1.6V 1.8V 2.4V 2.8V 3.3V 3.6V –40°C –5°C +25°C +55°C +85°C 9 8 7 RDSON (Ω) 0.5 0.8 ANALOG SWITCH VOLTAGE (V) Figure 10. Ground Current vs. Temperature, Different Load Currents, VIN = 3.6 V 0.6 0.4 11259-014 0.2 SHUTDOWN CURRENT (µA) 2.5 0.4 11259-011 GROUND CURRENT (µA) 1.0 0.3 0.2 6 5 4 3 2 0.1 –10 10 30 50 70 90 TEMPERATURE (°C) 0 11259-012 –30 Figure 11. Shutdown Current vs. Temperature, Different Input Voltages 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Figure 14. Signal Switch RDSON vs. Analog Switch Voltage and Temperature, VIN = 1.4 V 3.0 –40°C –5°C +25°C +55°C +85°C –40°C –5°C +25°C +55°C +85°C 2.5 1.4 2.0 1.2 RDSON (Ω) GROUND CURRENT (µA) 1.6 0.4 ANALOG SWITCH VOLTAGE (V) 2.0 1.8 0.2 11259-015 1 0 –50 1.0 0.8 1.5 1.0 0.6 0.4 0.5 1.6 2.0 2.4 VIN (V) 2.8 3.2 3.6 0 11259-013 0 1.2 Figure 12. No Load Ground Current vs. Input Voltage and Temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ANALOG SWITCH VOLTAGE (V) 1.6 1.8 11259-016 0.2 Figure 15. Signal Switch RDSON vs. Analog Switch Voltage and Temperature, VIN = 1.8 V Rev. 0 | Page 7 of 12 ADP1190 Data Sheet 3.0 T –40°C –5°C +25°C +55°C +85°C 2.5 ENABLE RDSON (Ω) 2.0 1 1.5 1.0 VOUT 0.5 0.4 0 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 ANALOG SWITCH VOLTAGE (V) CH1 1.0V BW CH3 2.0V BW 11259-017 0 M2.0ms T 10.40% A CH1 40.0mV 11259-020 3 Figure 19. Enable Debounce Behavior, VIN = 1.8 V Figure 16. Signal Switch RDSON vs. Analog Switch Voltage and Temperature, VIN = 3.6 V T T ENABLE ENABLE 1 T1 1 2 VOUT VOUT CH2 1.0V BW M1.0ms T 10.80% A CH1 880mV 11259-018 CH1 2.0V BW CH3 1.0V BW CH1 1.0V BW CH3 2.0V BW T ENABLE 1 T1 2 VOUT M1.0ms T 65.40% A CH2 1.08V 11259-019 3 CH2 2.0V BW A CH1 1.08V Figure 20. Enable Debounce Behavior, VIN = 3.6 V Figure 17. Typical Turn-On Delay Time, VIN = 1.8 V, 50 mA Load CH1 2.0V BW CH3 2.0V BW M2.0ms T 10.00% Figure 18. Typical Turn-On Delay Time, VIN = 3.6 V, 100 mA Load Rev. 0 | Page 8 of 12 11259-021 3 3 Data Sheet ADP1190 THEORY OF OPERATION The ADP1190 is a high-side load switch integrated with four signal switches. The load switch and signal switches are turned on by a low signal on the EN pin. A 4 MΩ pull-up resistor on this pin allows it to be driven by an open-collector or mechanical switch. When the part is disabled, the T1 to T4 pins are actively pulled down with a nominal resistance of 215 Ω. There is a 5 ms debounce counter on EN for use with a mechanical EN switch. That is, EN must be held low for 5 ms before the part is enabled. If EN transitions high before this timeout, the counter is reset and starts a new 5 ms count. The signal path is controlled by a PMOS/NMOS transmission gate with an on resistance of 2 Ω. Break-before-make logic control ensures that the active pull-down is off before the signal path is enabled. In addition to these features, the ADP1190 occupies minimal printed circuit board (PCB) space with an area less than 1.92 mm2 and a height of 0.50 mm. The ADP1190 is available in an ultrasmall 1.2 mm × 1.6 mm, 12-ball, 0.4 mm pitch WLCSP. P S1 N P S2 N P S3 N P S4 N OFF 5ms DEBOUNCE EN T1 T2 T3 T4 GND ON 4MΩ OUT 11259-023 IN Figure 21. Block Diagram with ESD Protection Devices Rev. 0 | Page 9 of 12 ADP1190 Data Sheet APPLICATION BLOCK DIAGRAM MICROCONTROLLER CONNECTOR S1 SIM CARD T1 P I/O N S2 T2 P I/O N S3 T3 P RST N S4 T4 P CLK N GND GND EN 4MΩ OUT IN VCC 11259-003 VIN = 1.4V TO 3.6V Figure 22. Typical Application 50Ω VS P N VOUT NETWORK ANALYZER 11259-022 50Ω Figure 23. Bandwidth Measurement Setup Rev. 0 | Page 10 of 12 Data Sheet ADP1190 OUTLINE DIMENSIONS 1.24 1.20 1.16 BOTTOM VIEW (BALL SIDE UP) 3 2 1 A BALL A1 IDENTIFIER 1.64 1.60 1.56 1.20 REF B C D 0.40 BSC TOP VIEW (BALL SIDE DOWN) SEATING PLANE 0.330 0.300 0.270 END VIEW 0.80 REF COPLANARITY 0.04 0.300 0.260 0.220 0.230 0.200 0.170 02-22-2013-A 0.560 0.500 0.440 Figure 24. 12-Ball Wafer Level Chip Scale Package [WLCSP] (CB-12-10) Dimensions shown in millimeters ORDERING GUIDE Model 1 ADP1190ACBZ-R7 1 Temperature Range −40°C to +85°C Package Description 12-Ball Wafer Level Chip Scale Package [WLCSP] Z = RoHS Compliant Part. Rev. 0 | Page 11 of 12 Package Option CB-12-10 Branding LNE ADP1190 Data Sheet NOTES ©2013 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D11259-0-4/13(0) Rev. 0 | Page 12 of 12