PERKINELMER VTE3374LA

GaAlAs Infrared Emitting Diodes
VTE3372LA, 74LA
Long T-1 (3 mm) Plastic Package — 880 nm
PACKAGE DIMENSIONS inch (mm)
CASE 50A Long T-1 (3 mm)
CHIP SIZE: .011" x .011"
DESCRIPTION
This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small
area, GaAlAs, 880 nm, high efficiency IRED die.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Continuous Current:
Derate above 30°C:
Peak Forward Current, 10 µs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
Maximum Reverse Voltage:
Maximum Reverse Current @ VR = 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ IF = 20 mA
Rise:1.0 µs Fall: 1.0 µs
Lead Soldering Temperature:
(1.6 mm from case, 5 seconds max.)
-40°C to 100°C
100 mW
1.43 mW/°C
50 mA
0.71 mA/°C
2.5 A
-.8%/°C
5.0V
10 µA
880 nm
14 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Output
Irradiance
Part Number
Ee
Condition
mW/cm2
Forward Drop
Radiant
Intensity
Half Power Beam
Angle
Total Power
Test
Current
VF
Ie
PO
IFT
@ IFT
Volts
Typ.
Max.
distance
Diameter
mW/sr
mW
θ1/2
Min.
Typ.
mm
mm
Min.
Typ.
mA
(Pulsed)
VTE3372LA
2.0
2.6
10.16
2.1
2.0
3.0
20
1.3
1.8
±10°
VTE3374LA
4.0
5.2
10.16
2.1
4.1
5.0
20
1.3
1.8
±10°
Typ.
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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