GaAlAs Infrared Emitting Diodes VTE3372LA, 74LA Long T-1 (3 mm) Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 50A Long T-1 (3 mm) CHIP SIZE: .011" x .011" DESCRIPTION This narrow beam angle 3 mm diameter plastic packaged emitter is suitable for use in optical switch applications. It contains a small area, GaAlAs, 880 nm, high efficiency IRED die. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise:1.0 µs Fall: 1.0 µs Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) -40°C to 100°C 100 mW 1.43 mW/°C 50 mA 0.71 mA/°C 2.5 A -.8%/°C 5.0V 10 µA 880 nm 14 pF 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee Condition mW/cm2 Forward Drop Radiant Intensity Half Power Beam Angle Total Power Test Current VF Ie PO IFT @ IFT Volts Typ. Max. distance Diameter mW/sr mW θ1/2 Min. Typ. mm mm Min. Typ. mA (Pulsed) VTE3372LA 2.0 2.6 10.16 2.1 2.0 3.0 20 1.3 1.8 ±10° VTE3374LA 4.0 5.2 10.16 2.1 4.1 5.0 20 1.3 1.8 ±10° Typ. Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 121