TBA120T TELEFUNKEN Semiconductors FM IF amplifier and demodulator Technology: Bipolar Features Input and demodulator provided for operating with ceramic-resonators No selection of volume-input characteristics Independent sound output for VTR and headphone Additional sound input High ripple rejection High residual carrier suppression prevents harmonic distortions Case: 14 pin dual inline plastic Figure 1 Block diagram Pin Configuration Pin 1 2, 13 3 4 5 Symbol GND Vi(AF) Vref V5 Rev. A1: 20.12.1994 Function Ground Feedback AF input – SCART Reference voltage Volume control Pin 6,7,9,10 8 11 12 14 Symbol Vo(AF)1 VS Vo(AF)2 Vi(IF) Function FM demodulator filter AF output – controlled Supply voltage AF output – uncontrolled IF input 1 TBA120T TELEFUNKEN Semiconductors Absolute Maximum Ratings Reference point pin 1, unless otherwise specified Parameters Supply voltage Pin 11 Volume setting voltage Pin 5 Reference supply current Pin 4 Power dissipation Tamb = 60°C Ambient temperature range Storage temperature range Symbol VS V5 IRef Ptot Tamb Tstg Value 18 6 5 400 –15 to +70 –25 to +125 Unit V V mA mW °C °C Electrical Characteristics Tamb = +25°C, VS = 12 V, f = 5.5 MHz, Figure 3, reference point pin 1, unless otherwise specified Parameters Supply voltage range Supply current Reference voltage Output resistance Frequency range IF voltage gain Limited IF output voltage Input limiting voltage Input impedance AM rejection DC voltage at AF output Ripple rejection IF residual voltage AF output voltage Output resistance AF voltage amplification AF damping Volume setting range Input resistance Mute function Switching current Switching voltage 2 Test Conditions / Pins Pin 11 Pin 11 Pin 4 Pin 4 Pin 6/14 Pin 6 – 10 f = 50 kHz, fmod = 1 kHz Pin 14 Pin 14 m = 30 %, f = 50 kHz, Vi = 500 V, fmod = 1 kHz Vi = 0 Pin 8 Pin 12 Pin 11/8 Pin 11/12 without de-emphasis capacitor Pin 8 Pin 12 Vi = 10 mV, f =50 kHz, fmod = 1 kHz, R5 = 20 k Pin 8 Pin 12 Pin 8, 12 R5 = 20 k, Pin 8/3 R5 = 13 k, Fig. 3 Pin 8 Pin 8 Pin 3 Pin 2 or 13 Figure 2 Symbol VS IS VoRef rRef f GIF Vo(IF)pp Vi(IF) Ri Ci kAM Min. 10 9.5 4.2 50 Typ. 4.8 12 0 to 12 68 250 30 800 5 60 Max. 18 17.5 5.5 Unit V mA V MHz dB mV 60 V pF dB Vo(AF)1 Vo(AF)2 kBr kBr 4 5.6 35 30 V V dB Vo(IF)1 Vo(IF)2 20 30 mV 900 650 mV mV 1.1 7.5 30 85 2 34 k dB dB dB k 400 A Vo(AF)1 Vo(AF)2 ro Gv1 –Gv1 Vo(AF)1 ri 650 400 24 70 Isw Vmute 3 V Rev. A1: 20.12.1994 TBA120T TELEFUNKEN Semiconductors Figure 2 Figure 3 Test circuit Rev. A1: 20.12.1994 3 TBA120T TELEFUNKEN Semiconductors Dimensions in mm Package: JEDEC MO 001, DIP 14-leads We reserve the right to make changes to improve technical design without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax Number: 49 ( 0 ) 7131 67 2423 4 Rev. A1: 20.12.1994