TEMIC U4793B-FP

U4793B
Overload Monitoring with Resistive Load, VT = 44.5 mV
Description
The IC U4793B in bipolar circuit, is designed to monitor
overload or a short circuit in automotive or industrial
applications. The threshold is tied to V4,6 = VS – VT
whereas VT = 44.5 mV. It is independent of the supply
voltage, VS. If the voltage drop across shunt resistor, Rsh,
exceeds this value, the output is turned on, otherwise the
output is turned off.
Without supply voltage or open input Pin 8, the output is
turned off. The output breakdown voltage is determined
by the Z-diodes Z3 and Z5 with a typical value of
VZ = 22 V.
A not used comparator input must be connected to Pin 7.
Features
D
D
D
D
D
D Interference and damage–protection
10 kV – ESD protection
according to VDE 0839
Two comparators with common reference
Tight threshold tolerance
D EMI protection
Constant threshold
D Reversal polarity protection
NPN output
D Load-dump protection
Ordering Information
Extended Type Number
U4793B
U4793B–FP
Package
DIP8
SO8
Remarks
Block Diagram
VS
VBatt
2
Rsh
7
Z2
+
–
4
Rsh
5
OUT1
3
OUT2
&
Z5
0.6 VS
–
+
8
+
–
&
6
Z3
1
Load
R1
150 W
95 10608
Figure 1. Schematic and application circuit
TELEFUNKEN Semiconductors
Rev. A2, 06-Mar-97
1 (5)
U4793B
Pin Description
GND
1
8
Input
switch
VS
2
7
VRef
OUT2
3
6
IN2
IN1
4
5
OUT1
Pin
1
2
3
4
5
6
7
8
Symbol
GND
VS
OUT2
IN1
OUT1
IN2
VRef
Input
Function
Reference point, ground
Supply voltage
Output 2
Input 1
Output 1
Input 2
Reference voltage
Input switch
95 10634
Absolute Maximum Ratings
Parameters
Supply voltage
Current consumption
t = 2 ms, measured at Pin 1 (GND)
Output current
Input voltage
reference point Pin 7
Power dissipation
DIP 8
Tamb = 95 °C
SO 8
Tamb = 60 °C
DIP 8
SO 8
Ambient temperature range
Storage temperature range
Junction temperature
Pin 2, 7
Pin 1
Pin 3, 5
Pin 4, 6
Symbol
VS
Value
16.5
Unit
V
I1
I3,5
1.5
20
A
mA
–V4,6
6
V
Ptot
mW
Tamb
Tstg
Tj
420
360
690
560
–40 to +95
–55 to +125
150
Symbol
RthJA
RthJA
Value
110
160
Unit
K/W
K/W
Ptot
mW
°C
°C
°C
Thermal Resistance
Parameters
Junction ambient
2 (5)
DIP8
SO8
TELEFUNKEN Semiconductors
Rev. A2, 06-Mar-97
U4793B
Electrical Characteristics
VS = 9 to 15 V, Tamb = –40 to +95 °C, figure 1, unless otherwise specified
Parameters
Supply voltage
Internal Z-diode Z2
Current consumption
Test Conditions / Pin
Pin 2,7
Pin 2
VS = 12 V
Pin 1
measured at Pin 1 (GND)
VS = 9 V, I3,5 = 10 mA
Pin 3,5
Tamb = 25 °C
Pin 3,5
I3,5 = 1 mA, figure 3 Pin 4,6
Tamb = 25°C
Output saturation voltage
Output Z-diodes Z3, Z5
Control signal threshold
Temperature coefficient of
control signal threshold
Threshold voltage
Input currents
Switch identification Pin 8
Pin 4,6
Delay time
Symbol
VS
VZ
I1
Min
9
20
Vsat
VZ
21
–VT
43
Max
15
4.5
6
44.5
Unit
V
V
mA
0.5
V
V
46
mV
15
0.6 VS
100
mV/K
5
mA
td(on)
6
ms
td(off)
30
ms
TC
V8
II
Pin 8
Pin 3,5
Switch-on
High to low
Switch-off
Low to high
Typ
V4,6
(V)
12.00
48
11.90
46
V
nA
V0
(V)
td(off)
td(on)
– VT (mV)
47
Tamb = 95 °C
45
25 °C
44
–40 °C
43
12
42
6
41
0
10
20
30
t
40
50
60
40
(ms)
95 10615
6
13308
Figure 2. Timing diagram
TELEFUNKEN Semiconductors
Rev. A2, 06-Mar-97
7
8
9
10 11 12 13 14 15 16
VBatt (V)
Figure 3. Threshold voltage = f (VBatt and temperature)
3 (5)
U4793B
Package Information
Package DIP8
Dimensions in mm
7.77
7.47
9.8
9.5
1.64
1.44
4.8 max
6.4 max
0.5 min
0.58
0.48
3.3
0.36 max
9.8
8.2
2.54
7.62
8
5
technical drawings
according to DIN
specifications
13021
1
4
Package SO8
Dimensions in mm
5.2
4.8
5.00
4.85
3.7
1.4
0.25
0.10
0.4
1.27
6.15
5.85
3.81
8
0.2
3.8
5
technical drawings
according to DIN
specifications
13034
8
4 (5)
5
TELEFUNKEN Semiconductors
Rev. A2, 06-Mar-97
U4793B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
TELEFUNKEN Semiconductors
Rev. A2, 06-Mar-97
5 (5)