INFINEON SRD00514X

Ge-Avalanche Photodiode with Pigtail
SRD 00514X
SRD 00515X
• Designed for application in fiber-optic communication
systems
• Sensitive receiver for the 2nd optical window (1300 nm)
• High gain-bandwidth product
• Suitable for bit rates up to 1.2 Gbit/s and long-haul
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transmission
Planar structure
Small radiant sensitive area
Low multiplied dark current
High spectral sensitivity by built-in optics
Hermetically sealed 3-pin metal case
With optimally coupled multimode-fiber pigtail
Type
Ordering Code
Connector/Flange
SRD 00514H
Q62702-Pxxxx
Pigtail, FC/PC-connector
SRD 00515H
Q62702-Pxxxx
Pigtail with flange,
FC/PC-connector
Component with other connector types on request.
Maximum Ratings
Parameter
Symbol
Values
Unit
Forward current
IF
50
mA
Reverse voltage
VR
*
V
Operating and storage temperature
TA Tstg
− 40 … + 85
°C
Max. radiant power into the opt. port
(VR = 5 V)
Φport
1
mW
Soldering time (wave / dip soldering), distance
between solder point and baseplate
(≥ 2 mm, 260 °C)
ts
10
s
* Individual value of VBR is delivered with each component.
Semiconductor Group
1
02.95
SRD 00514X
SRD 00515X
Characteristics
All optical data refer to an optimally coupled 10/125 µm SM fiber at ambient temperature of
25 °C, unless otherwise defined.
Parameter
Symbol
Values
Unit
Spectral sensitivity
λ = 1310 nm, M = 1
Sλ
0.8 (≥ 0.7)
A/W
Rise and fall time (10 % - 90 %)
RL = 50 Ω, M = 1, λ = 1310 nm, Φport = 100 µW
tr; tf
0.3 (≤ 0.5)
ns
Multiplication factor at VR = 0.9 VBR
M
Breakdown voltage
IR = 100 µA
VBR
Total capacitance
VR = 0.9 VBR, Φport = 0, f = 1 MHz
4 (≥ 3)
28 … 40
V
C
≤2
pF
Dark current
VR = 10 V
VR = 0.9 VBR
ID
< 200
< 300
nA
nA
Multiplied dark current (M = 10)
IDM
≤ 20
nA
Dark Current ID = ID(VR / VBR)
Multiplication Factor M = M(VR / VBR)
Rel. Spectral Sensitivity
M = 1 (VR = 10 V)
1
100
0.8
M
ID
ID in uA / M
Rel. Sensitivity
10
0.6
0.4
1
0.2
0
800
0.1
1000
1200
1400
1600
0
Wavelength in nm
Semiconductor Group
0.2
0.4
0.6
VR/VBR
2
0.8
1
SRD 00514X
SRD 00515X
Frequency Response of Sensitivity
Temperatur Behaviour of Breakdown
Voltage
VBR / VBR(25 °C)(TA)
S = S(f), λ = 1300 nm
0
1.1
-1
M=2
-2
M=8
1.05
M=16
-4
VBR/VBR(25)
Sensitivity in dB
-3
-5
-6
1
-7
0.95
-8
-9
M=32
0.9
-10
100
-50
10000
0
25
50
75
100
Ambient Temperature in °C
Frequency in MHz
Temperature Behaviour of Dark Current
ID / ID(25 °C)(TA)
Sensitivity at different input Powers
VBR / VBR(25 °C)(TA)
200
1
180
0.9
160
0.8
140
0.7
Sensitivity in A/W
ID/ID(25)
-25
120
100
80
0.6
0.5
0.4
0.3
60
0.2
40
0.1
20
0
1.00E-07
0
-50
-25
0
25
50
75
Ambient Temperature in °C
Semiconductor Group
1.00E-05
100
Popt in W
3
1.00E-03
SRD 00514X
SRD 00515X
Package Outlines (Dimensions in mm)
SRD 00514X
SRD 00515X
Semiconductor Group
4