Ge-Avalanche Photodiode with Pigtail SRD 00514X SRD 00515X • Designed for application in fiber-optic communication systems • Sensitive receiver for the 2nd optical window (1300 nm) • High gain-bandwidth product • Suitable for bit rates up to 1.2 Gbit/s and long-haul • • • • • • transmission Planar structure Small radiant sensitive area Low multiplied dark current High spectral sensitivity by built-in optics Hermetically sealed 3-pin metal case With optimally coupled multimode-fiber pigtail Type Ordering Code Connector/Flange SRD 00514H Q62702-Pxxxx Pigtail, FC/PC-connector SRD 00515H Q62702-Pxxxx Pigtail with flange, FC/PC-connector Component with other connector types on request. Maximum Ratings Parameter Symbol Values Unit Forward current IF 50 mA Reverse voltage VR * V Operating and storage temperature TA Tstg − 40 … + 85 °C Max. radiant power into the opt. port (VR = 5 V) Φport 1 mW Soldering time (wave / dip soldering), distance between solder point and baseplate (≥ 2 mm, 260 °C) ts 10 s * Individual value of VBR is delivered with each component. Semiconductor Group 1 02.95 SRD 00514X SRD 00515X Characteristics All optical data refer to an optimally coupled 10/125 µm SM fiber at ambient temperature of 25 °C, unless otherwise defined. Parameter Symbol Values Unit Spectral sensitivity λ = 1310 nm, M = 1 Sλ 0.8 (≥ 0.7) A/W Rise and fall time (10 % - 90 %) RL = 50 Ω, M = 1, λ = 1310 nm, Φport = 100 µW tr; tf 0.3 (≤ 0.5) ns Multiplication factor at VR = 0.9 VBR M Breakdown voltage IR = 100 µA VBR Total capacitance VR = 0.9 VBR, Φport = 0, f = 1 MHz 4 (≥ 3) 28 … 40 V C ≤2 pF Dark current VR = 10 V VR = 0.9 VBR ID < 200 < 300 nA nA Multiplied dark current (M = 10) IDM ≤ 20 nA Dark Current ID = ID(VR / VBR) Multiplication Factor M = M(VR / VBR) Rel. Spectral Sensitivity M = 1 (VR = 10 V) 1 100 0.8 M ID ID in uA / M Rel. Sensitivity 10 0.6 0.4 1 0.2 0 800 0.1 1000 1200 1400 1600 0 Wavelength in nm Semiconductor Group 0.2 0.4 0.6 VR/VBR 2 0.8 1 SRD 00514X SRD 00515X Frequency Response of Sensitivity Temperatur Behaviour of Breakdown Voltage VBR / VBR(25 °C)(TA) S = S(f), λ = 1300 nm 0 1.1 -1 M=2 -2 M=8 1.05 M=16 -4 VBR/VBR(25) Sensitivity in dB -3 -5 -6 1 -7 0.95 -8 -9 M=32 0.9 -10 100 -50 10000 0 25 50 75 100 Ambient Temperature in °C Frequency in MHz Temperature Behaviour of Dark Current ID / ID(25 °C)(TA) Sensitivity at different input Powers VBR / VBR(25 °C)(TA) 200 1 180 0.9 160 0.8 140 0.7 Sensitivity in A/W ID/ID(25) -25 120 100 80 0.6 0.5 0.4 0.3 60 0.2 40 0.1 20 0 1.00E-07 0 -50 -25 0 25 50 75 Ambient Temperature in °C Semiconductor Group 1.00E-05 100 Popt in W 3 1.00E-03 SRD 00514X SRD 00515X Package Outlines (Dimensions in mm) SRD 00514X SRD 00515X Semiconductor Group 4