BIDI Transceiver Optical Module 1300 nm Emitting-/1550 nm Receiving Function, Medium Power SBM 51414X • • • • • • Designed for application in passive-optical networks Integrated Wavelength Division Multiplexer Bidirectional Transmission in 2nd and 3rd optical window Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary Photodiode at rear mirror for monitoring and control of radiant power • Low noise/high bandwidth PIN diode • With singlemode fiber pigtail Type Ordering Code Connector SBM 51414A Q62702-P3049 DIN SBM 51414G Q62702-Pxxxx FC / PC Component with other connector types on request. Maximum Ratings Output power ratings refer to the optical port. The operating temperature of the submount is identical to the case temperature. Parameter Symbol Values Unit Module Operating temperature range at case TC − 40 … + 85 °C Storage temperature range Tstg − 40 … + 85 °C Soldering temperature tmax = 30 s, 2 mm distance from bottom edge of case TS 260 °C Forward current IF max 150 mA Radiant power CW Φe 2 mW Reverse voltage VR max 2 V Laser Diode Semiconductor Group 1 02.95 SBM 51414X Maximum Ratings (cont’d) Parameter Symbol Values Unit Monitor Diode Forward current IF max 2 mA Reverse voltage VR max 10 V Forward current IF max 2 mA Reverse voltage VBR 10 V Maximum optical power into the optical port Φport max 1.5 mW Symbol Values Unit > 1.2 mW 1270 … 1350 nm PIN Photodiode Characteristics All optical data refer to the optical port, TC = 25 °C. Parameter Laser Diode Optical output power Φe Emission wavelength center of range Φe = 0.5 mW λ Spectral bandwidth Φe = 0.5 mW (RMS) ∆λ 5 nm Threshold current (− 40 … + 85 °C) Ith 2 … 45 mA Forward voltage Φe = 0.5 mW VF < 1.5 V Radiant power at Ith Φeth < 50 µW Current above threshold at 25 °C, Φe = 1 mW ∆ IF 10 … 35 mA Current above threshold, Φe = 1 mW ∆ IF 7 … 50 mA Variation of 1st derivative of P/I (0.1 … 1mW) dP/dI Differential series resistance Rise and fall time (10 % - 90 %) Semiconductor Group 2 − 30…30 % rS <8 Ω tr, tf <1 ns SBM 51414X Characteristics (cont’d) Parameter Symbol Values Unit Laser Diode (cont’d) TCλ < 0.5 nm / K Dark current, VR = 2 V, Φe = 0, TC = 85 °C IR 200 nA Photocurrent, VR = 2 V, Φe = 0.5 mW IP 200 … 1200 µA Capacitance, VR = 2 V, f = 1 MHz C2 < 10 pF Tracking error, VR = 2 V (see note 1) TE −1…1 dB Dark current, VR = 2 V, Φe = 0, TC = 85 °C IR < 50 nA Spectral sensitivity, VR = 2 V, λ = 1550 nm Sλ > 0.65 A/W Capacitance, VR = 2 V, f = 1 MHz C2 < 1.5 pF Rise and fall time, VR = 2 V, 10 % - 90 % tr, tf <1 ns CRT < − 47 dB Temperature coefficient of wavelength Monitor Diode Detector Module Optical crosstalk (see note 2) Note 1: The tracking error TE is the variation rate of Φe at constant current Imon over a specified temperature range and relative to the reference point: Imon,ref = Imon (T = 25 °C, Φe = 0.5 mW). Thus, TE is given by: TE[dB] = 10 × log Note 2: Φe [TC ] − Φe [25 °C] Φe [25 ° C] Optical Crosstalk is defined as CRT = 10 × log (IDet,0/IDet,1) with: IDet,0 the photocurrent with Φe = 0.5 mW CW laser operation, VR = 2 V, with minimum optical return loss from fiber end and IDet,1 the photocurrent without Φe, but 0.5 mW optical input power, λ = 1550 nm. Semiconductor Group 3 SBM 51414X Accompanying Information T = 25 °C: Threshold current, current above threshold for 1 mW output power, monitor current for 0.5 mW output power, peak wavelength. T = 85 °C: Threshold current, current above threshold for 1 mW output power, monitor current for 0.5 mW output power. End of Life Values Parameter Symbol Values Unit Threshold current at T = 85 °C Ith < 60 mA Current above threshold, over full temperature range, at Imon,ref = Imon (T = 25 °C, Φe = 1 mW, BOL) ∆ IF 7 … 70 mA Tracking error (see note 1) TE − 1.5 … 1.5 dB Detector dark current, VR = 2 V, T = 85 °C IR < 400 nA Monitor dark current, VR = 2 V, T = 85 °C IR <1 µA Fiber Pigtail Type: single mode, silica Parameter Values Unit 9±1 µm 125 ± 2 µm Mode field/cladding concentricity error <1 µm Cladding non-circularity <2 % Mode field non-circularity <6 % > 1270 nm Jacket diameter 0.9 ± 0.1 mm Bending radius > 30 mm Tensile strength fiber/case >5 N 1 ± 0.2 m Mode field diameter Cladding diameter Cut-off wavelength Length Semiconductor Group 4 SBM 51414X Laser Diode Radiant Power in Singlemode Fiber Relative Radiant Power Φe = f(λ) 1.2 100 90 Relative Optical Power Optical Power in mW 1 0.8 0.6 0.4 0.2 80 70 60 50 40 30 20 10 0 0 0 10 20 1306 1308 1310 1312 1314 30 Wavelength in nm Forward Current in mA Monitor Diode Dark Current IR = f(TA) Φport = 0, VR = 5 V Laser Forward Current IF = f(VF) 100 1000 80 100 Dark Current in nA Forward Current in mA 90 70 60 50 40 30 20 10 1 0.1 10 0 0.01 0 0.4 0.8 1.2 1.6 -50 Forward Voltage in V Semiconductor Group 0 50 Temperature in °C 5 100 SBM 51414X Capacitance of PIN Diode C = f(VR) Φport = 0, f = 1 MHz Rel. Spectral Sensitivity of PIN Diode VR = 5 V 10 1 0.9 Sensitivity in A/W Capacitance in pF 0.8 1 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1200 0.1 0.1 1 10 100 1400 1600 1800 2000 Wavelength in nm Reverse Bias in V Dark Current of PIN Diode IR = f(VR) IF = f(VF) Dark Current of PIN Diode IR = f(TA) Φport = 0, VR = 5 V 10 100 Dark Current in nA Dark Current in nA 10 1 0.1 0.01 1 0.1 0.01 0.001 0.001 0 5 10 15 20 -50 Reverse Bias in V Semiconductor Group 0 50 100 Ambient Temperature in °C 6 SBM 51414X Package Outlines (Dimensions in mm) SBM 51414X Semiconductor Group 7