FUJI ESAC87M-009

ESAC87M-009 (16A)
(90V / 16A )
Outline drawings, mm
15.5 ±0.3
+0.2
1.1 —0.1
Features
5.45 ±0.2
0.6 +0.2
3.5 ±0.2
1. Gate
2. Drain
3. Source
JEDEC
Insulated package by fully molding
Low VF
3.2 +0.3
±0.3
1.6 ±0.3
5.45 ±0.2
±0.3
20 Min
2.3 ±0.2
2.1±0.3
5.5
21.5
5.5 ±0.2
ø3.2 ±0.2
9.3 ±0.3
SCHOTTKY BARRIER DIODE
EIAJ
Super high speed switching
Connection diagram
High reliability by planer design
Applications
High speed power switching
2
1
3
Maximum ratings and characteristics
Absolute maximum ratings
Item
Symbol
Conditions
Rating
Unit
90
V
100
V
1500
V
Repetitive peak reverse voltage
VRRM
Non-repetitive peak reverse voltage
VRSM
tw=500ns, duty=1/40
Isolating voltage
V iso
Terminals-to-case,
AC. 1min.
Average output current
Io
Surge current
IFSM
Square wave, duty=1/2
Tc=90°C
Sine wave
10ms
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
-40 to +150
°C
16*
A
100
A
* Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VFM
IFM=6A
Reverse current
IRRM
VR=VRRM
Thermal resistance
Rth(j-c)
Junction to case
Max.
Unit
0.9
V
10
2.0
mA
°C/W
ESAC87M-009 (16A)
(90V / 16A )
Characteristics
Reverse characteristics
Forward characteristics
30
50
30
10
5
3
10
IF
[A]
IR
5
3
[mA]
1
0.5
0.3
1
0.1
0.5
0.05
0.03
0.3
0.1
0.01
0
0.2 0.4
0.6 0.8 1.0
1.2
1.4
1.6
0
20
40
VF [V]
10
100
120
140
4.0
8
[W ]
80
Reverse power dissipation
Forward power dissipation
WF
60
VR [V]
3.0
WR
6
[W ]
2.0
4
1.0
2
0
0
2
4
6
8
0
10
0
20
40
Io [A]
60
80
100
VR [V]
Junction capacitance characteristics
Output current-case temperature
150
1000
500
100
300
Tc
Cj
[°C ]
[pF]
100
50
50
30
0
0
4
8
12
16
Io [ A ]
20
24
28
3
5
10
VR [V]
30
50
100
ESAC87M-009 (16A)
(90V / 16A )
Surge capability
300
100
IFSM
[A] 50
30
10
1
3
5
10
30
[time] (at 50Hz)
Transient thermal impedance
101
[°C/W]
100
10-1
10-3
10-2
10-1
t [sec.]
100
101
102