PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Rev. 01 — 16 May 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP47NQ10T in SOT78 (TO-220AB) PHB47NQ10T in SOT404 (D2-PAK). 2. Features ■ Fast switching ■ Very low on-state resistance. 3. Applications ■ DC to DC converters ■ Switched mode power supplies. c 4. Pinning information c Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base; connected to drain (d) Simplified outline Symbol mb mb [1] d g 2 1 3 MBK116 MBK106 1 2 3 SOT78 (TO-220AB) SOT404 (D2-PAK) [1] It is not possible to make connection to pin 2 of the SOT404 package. 1. TrenchMOS is a trademark of Royal Philips Electronics. MBB076 s Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25 to 175 °C − 100 V ID drain current (DC) Tmb = 25 °C; VGS = 10 V − 47 A Ptot total power dissipation Tmb = 25 °C − 166 W Tj junction temperature − 175 °C RDSon drain-source on-state resistance 20 28 mΩ Min Max Unit Tj = 25 °C; VGS = 10 V; ID = 25 A 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage (DC) Tj = 25 to 175 °C − 100 V VDGR drain-gate voltage (DC) Tj = 25 to 175 °C; RGS = 20 kΩ − 100 V VGS gate-source voltage (DC) − ±20 V ID drain current (DC) Tmb = 25 °C; VGS = 10 V Figure 2 and 3 − 47 A Tmb = 100 °C; VGS = 10 V Figure 2 − 33 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 187 A Tmb = 25 °C; Figure 1 Ptot total power dissipation − 166 W Tstg storage temperature −55 175 °C Tj operating junction temperature −55 175 °C Source-drain diode IS source (diode forward) current (DC) Tmb = 25 °C − 47 A ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs − 187 A unclamped inductive load; IAS = 30 A; tp = 0.1 ms; VDD ≤ 25 V; RGS = 50 Ω; VGS = 5 V; starting Tj = 25 °C; Figure 4 − 45 mJ Avalanche ruggedness EAS non-repetitive avalanche energy © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08243 Product data Rev. 01 — 16 May 2001 2 of 14 PHP47NQ10T; PHB47NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 03aa24 03aa16 120 Pder (%) 100 120 Ider (%) 100 80 80 60 60 40 40 20 20 0 0 0 50 100 150 0 200 o Tmb ( C) 50 100 150 200 o Tmb ( C) VGS ≥ 10 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 003aaa097 103 003aaa098 102 ID (A) IAS RDSon = VDS / ID (A) tp = 1 µs 102 25 oC 10 µs 10 100 µs 10 1 ms D.C. o Tj prior to avalanche = 150 C 10 ms 100ms 1 1 1 10 102 3 VDS (V) 10 10-3 Tmb = 25 °C; IDM is single pulse. 10-1 1 tp (ms) 10 Unclamped inductive load; VDD ≤ 25 V; RGS = 50 Ω; VGS = 5 V; starting Tj = 25 °C and 150 °C. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08243 Product data 10-2 Rev. 01 — 16 May 2001 3 of 14 PHP47NQ10T; PHB47NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Value Unit Rth(j-mb) thermal resistance from junction to mounting Figure 5 base 0.9 K/W Rth(j-a) thermal resistance from junction to ambient SOT78 package; vertical in still air. 60 K/W Rth(j-a) thermal resistance from junction to ambient SOT404 package; mounted on printed circuit board; minimum footprint. 50 K/W 7.1 Transient thermal impedance 003aaa099 1 δ= Zth (j-mb) 0.5 (K/W) 0.2 10-1 0.1 0.05 0.02 10-2 δ= P Single pulse tp T t tp T 10-3 10-7 10-6 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08243 Product data Rev. 01 — 16 May 2001 4 of 14 PHP47NQ10T; PHB47NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V 100 − − V Tj = 25 °C 2 3 4 V Tj = 175 °C 1 − − V Tj = 25 °C − 0.05 10 µA Tj = 175 °C − − 500 µA − 2 100 nA Tj = 25 oC − 20 28 mΩ Tj = 175 °C − − 76 mΩ − 66 − nC − 12 − nC − 21 − nC − 2320 3100 pF − 315 378 pF − 187 256 pF Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 10 IDSS drain-source leakage current VGS = 0 V; VDS = 100 V IGSS gate-source leakage current VDS = 0 V; VGS = ±20 V RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Figure 8 and 9 Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) tf ID = 40 A; VDD = 80 V; VGS = 10 V; Figure 15 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 13 − 15 23 ns − 70 105 ns turn-off delay time − 83 116 ns fall time − 45 63 ns VDD = 30 V; RD = 1.2 Ω; VGS = 10 V; RG = 10 Ω Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 14 − 0.85 1.2 V trr reverse recovery time − 66 − ns Qr recovered charge IS = 47 A; dIS/dt = −100 A/µs; VGS = -10 V; VR = 30 V − 0.24 − µC © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08243 Product data Rev. 01 — 16 May 2001 5 of 14 PHP47NQ10T; PHB47NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 003aaa100 180 003aaa101 100 VGS = 10 V ID 160 (A) 140 20 V 8.0 V ID (A) 80 7.5 V 120 7.0 V 100 6.5 V 60 80 6.0 V 40 o 60 5.5 V 40 5.0 V 20 Tj = 175 oC 20 25 oC 4.5 V 0 0 2 4 6 0 8 10 VDS (V) 0 Tj = 25 °C 4 6 VGS (V) 8 Tj = 25 °C and 175 °C; VDS > ID × RDSon Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 003aaa103 003aaa102 65 2.0 6.5 V 6.0 V VGS = 5.5 V RDSon 60 a 1.8 (mΩ) 55 1.6 50 1.4 1.2 45 7.0 V 40 1.0 7.5 V 35 0.8 8.0 V 30 0.6 10 V 25 0.4 20 0.2 0 -60 15 5 25 45 65 85 105 125 ID (A) Tj = 25 °C -20 20 60 100 140 180 Tj (oC) R DSon a = --------------------------R DSon ( 25 °C ) Fig 8. Drain-source on-state resistance as a function of drain current; typical values. Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08243 Product data 2 Rev. 01 — 16 May 2001 6 of 14 PHP47NQ10T; PHB47NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor VGS(th) (V) 003aaa078 10-1 003aaa023 4.5 ID (A) 4 10-2 max 3.5 2% 10-3 3 typ 98% typ 2.5 10-4 2 min 1.5 10-5 1 0.5 10-6 0 -60 -20 20 60 100 140 Tj (oC) 0 1 2 3 4 180 5 VGS (V) Tj = 25 °C ID = 1 mA; VDS = VGS Fig 10. Gate-source threshold voltage as a function of junction temperature. 003aaa104 45 Fig 11. Sub-threshold drain current as a function of gate-source voltage. 003aaa105 5 Ciss, Coss, gfs (S) 40 Ciss Crss 4 (nF) 35 30 3 Coss 25 20 2 Crss 15 1 10 5 0 10-2 0 0 20 40 60 80 100 10-1 Tj = 25 °C; VDS = 25 V 10 102 VGS = 0 V; f = 1 MHz Fig 12. Forward transconductance as a function of drain current; typical values. Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08243 Product data 1 VDS (V) ID (A) Rev. 01 — 16 May 2001 7 of 14 PHP47NQ10T; PHB47NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 003aaa106 100 (A) 003aaa107 10 IS VGS (V) 80 8 VDD = 20 V 60 Tj = 175 oC 6 VDD = 80 V 25 oC 40 4 20 2 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 10 20 30 VSD (V) 50 60 70 QG (nC) Tj = 25 °C and 175 °C; VGS = 0 V ID = 40 A; VDD = 20 V and 80 V Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 15. Gate-source voltage as a function of gate charge; typical values. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08243 Product data 40 Rev. 01 — 16 May 2001 8 of 14 PHP47NQ10T; PHB47NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 p q mounting base D1 D L2 L1(1) Q b1 L 1 2 3 b c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 c D D1 E e L L1(1) L2 max. p q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION REFERENCES IEC SOT78 JEDEC EIAJ 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 00-09-07 01-02-16 Fig 16. SOT78 (TO-220AB) © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08243 Product data Rev. 01 — 16 May 2001 9 of 14 PHP47NQ10T; PHB47NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-06-25 01-02-12 SOT404 Fig 17. SOT404 (D2-PAK). © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08243 Product data Rev. 01 — 16 May 2001 10 of 14 Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor 10. Revision history Table 6: Revision history Rev Date 01 20010516 CPCN Description - Product data. Initial version. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 08243 Product data Rev. 01 — 16 May 2001 11 of 14 PHP47NQ10T; PHB47NQ10T Philips Semiconductors N-channel enhancement mode field-effect transistor 11. Data sheet status Data sheet status [1] Product status [2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions 13. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. © Philips Electronics N.V. 2001 All rights reserved. 9397 750 08243 Product data Rev. 01 — 16 May 2001 12 of 14 Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax. +852 2 319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Tel. +45 3 288 2636, Fax. +45 3 157 0044 Finland: Tel. +358 961 5800, Fax. +358 96 158 0920 France: Tel. +33 1 4728 6600, Fax. +33 1 4728 6638 Germany: Tel. +49 40 23 5360, Fax. +49 402 353 6300 Hungary: Tel. +36 1 382 1700, Fax. +36 1 382 1800 India: Tel. +91 22 493 8541, Fax. +91 22 493 8722 Indonesia: see Singapore Ireland: Tel. +353 17 64 0000, Fax. +353 17 64 0200 Israel: Tel. +972 36 45 0444, Fax. +972 36 49 1007 Italy: Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Tel. +81 33 740 5130, Fax. +81 3 3740 5057 Korea: Tel. +82 27 09 1412, Fax. +82 27 09 1415 Malaysia: Tel. +60 37 50 5214, Fax. +60 37 57 4880 Mexico: Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. +64 98 49 4160, Fax. +64 98 49 7811 Norway: Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Tel. +63 28 16 6380, Fax. +63 28 17 3474 Poland: Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Tel. +34 33 01 6312, Fax. +34 33 01 4107 Sweden: Tel. +46 86 32 2000, Fax. +46 86 32 2745 Switzerland: Tel. +41 14 88 2686, Fax. +41 14 81 7730 Taiwan: Tel. +886 22 134 2451, Fax. +886 22 134 2874 Thailand: Tel. +66 23 61 7910, Fax. +66 23 98 3447 Turkey: Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE, P.O. 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All rights reserved. 9397 750 08243 Product data Rev. 01 — 16 May 2001 13 of 14 Philips Semiconductors PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 © Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 16 May 2001 Document order number: 9397 750 08243