PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 03 — 25 June 2003 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package. Product availability: PH3230 in SOT669 (LFPAK). 2. Features ■ ■ ■ ■ Logic level compatible Low drive current High density mounting Very low on-state resistance. 3. Applications ■ DC-to-DC converters ■ Computer motherboards ■ Switched mode power supplies. 4. Pinning information Table 1: Pinning - SOT669 (LFPAK), simplified outline and symbol Pin Description 1,2,3 source (s) 4 gate (g) mb mounting base, connected to drain (d) Simplified outline Symbol mb d g 1 2 Top view 3 4 MBL286 SOT669 (LFPAK) MBL288 s1 s2 s3 PH3230 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25 °C - 30 V ID drain current (DC) Tmb = 25 °C - 50 A Ptot total power dissipation Tmb = 25 °C - 42 W Tj junction temperature - 150 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C 3.2 3.7 mΩ VGS = 4.5 V; ID = 25 A; Tj = 25 °C 5.5 7.3 mΩ Min Max Unit 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VGS gate-source voltage (DC) ID drain current (DC) IDM Conditions 25 °C ≤ Tj ≤ 150 °C - 30 V - ±20 V VGS = 10 V; Tmb = 25 °C; Figure 2 and 4 - 50 A peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 4 - 200 A Tmb = 25 °C; Figure 1 Ptot total power dissipation - 42 W Tstg storage temperature −55 +150 °C Tj junction temperature −55 +150 °C - 50 A Tj = 25 °C - 5 A Tj = 25 °C; RGS ≥ 50 Ω; IDS(AL)R = 5 A; VDD = 15 V; duty cycle < 0.1%; Figure 3 and 16 - 2.5 mJ Source-drain diode ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs Avalanche ruggedness IDS(AL)R repetitive drain-source avalanche current EDS(AL)R repetitive drain-source avalanche energy © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10949 Product data Rev. 03 — 25 June 2003 2 of 13 PH3230 Philips Semiconductors N-channel enhancement mode field-effect transistor 03ah31 120 03ag77 120 (%) Ider (%) 80 80 40 40 Pder 0 0 0 50 100 150 200 Tmb (°C) 0 50 100 150 200 Tmb (°C) VGS ≥ 10 V P tot P der = ---------------------- × 100% P ° ID I der = ------------------- × 100% I ° tot ( 25 C ) D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 03aj93 4 EDS(AL)R (mJ) 3 2 1 0 0 50 100 Tj (°C) 150 IAR = 5 A; VDD = 15 V; duty cycle < 0.1%; RG ≥ 50 Ω Fig 3. Repetitive drain-source avalanche energy as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10949 Product data Rev. 03 — 25 June 2003 3 of 13 PH3230 Philips Semiconductors N-channel enhancement mode field-effect transistor 03ag78 103 ID (A) Limit RDSon = VDS / ID tp = 10 µs 102 100 µs 1 ms 10 DC 10 ms 100 ms 1 10-1 1 10 VDS (V) 102 Tmb = 25 °C; IDM is single pulse. Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10949 Product data Rev. 03 — 25 June 2003 4 of 13 PH3230 Philips Semiconductors N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Rth(j-mb) Conditions Min Typ Max Unit thermal resistance from junction to mounting base Figure 5 - - 3 K/W 7.1 Transient thermal impedance 03ag76 10 Zth(j-mb) (K/W) 1 δ = 0.5 0.2 0.1 10-1 0.05 δ= P tp T 0.02 tp single pulse 10-2 10-5 10-4 10-3 10-2 10-1 1 t T tp (s) 10 Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10949 Product data Rev. 03 — 25 June 2003 5 of 13 PH3230 Philips Semiconductors N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ID = 10 mA; VGS = 0 V 30 - - V Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 10 1 1.9 2.5 V IDSS drain-source leakage current VDS = 30 V; VGS = 0 V - - 1 µA IGSS gate-source leakage current VGS = ±16 V; VDS = 0 V - 0.1 10 µA RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Figure 8 and 9 - 3.2 3.7 mΩ VGS = 4.5 V; ID = 25 A; Figure 9 - 5.5 7.3 mΩ Dynamic characteristics gfs forward transconductance VDS = 10 V; ID = 25 A; Figure 12 39 55 - S Qg(tot) total gate charge ID = 50 A; VDD = 10 V; VGS = 10 V; Figure 15 - 75 - nC Qgs gate-source charge - 16 - nC Qgd gate-drain (Miller) charge - 14 - nC Ciss input capacitance - 4750 - pF Coss output capacitance - 1160 - pF Crss reverse transfer capacitance td(on) turn-on delay time tr VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 13 - 630 - pF - 25 - ns rise time - 50 - ns td(off) turn-off delay time - 90 - ns tf fall time - 26 - ns - 0.85 0.98 V - 60 - ns VDD = 10 V; ID = 25 A; VGS = 10 V; RG = 4.7 Ω Source-drain (reverse) diode VSD source-drain (diode forward) voltage IS = 50 A; VGS = 0 V; Figure 14 trr reverse recovery time IS = 50 A; dIS/dt = −50 A/µs; VGS = 0 V © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10949 Product data Rev. 03 — 25 June 2003 6 of 13 PH3230 Philips Semiconductors N-channel enhancement mode field-effect transistor 03ag79 100 ID Tj = 25 °C (A) 80 03ag80 80 ID (A) 10 V VDS > ID x RDSon 5V 60 4V 3.5 V 60 40 40 150 °C 20 20 VGS = 3 V Tj = 25 °C 0 0 0 1 2 3 4 5 VDS (V) Tj = 25 °C 0 1 2 3 VGS (V) 4 Tj = 25 °C and 150 °C; VDS > ID × RDSon Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03ah32 03ag85 30 1.8 a RDSon (mΩ) VGS = 2.5 V 3V 20 1.2 3.5 V 10 0.6 5V 10 V 0 0 0 20 40 ID (A) 60 Tj = 25 °C -80 -20 40 100 T (°C) 160 j R DSon a = --------------------------R ° DSon ( 25 C ) Fig 8. Drain-source on-state resistance as a function of drain current; typical values. Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10949 Product data Rev. 03 — 25 June 2003 7 of 13 PH3230 Philips Semiconductors N-channel enhancement mode field-effect transistor 03ah33 3 VGS(th) max (V) 2 03ah30 10-1 ID (A) 10-2 typ 10-3 10-4 min. typ. max. min 1 10-5 10-6 0 -80 -20 40 100 160 0 1 2 Tj (°C) 3 Tj = 25 °C ID = 1 mA; VDS = VGS Fig 10. Gate-source threshold voltage as a function of junction temperature 03ag81 80 gfs (S) VGS (V) Fig 11. Sub-threshold drain current as a function of gate-source voltage. 03ag83 104 VDS > ID x RDSon 60 Tj = 25 °C C (pF) 40 150 °C 103 Ciss Coss Crss 20 0 0 20 40 60 ID (A) 80 Tj = 25 °C and 150 °C; VDS > ID × RDSon 102 10-1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 12. Forward transconductance as a function of drain current; typical values. Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10949 Product data 1 Rev. 03 — 25 June 2003 8 of 13 PH3230 Philips Semiconductors N-channel enhancement mode field-effect transistor 03ag82 10 VGS (V) 100 IS (A) 80 VGS = 0 V 8 03ag84 ID = 50 A VDD = 10 V Tj = 25 °C 6 60 150 °C 4 40 Tj = 25 °C 2 20 0 0 0 0.4 0.8 1.2 1.6 0 20 40 60 QG (nC) 80 VSD (V) Tj = 25 °C and 150 °C; VGS = 0 V Tj = 25 °C; ID = 50 A; VDD = 10 V Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 15. Gate-source voltage as a function of gate charge; typical values. 9. Test information L VDD VDS VGS −ID /100 RG 0 50 Ω T.U.T. R01 shunt 03am60 V ( BR )DSS E DS ( AL )R = 0.5 × ( LI DS ( AL )R ) 2 × ---------------------------------------V ( BR )DSS – V DD Fig 16. Avalanche energy test circuit. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10949 Product data Rev. 03 — 25 June 2003 9 of 13 PH3230 Philips Semiconductors N-channel enhancement mode field-effect transistor 10. Package outline Plastic single-ended surface mounted package (Philips version LFPAK); 4 leads A2 A E SOT669 C c2 b2 L1 E1 mounting base D1 D H L2 1 2 3 4 X e w M A b c 1/2 e A (A 3) A1 C θ L detail X 0 2.5 y C 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 c c2 D(1) D1(1) max E(1) E1(1) e H L L1 L2 w y θ mm 1.20 1.01 0.15 0.00 1.10 0.95 0.25 0.50 0.35 4.41 3.62 0.25 0.19 0.30 0.24 4.10 3.80 4.20 5.0 4.8 3.3 3.1 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-07-10 03-02-05 MO-235 Fig 17. SOT669 (LFPAK). © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10949 Product data Rev. 03 — 25 June 2003 10 of 13 PH3230 Philips Semiconductors N-channel enhancement mode field-effect transistor 11. Revision history Table 6: Revision history Rev Date 03 20030625 CPCN Description - Product Data (9397 750 10949) Modifications: • JEDEC reference added to package outline drawing in Figure 17 02 20020905 - Product data (9397 750 10122) 01 20020207 - Product data (9397 750 09395) © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10949 Product data Rev. 03 — 25 June 2003 11 of 13 PH3230 Philips Semiconductors N-channel enhancement mode field-effect transistor 12. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions 14. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10949 Rev. 03 — 25 June 2003 12 of 13 Philips Semiconductors PH3230 N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Transient thermal impedance . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 25 June 2003 Document order number: 9397 750 10949