CMOS Static RAM 16K (4K x 4-Bit) IDT6168SA IDT6168LA Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) Low power consumption Battery backup operation—2V data retention voltage (IDT6168LA only) Available in high-density 20-pin ceramic or plastic DIP and 20-pin leadless chip carrier (LCC) Produced with advanced CMOS high-performance technology CMOS process virtually eliminates alpha particle soft-error rates Bidirectional data input and output Military product compliant to MIL-STD-883, Class B CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective approach for high-speed memory applications. Access times as fast 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1µW operating off a 2V battery. All inputs and outputs of the IDT6168 are TTL-compatible and operate from a single 5V supply. The IDT6168 is packaged in either a space saving 20-pin, 300-mil ceramic or plastic DIP or a 20-pin LCC providing high board-level packing densities. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability. Description The IDT6168 is a 16,384-bit high-speed static RAM organized as 4K x 4. It is fabricated using lDT’s high-performance, high-reliability Functional Block Diagram A0 VCC GND ADDRESS 16,384-BIT MEMORY ARRAY DECODER A11 I/O0 I/O1 I/O2 I/O CONTROL INPUT DATA CONTROL , I/O3 CS 3090 drw 01 WE FEBRUARY 2001 1 ©2000 Integrated Device Technology, Inc. DSC-3090/05 IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Co mmercial Temperature Ranges Truth Table(1) Pin Configurations Mode X High-Z Standby 19 Read L H DOUT Active 18 A10 Write L L DIN Active 17 A9 A8 NOTE: 1. H = VIH, L = VIL, X = Don't Care I/O3 I/O2 I/O1 Absolute Maximum Ratings(1) 2 A5 A6 A7 CS 6 15 7 14 8 13 9 12 10 11 5 GND 16 Symbol I/O0 WE , DIP/LCC Top View Pin Descriptions Name Description A0 - A11 Address Inputs CS Chip Select WE Write Enable I/O0 - I/O3 Data Input/Output VCC Power GND Ground Rating CI/O I/O Capacitance Unit -0.5 to +7.0 -0.5 to +7.0 V TA Operating Temperature 0 to +70 -55 to +125 o C TBIAS Temperature Under Bias -55 to +125 -65 to +135 o C TSTG Storage Temperature -55 to +125 -65 to +150 o C PT Power Dissipation 1.0 1.0 IOUT DC Output Current 50 50 W mA NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Recommended DC Operating Conditions Capacitance (TA = +25°C, f = 1.0MHz) Input Capacitance Mil. Terminal Voltage with Respect to GND Symbol CIN Com'l. 3090 tbl 04 3090 tbl 01 Parameter(1) 3090 tbl 03 VTERM 3090 drw 02 Symbol Power H 20 4 Output Standby 1 P20-1 D20-1 L20-1 WE VCC A11 A0 A1 A2 A3 A4 3 CS Conditions Max. Unit VIN = 0V 7 pF VOUT = 0V 7 Parameter VCC Supply Voltage GND Ground Min. Typ. Max. Unit 4.5 5.0 5.5 V 0 0 0 V 6.0 V 0.8 V VIH Input High Voltage 2.2 ____ VIL Input Low Voltage -0.5(1) ____ NOTE: 1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle. pF 3090 tbl 05 3090 tbl 02 NOTE: 1. This parameter is determined by device characterization, but is not production tested. Recommended Operating Temperature and Supply Voltage Grade Temperature O O GND Vcc Military -55 C to +125 C 0V 5V ± 10% Industrial -45OC to +85OC 0V 5V ± 10% 0OC to +70OC 0V 5V ± 10% Commercial 3090 tbl 06 2 IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Co mmercial Temperature Ranges DC Electrical Characteristics(1) (VCC = 5.0V ± 10%, VLC = 0.2V, V HC = VCC - 0.2V) 6168SA15 Power Symbol ICC1 ICC2 ISB ISB1 Com'l. Mil. 6168SA20 6168LA20 Com'l. 6168SA25 6168LA25 Mil. Parameter Operating Power Supply Current CS < VIL, Outputs Open V CC = Max., f = 0(2) SA 110 ____ LA ____ Dynamic Operating Current CS < VIL, Outputs Open V CC = Max., f = fMAX(2) SA 6168SA45 6168LA45 Com'l. & Ind. Mil. Com'l. Mil. 90 100 ____ 100 80 Unit 90 ____ ____ 70 ____ 70 80 ____ 145 ____ 120 ____ 110 120 ____ 110 LA ____ ____ 100 ____ 90 100 ____ 80 Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open V CC = Max., f = fMAX(2) SA 55 ____ 45 ____ 35 45 ____ 35 LA ____ ____ 30 ____ 25 30 ____ 25 Full Standby Power Supply Current (CMOS Level) CS > VHC, VCC = Max., V IN < VLC or VIN > VHC, f = 0(2) SA 20 ____ 20 ____ 3 10 ____ 10 LA ____ ____ 0.5 ____ 0.5 0.3 ____ 0.3 mA mA mA mA 3090 tbl 07 NOTES: 1. All values are maximum guaranteed values. 2. fMAX = 1/tRC, only address inputs are cycling at fMAX. f = 0 means no address inputs are changing. DC Electrical Characteristics VCC = 5.0V ± 10% IDT6168SA Symbol |ILI| |ILO| VOL VOH Parameter Input Leakage Current Output Leakage Current Output LOW Voltage Output HIGH Voltage Test Conditions Min. IDT6168LA Max. Min. Max. Unit 10 2 ____ 5 2 µA 10 2 ____ ____ 5 2 µA IOL = 10mA, VCC = Min. ____ 0.5 ____ 0.5 V IOL = 8mA, VCC = Min. ____ 0.4 ____ 0.4 2.4 ____ 2.4 ____ VCC = Max., VIN = GND to VCC MIL. COM'L. ____ VCC = Max., CS = VIH, VOUT = GND to V CC MIL. COM'L. ____ IOH = -4mA, VCC = Min. ____ ____ ____ V 3090 tbl 09 6.42 3 IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Co mmercial Temperature Ranges Data Retention Characteristics VLC = 0.2V, VHC = VCC 0.2V (LA Version Only) IDT6168LA Symbol Parameter V DR V CC for Data Retention ICCDR Data Retention Current Test Condition MIL. Chip Deselect to Data Retention Time tR(5) Operation Recovery Time Typ.(1) Max. Unit 2.0 ____ ____ V ____ 0.5(2) 1.0(3) 100(2) 150(3) µA 0.5(2) 1.0(3) 20(2) 30(3) µA 0 ____ ____ ns tRC(4) ____ ____ ____ CS > VHC VIN > VHC or < VLC tCDR(5) Min. ____ COM'L. ____ ns 3090 tbl 10 NOTES: 1. TA = +25°C. 2. at VCC = 2V 3. at VCC = 3V 4. tRC = Read Cycle Time. 5. This parameter is guaranteed by device characterization, but is not production tested. Low VCC Data Retention Waveform DATA RETENTION MODE VCC 4.5V 4.5V VDR ≥ 2V tCDR CS VIH VDR tR , VIH 3090 drw 03 AC Test Conditions Input Pulse Levels GND to 3.0V Input Rise/Fall Times 5ns Input Timing Reference Levels 1.5V Output Reference Levels 1.5V AC Test Load See Figures 1 and 2 3090 tbl 11 5V 5V 480Ω 480Ω DATA OUT 255Ω DATA OUT 30pF* 255Ω 3090 drw 04 5pF* 3090 drw 05 Figure 1. AC Test Load Figure 2. AC Test Load (for tCHZ, tCLZ, tWHZ and tOW) *Includes scope and jig capacitances 4 IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Co mmercial Temperature Ranges AC Electrical Characteristics (VCC = 5.0V ± 10%, All Temperature Ranges) 6168SA15(1) 6168SA20(1) 6168LA20(1) 6168SA45(2) 6168LA45(2) 6168SA25 6168LA25 Min. Max. Min. Max. Min. Max. Min. Max. Unit Read Cycle Time 15 ____ 20 ____ 25 ____ 45 ____ ns tAA Address Access Time ____ 15 ____ 20 ____ 25 ____ 45 ns tACS Chip Select Access Time ____ 15 ____ 20 ____ 25 ____ 45 ns tCLZ(3) Chip Select to Output in Low-Z 3 ____ 5 ____ 5 ____ 5 ____ ns tCHZ(3) Chip Desele ct to Output in High-Z ____ 8 ____ 10 ____ 10 ____ 25 ns tOH Output Hold from Address Change 3 ____ 3 ____ 3 ____ 3 ____ ns tPU(3) Chip Sele ct to Power Up Time 0 ____ 0 ____ 0 ____ 0 ____ ns tPD(3) Chip Deselect to Power Down Time ____ 35 ____ 20 ____ 25 ____ 40 ns Symbol Parameter Read Cycle tRC 3090 tbl 12 NOTES: 1. 0° to +70°C temperature range only. 2. –55°C to +125°C temperature range only. 3. This parameter is guaranteed with AC Test load (Figure 2) by device characterization, but is not production tested. Timing Waveform of Read Cycle No. 1(1, 2) tRC ADDRESS tAA tOH DATAOUT PREVIOUS DATA VALID DATA VALID 3090 drw 06 , Timing Waveform of Read Cycle No. 2(1, 3) tRC CS tCLZ (4) DATAOUT tACS tCHZ (3) HIGH IMPEDANCE DATAOUT VALID HIGH IMPEDANCE tPU VCC SUPPLY CURRENT tPD ICC , ISB 3090 drw 07 NOTES: 1. WE is HIGH for Read cycle. 2. CS is LOW for Read cycle. 3. Device is continuously selected, CS is LOW. 3. Address valid prior to or coincident with CS transition LOW. 4. Transition is measured ±200mV from steady state. 6.42 5 IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Co mmercial Temperature Ranges AC Electrical Characteristics (VCC = 5.0V ± 10%, All Temperature Ranges) 6168SA15(1) Symbol Parameter 6168SA20(1) 6168LA20(1) 6168SA25 6168LA25 6168SA45(2) 6168LA45(2) Unit Min. Max. Min. Max. Min. Max. Min. Max. 15 ____ 20 ____ 20 ____ 40 ____ ns 20 ____ 20 ____ 40 ____ ns Write Cycle tWC Write Cycle Time tCW Chip Select to End-of-Write 15 ____ tAW Address Valid to End-of-Write 15 ____ 20 ____ 20 ____ 40 ____ ns tAS Address Set-up Time 0 ____ 0 ____ 0 ____ 0 ____ ns 15 ____ 20 ____ 20 ____ 40 ____ ns 0 ____ 0 ____ 0 ____ ns tWP Write Pulse Width tWR Write Recovery Time 0 ____ tDW Data to Valid to End-of-Write 9 ____ 10 ____ 10 ____ 20 ____ ns tDH Data Hold Time 0 ____ 0 ____ 0 ____ 3 ____ ns tWHZ(3) Write Enable to Output in High-Z ____ 6 ____ 7 ____ 7 ____ 20 ns tOW(3) Output Active from End-of-Write 0 ____ 0 ____ 0 ____ 0 ____ ns NOTES: 1. 0° to +70°C temperature range only. 2. –55°C to +125°C temperature range only. 3. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested. 6 3090 tbl 13 IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Co mmercial Temperature Ranges Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,5) t WC ADDRESS t AW CS (3) t WP t AS t WR WE t WHZ DATAOUT (6) (6) PREVIOUS DATA VALID t OW DATA (4) VALID (4) t DW DATAIN t CHZ (6) t DH , DATA VALID 3090 drw 08 Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,2,5) t WC ADDRESS t AW CS tAS (3) t CW tWR WE t DW DATAIN t DH , DATA VALID NOTES: 1. WE or CS must be HIGH during all address transitions. 2. A write occurs during the overlap of a LOW CS and a LOW WE. 3. tWR is measured from the earlier of CS or WE going HIGH to the end of the write cycle. 4. During this period, the I/O pins are in the output state and input signals should not be applied. 5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high impedance state. 6. Transition is measured ±200mV from steady state. 6.42 7 3090 drw 09 IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Co mmercial Temperature Ranges Ordering Information -- Commercial & Industrial IDT 6168 XX XXX XX X Device Type Power Speed Package Process/ Temperature Range Blank I Commercial (0°C to +70°C) Industrial (-45°C to +85°C) P 300mil Plastic DIP (P20-1) (Commercial & Industrial only) 15* 20 25 Commercial Only Commercial Only Commercial &Industrial SA LA Standard Power Low Power Speed in nanoseconds *Standard power only. 3090 drw 10 Ordering Information -- Military IDT 6168 XX XXX XX X Device Type Power Speed Package Process/ Temperature Range B Military (-55°C to +125°C) Compliant to MIL-STD-883, Class B D L 300mil Ceramic DIP (D20-1) 20-pin Leadless Chip Carrier (L20-1) 25 45 Speed in nanoseconds SA LA Standard Power Low Power *Standard power only. 8 3090 drw 10a IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Co mmercial Temperature Ranges Datasheet Document History 11/22/99 01/07/00 08/09/00 02/01/01 Pg. 8 Pg. 1, 2, 3, 5, 6, 8 Pg. 1, 2, 8 Updated to new format Added Datasheet Document History Added Industrial Temperature range offerings Revised package offerings Not recommended for new designs Removed "Not recommended for new designs" CORPORATE HEADQUARTERS 2975 Stender Way Santa Clara, CA 95054 for SALES: 800-345-7015 or 408-727-6116 fax:408-492-8674 www.idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 6.42 9 for Tech Support: [email protected] 800 544-7726, x4033