Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCBO VCEO VEBO IC ICM Ptot VCEsat tf Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Emitter-Base voltage (IB = 0) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time VBE = 0 V 0.35 40 700 700 400 9 8 16 80 2.0 120 V V V V A A W V ns PINNING - TO220AB PIN base 2 collector 3 emitter tab PIN CONFIGURATION DESCRIPTION 1 Tmb ≤ 25 ˚C IC = 5.0 A;IB = 1.0 A IC = 5 A; IB1 = 1 A SYMBOL c tab b collector e 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO VCBO VEBO IC ICM IB IBM Ptot Tstg Tj Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Emitter-Base voltage (IB = 0) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V Tmb ≤ 25 ˚C MIN. MAX. UNIT -65 - 700 400 700 9 8 16 4 8 80 150 150 V V V V A A A A W ˚C ˚C TYP. MAX. UNIT - 1.56 K/W 60 - K/W THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Junction to mounting base Rth j-a Junction to ambient February 1999 CONDITIONS in free air 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS ICES ICES Collector cut-off current 1 IEBO VCEOsust Emitter cut-off current Collector-emitter sustaining voltage VCEsat VCEsat VCEsat Collector-emitter saturation voltage VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 9 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 2.0 A;IB = 0.4 A IC = 5.0 A;IB = 1.0 A IC = 5.0 A;IB = 1.0 A (TC = 100˚C) MIN. TYP. MAX. UNIT - - 0.2 1.0 mA mA 400 - 1.0 - mA V - 0.15 0.35 0.51 1.0 2.0 3.0 V V V VBEsat VBEsat VBEsat Base-emitter saturation voltage IC = 2.0 A;IB = 0.4 A IC = 5.0 A;IB = 1.0 A IC = 5.0 A;IB = 1.0 A (TC = 100˚C) - 0.92 1.05 1.00 1.2 1.6 1.5 V V V hFE hFEsat DC current gain IC = 2.0 A; VCE = 5 V IC = 5.0 A; VCE = 5 V 8 5 17 9 40 30 TYP. MAX. UNIT 1.8 0.3 3.0 0.7 µs µs 1.2 40 2.0 120 µs ns 1.6 100 3.0 200 µs ns DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ts tf PARAMETER CONDITIONS Switching times (resistive load) ICon = 5 A; IBon = -IBoff = 1 A; RL = 75 ohms; VBB2 = 4 V; Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time ICon = 5 A; IBon = 1 A; LB = 1 µH; -VBB = 5 V ICon = 5 A; IBon = 1 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C 1 Measured with half sine-wave voltage (curve tracer). February 1999 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 ICon 90 % + 50v 100-200R 90 % IC 10 % ts Horizontal ton tf toff Oscilloscope IBon IB Vertical 10 % 300R 1R tr 30ns 6V 30-60 Hz -IBoff Fig.1. Test circuit for VCEOsust. Fig.4. Switching times waveforms with resistive load. VCC IC / mA LC 250 IBon 100 LB T.U.T. 10 0 -VBB min VCE / V VCEOsust Fig.2. Oscilloscope display for VCEOsust. VCC Fig.5. Test circuit inductive load. = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH VCC ICon 90 % IC RL VIM 10 % RB 0 T.U.T. ts toff tp IB tf t IBon T t -IBoff Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. February 1999 Fig.6. Switching times waveforms with inductive load. 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor 120 PHE13007 Normalised Power Derating PD% VCEsat/V 110 2.0 100 90 1.6 80 IC=1A 70 2A 3A 4A 1.2 60 50 0.8 40 30 0.4 20 10 0 0 20 40 60 80 Tmb / C 100 120 0.0 0.01 140 0.10 1.00 10.00 IB/A Fig.7. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) Fig.10. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IB); Tj=25˚C. VBESAT/V 1.4 HFE 50 1.3 30 Tj=100C 1.2 20 25C 15 1.1 -40C 10 1 0.9 5 -40C 0.8 Tj=100C 25C 0.7 2 VCE=1V 0.6 0.01 0.05 0.1 0.3 IC/A 1 2 3 5 0.5 0.1 10 Fig.8. Typical DC current gain. hFE = f(IC) parameter VCE 0.5 1 IC/A 2 5 10 Fig.11. Base-Emitter saturation voltage. Solid lines = typ values, VBEsat = f(IC); at IC/IB =4. HFE 50 VCESAT/V 0.6 30 0.5 Tj=100C Tj=100C 20 25C 0.4 15 -40C 0.3 10 25C 0.2 5 -40C VCE=5V 2 0.01 0.05 0.1 0.1 0.3 IC/A 1 2 3 5 0 0.2 10 Fig.9. Typical DC current gain. hFE = f(IC) parameter VCE February 1999 0.4 0.6 1 IC/A 2 5 6 Fig.12. Collector-Emitter saturation voltage. Solid lines = typ values, VCEsat = f(IC); at IC/IB =4. 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor 10 PHE13007 IC/A 11 Zth / (K/W) 10 9 8 1 7 D= 0.5 6 0.1 0.2 0.1 0.05 0.02 0 5 tp PD D= 4 T -3V 3 t T 0.01 1E-06 -5V tp 2 -1V 1 1E-04 1E-02 t/s 1E+00 0 0 Fig.13. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T 100 200 300 400 500 VCEclamp/V 600 700 800 Fig.15. Reverse bias safe operating area (Tj < Tjmax) for -VBE = 5V,3V & 1V. VCC LC IBon -VBB VCL LB T.U.T. Fig.14. Test circuit for reverse bias safe operating area. Vclamp < 700V; Vcc = 150V; -Vbe = 5V,3V & 1V; LB = 1µH; LC = 200µH. February 1999 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.16. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". February 1999 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 1999 7 Rev 1.000