DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D050 BB809 VHF variable capacitance diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification VHF variable capacitance diode BB809 FEATURES • High linearity • Matched to 3% k handbook, halfpage • Hermetically sealed leaded glass SOD68 (DO-34) package a • C28: 4.7 pF; ratio: 9 MAM159 • Low series resistance. Cathode side indicated by a yellow band on a black body. APPLICATIONS Fig.1 Simplified outline (SOD68; DO-34) and symbol. • Electronic tuning in VHF television tuners, band A up to 160 MHz • VCO. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). DESCRIPTION SYMBOL PARAMETER MIN. MAX. UNIT The BB809 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. VR continuous reverse voltage − 30 V IF continuous forward current − 20 mA Tstg storage temperature −55 +150 °C Tj operating junction temperature −55 +100 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL IR PARAMETER reverse current CONDITIONS MIN. TYP. MAX. UNIT VR = 28 V; see Fig.3 − − 10 nA VR = 28 V; Tj = 85 °C; see Fig.3 − − 200 nA rs diode series resistance f = 200 MHz; note 1 − − 0.6 Ω Cd diode capacitance VR = 1 V; f = 1 MHz; see Figs 2 and 4 39 − 46 pF VR = 28 V; f = 1 MHz; see Figs 2 and 4 4 − 5 pF C d ( 1V ) -------------------C d ( 28V ) capacitance ratio f = 1 MHz 8 − 10 ∆C d ---------Cd capacitance matching VR = 0.5 to 28 V − − 3 Note 1. VR is the value at which Cd = 25 pF. 1996 May 03 2 % Philips Semiconductors Product specification VHF variable capacitance diode BB809 GRAPHICAL DATA MBE610 - 1 50 handbook, full pagewidth Cd (pF) 40 30 20 10 0 10 −1 1 10 10 2 VR (V) f = 1 MHz; Tj = 25 °C. Fig.2 Diode capacitance as a function of reverse voltage; typical values. MLC816 10 3 handbook, halfpage TC d (K−1) IR (nA) 10 4 102 10 MLC815 10 3 handbook, halfpage 0 50 o T j ( C) 10 5 10 1 100 1 10 VR (V) 10 Tj = 0 to 85 °C. Fig.4 Fig.3 Reverse current as a function of junction temperature; maximum values. 1996 May 03 3 Temperature coefficient of diode capacitance as a function of reverse voltage; typical values. 2 Philips Semiconductors Product specification VHF variable capacitance diode BB809 PACKAGE OUTLINE handbook, full pagewidth 0.55 max 1.6 max 25.4 min 3.04 max 25.4 min MSA212 - 1 Dimensions in mm. Fig.5 SOD68 (DO-34). DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 03 4