DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D053 BB130 AM variable capacitance diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification AM variable capacitance diode BB130 FEATURES • Matched to 3% • Leaded plastic package handbook, halfpage • C28: 18 pF; ratio: 27. k a MAM222 APPLICATIONS • Electronic tuning in AM radio applications Fig.1 Simplified outline (SOD69; TO-92 variant) and symbol. • VCO. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). DESCRIPTION The BB130 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD69 (TO-92 variant) leaded plastic package. SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 50 mA Tstg storage temperature −55 +125 °C Tj operating junction temperature −55 +85 °C ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL IR PARAMETER reverse current CONDITIONS MIN. TYP. MAX. UNIT VR = 30 V; see Fig.3 − − 50 nA VR = 30 V; Tj = 85 °C; see Fig.3 − − 300 nA rs diode series resistance f = 1 MHz; note 1 − − 2 Ω Cd diode capacitance VR = 1 V; f = 1 MHz; see Figs 2 and 4 450 − 550 pF VR = 28 V; f = 1 MHz; see Figs 2 and 4 12 − 21 pF C d ( 1V ) -------------------C d ( 28V ) capacitance ratio f = 1 MHz 23 − − ∆C d ---------Cd capacitance matching VR = 1 to 28 V; note 2 − − 3 Notes 1. VR = 1 V. 2. For a set of 2 diodes. 1996 May 03 2 % Philips Semiconductors Product specification AM variable capacitance diode BB130 GRAPHICAL DATA MGC812 600 handbook, full pagewidth Cd (pF) 400 200 0 10 −1 1 10 102 VR (V) f = 1 MHz. Fig.2 Diode capacitance as a function of reverse voltage; typical values. MGC809 10 3 handbook, halfpage MLC815 10 3 handbook, halfpage IR (nA) TC d (K−1) 10 4 102 10 0 20 40 60 80 10 5 10 1 100 o Tj ( C) Fig.4 Fig.3 Reverse current as a function of junction temperature; maximum values. 1996 May 03 3 1 10 VR (V) 102 Temperature coefficient of diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification AM variable capacitance diode BB130 PACKAGE OUTLINE 0.40 min 4.2 max 1.6 4.8 max 2.54 5.2 max 12.7 min 0.49 max k a MBC879 0.67 max dimensions within 2.5 max uncontrolled Dimensions in mm. Fig.5 SOD69 (TO-92 variant). DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 03 4