DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY2016 UHF amplifier module Product specification Supersedes data of 1999 Nov 24 2000 Jan 04 Philips Semiconductors Product specification UHF amplifier module BGY2016 FEATURES PINNING - SOT365A • 26 V nominal supply voltage PIN • 16 W output power into a load of 50 Ω with an RF drive power of ≤20 mW. APPLICATIONS • Base station transmitting equipment operating in the 1805 to 1990 MHz frequency band. DESCRIPTION 1 RF input 2 VS1 3 VS2 4 RF output Flange ground DESCRIPTION The BGY2016 is a three-stage UHF amplifier module in a SOT365A package with a plastic cap. It consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic AlN substrate. handbook, halfpage 1 2 3 4 MSA447 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. f (MHz) VS1 (V) VS2 (V) PL (W) Gp (dB) η (%) ZS; ZL (Ω) 1805 to 1990 5 26 ≥16 ≥28 ≥30 50 MIN. MAX. UNIT MODE OF OPERATION CW LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS VS1 DC supply voltage 4.5 5.5 V VS2 DC supply voltage − 28 V PD input drive power − 120 mW PL load power − 20 W Tstg storage temperature −30 +100 °C Tmb operating mounting base temperature −10 +90 °C 2000 Jan 04 Tmb = 25 °C 2 Philips Semiconductors Product specification UHF amplifier module BGY2016 CHARACTERISTICS Tmb = 25 °C; VS1 = 5 V; VS2 = 26 V; PL = 16 W; ZS = ZL = 50 Ω unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT f frequency 1805 − 1990 MHz IS1 supply current − 80 − mA IS2 supply current PD < −60 dBm − 430 − mA PL load power PD < 20 mW Gp power gain ∆Gp in band gain variation f = 1930 to 1990 MHz; PL = 5 W − − 2 dB Gp1 - Gp2 gain expansion Gp1 at PL = 160 mW; Gp2 at PL = 5 mW − − ±1 dB η efficiency PL = 16 W 30 − − % H2 second harmonic PL = 16 W − − −35 dBc H3 third harmonic PL = 16 W − − −40 dBc VSWRin input VSWR − − 2:1 B 2000 Jan 04 f = 1805 to 1880 MHz; PL = 5 W 16 − − W 28 − 35 dB − − 2 dB stability VSWR ≤ 2 : 1 through all phases; PL ≤ 16 W; VS2 = 25 to 27 V − − −60 dBc reverse intermodulation Pcarrier = 16 W; Preverse = −40 dBc; fi = fc ±200 kHz − − −53 dBc AM bandwidth corner frequency = 3 dB; Pcarrier = 16 W; modulation = 20% 2 − − MHz ruggedness VSWR ≤ 5 : 1 through all phases 3 no degradation Philips Semiconductors Product specification UHF amplifier module BGY2016 APPLICATION INFORMATION handbook, full pagewidth Z1 C7 C8 C5 C6 R1 L1 R2 C3 C4 C1 C2 50 Ω input VS1 Z2 L2 50 Ω output VS2 MGM861 Fig.2 Test circuit. List of components (See Figs 2 and 3) COMPONENT DESCRIPTION VALUE CATALOGUE NO. C1, C2 electrolytic capacitor 10 µF; 35 V − C3, C4 multilayer ceramic chip capacitor 10 nF; 50 V − C5, C6 multilayer ceramic chip capacitor 100 pF; 50 V − C7, C8 multilayer ceramic chip capacitor 10 pF; 50 V − L1, L2 Grade 4S2 Ferroxcube bead − 4330 030 36300 R1, R2 metal film resistor 10 Ω; 0.4 W 2322 195 13109 Z1, Z2 stripline; note 1 50 Ω − Note 1. The striplines are on a double copper-clad printed-circuit board with epoxy dielectric (εr = 4.5); thickness = 1 mm. 2000 Jan 04 4 Philips Semiconductors Product specification UHF amplifier module BGY2016 90 handbook, full pagewidth 42 C7 C8 C6 C5 R1 Z2 L1 L2 C3 C4 C1 C2 output VS1 R2 Z1 VS2 input Dimensions in mm. Fig.3 Printed-circuit board component layout. 2000 Jan 04 5 MGM862 Philips Semiconductors Product specification UHF amplifier module BGY2016 MOUNTING RECOMMENDATIONS To ensure a good thermal contact and to prevent mechanical stress when bolted down, the flatness of the mounting base is designed to be typically better than 0.1 mm. The mounting area of the heatsink should be flat and free from burrs and loose particles. The heatsink should be rigid and not prone to bowing under thermal cycling conditions. The thickness of a solid heatsink should be not less than 5 mm to ensure a rigid assembly. A thin, even layer of thermal compound should be applied between the mounting base and the heatsink to achieve the best possible thermal contact resistance. Excessive use of thermal compound will result in an increase in thermal resistance and possible bowing of the mounting base; too little will also result in poor thermal conduction. The module should be mounted to the heatsink using 3 mm bolts with flat washers. The bolts should first be tightened to “finger tight” and then further tightened in alternating steps to a maximum torque of 0.4 to 0.6 Nm. Once mounted on the heatsink, the module leads can be soldered to the printed-circuit board. A soldering iron may be used up to a temperature of 250 °C for a maximum of 10 seconds at a distance of 2 mm from the plastic cap. ESD precautions must be taken to protect the device from electrostatic damage. 2000 Jan 04 6 Philips Semiconductors Product specification UHF amplifier module BGY2016 PACKAGE OUTLINE Plastic rectangular single-ended flat package; flange mounted; 2 mounting holes; 4 in-line leads SOT365A D A F y U q A U2 p E U1 L 1 2 3 4 bp e1 e w M e c v A Z 0 Q 10 20 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E mm 9.5 9.0 0.56 0.46 0.3 0.2 30.1 29.9 18.6 18.4 OUTLINE VERSION e e1 2.54 17.78 F L p Q 3.25 3.15 6.5 6.1 4.1 3.9 4.0 3.8 REFERENCES IEC JEDEC EIAJ SOT365A 2000 Jan 04 q U 40.74 48.0 40.54 48.4 U1 U2 v w y Z 15.4 15.2 7.75 7.55 0.3 0.25 0.1 12.8 12.6 EUROPEAN PROJECTION ISSUE DATE 99-02-06 7 Philips Semiconductors Product specification UHF amplifier module BGY2016 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2000 Jan 04 8 Philips Semiconductors Product specification UHF amplifier module BGY2016 NOTES 2000 Jan 04 9 Philips Semiconductors Product specification UHF amplifier module BGY2016 NOTES 2000 Jan 04 10 Philips Semiconductors Product specification UHF amplifier module BGY2016 NOTES 2000 Jan 04 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125002/03/pp12 Date of release: 2000 Jan 04 Document order number: 9397 750 06658