DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D373 BGY212A UHF amplifier module Preliminary specification 1999 Aug 23 Philips Semiconductors Preliminary specification UHF amplifier module BGY212A PINNING - SOT482C FEATURES • 3.5 V nominal supply voltage PIN DESCRIPTION • 2 W output power 1 RF input • Easy output power control by DC voltage. 2 VC 3 VS APPLICATIONS 4 RF output • Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in the 1710 to 1785 MHz frequency range. 5 ground DESCRIPTION book, halfpage The BGY212A is a three-stage UHF amplifier module in a SOT482C leadless package with a plastic cover. The module consists of one NPN silicon planar transistor die and one bipolar monolithic integrated circuit mounted together with matching and bias circuit components on a metallized ceramic substrate. 5 4 3 2 Bottom view 1 MBK201 Fig.1 Simplified outline QUICK REFERENCE DATA RF performance at Tmb = 25 °C. f (MHz) VS (V) VC (V) PL (dBm) Gp (dB) η (%) ZS , ZL (Ω) 1710 to 1785 3.5 ≤2.2 typ. 33 typ. 33 typ. 40 50 MODE OF OPERATION Pulsed; δ = 1 : 8 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS PARAMETER DC supply voltage CONDITIONS MIN. MAX. UNIT VC < 0.2 V; PD = 0 mW − 7 V VC ≥ 0.2 V − 4.1 V VC DC control voltage − 2.7 V PD input drive power − 10 dBm PL load power − 34.1 dBm Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −30 +100 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 1999 Aug 23 2 Philips Semiconductors Preliminary specification UHF amplifier module BGY212A CHARACTERISTICS ZS = ZL = 50 Ω; PD = 0 dBm; VS = 3.5 V; VC ≤ 2.2 V; f = 1710 to 1785 MHz; Tmb = 25 °C; δ = 1 : 8; tp = 575 µs unles otherwise specified. SYMBOL IQ PARAMETER leakage current CONDITIONS MIN. TYP. MAX. UNIT VC = 0.2 V − − 10 µA VC = 0.2 V; VS = 7 V − 5 20 mA − 3 mA ICM peak control current adjust V C for PL = 32 dBm − PL load power VC = 2.2 V; VS = 3.5 V − 33.2 − dBm VC = 2.2 V; VS = 3.2 V 32 32.3 − dBm VC = 2.2 V; VS = 3.2 V; Tmb = 85 °C 31 31.8 − dBm Gp power gain PL = 32 dBm − 32 − dB η efficiency PL = 32 dBm − 40 − % H2 second harmonic PL = 32 dBm − − −35 dBc H3 third harmonic PL = 32 dBm − − −40 dBc VSWRin input VSWR PL = 2 to 32 dBm − stability VS = 3.2 to 4.1 V; PD = −3 to 3 dBm; VC = 0 to 2.2 V; PL ≤ 33 dBm; VSWR ≤ 8 : 1 through all phases − − −60 dBc isolation VC = 0.2 V; PD = 3 dBm control bandwidth 3:1 − −36 −33 dBm tbd − − MHz noise power PL = 2 to 32 dBm; bandwidth = 100 kHz; 20 MHz above transmission band − −73 −71 dBm AM/AM conversion PD with 3% AM; f = 100 kHz; PL = 2 to 32 dBm − 5 8 % AM/PM conversion PD = −0.5 to 0.5 dBm; PL = 2 to 32 dBm − − tbd deg/dB control slope PL = −8 to +2 dBm − tbd − dB / V PL = 2 to 32 dBm − tbd − dB / V TX / RX conversion PL = 32 dBm; f = 1785 MHz PL (1805 MHz) / PD (1765 MHz) − 28 30 dB tr carrier rise time PL = 2 to 32 dBm; time to settle within −0.5 dB of final PL − 1.5 2 µs tf carrier fall time PL = 2 to 32 dBm; time to fall below − 33 dBm − 1.5 2 µs ruggedness VS = 4.1 V; adjust VC for PL = 33 dBm; VSWR ≤ 8 : 1 through all phases Pn 1999 Aug 23 3 no degradation Philips Semiconductors Preliminary specification UHF amplifier module BGY212A 3 PL (W) 4 PL (W) 1710MHz 1710MHz 1785MHz 3 1785MHz 2 2 1 1 0 0 1 1.5 2 2.5 2 3 4 VC (V) ZS = ZL = 50 Ω; V S = 3.5 V; P D = 0 dBm; ZS = ZL = 50 Ω; VC = 2.2 V; PD = 0 dBm; Tmb = 25 °C; δ = 1 : 8; t p = 575 µs. Tmb = 25 °C; δ = 1 : 8; tp = 575 µs. Fig.2 Load power as a function of control voltage; typical values. Fig.3 50 Load power as a function of supply voltage; typical values. 3 PL (W) η (%) 5 VS (V) 1785MHz 40 1710MHz 2 30 20 1 10 0 0 0.5 1 1.5 2 0 1700 2.5 1750 PL (W) ZS = ZL = 50 Ω; V S = 3.5 V; P D = 0 dBm; ZS = ZL = 50 Ω; VS = 3.5 V; P D = 0 dBm; VC = 2.2 V; Tmb = 25 °C; δ = 1 : 8; t p = 575 µs. Fig.4 Tmb = 25 °C; δ = 1 : 8; t p = 575 µs. Efficiency as a function of load power; typical values. 1999 Aug 23 1800 f (MHz) Fig.5 4 Load power as a function of frequency; typical values. Philips Semiconductors Preliminary specification UHF amplifier module BGY212A 0 H2, H3 (dBc) 4 VSWRIN -20 3 H2 -40 1710MHz H3 2 1785MHz -60 -80 1700 1 0 1 2 3 1750 1800 f (MHz) PL (W) ZS = ZL = 50 Ω; V S = 3.5 V; P D = 0 dBm; ZS = ZL = 50 Ω; VS = 3.5 V; P D = 0 dBm; PL = 1.6 W; Tmb = 25 °C; δ = 1 : 8; t p = 575 µs Tmb = 25 °C; δ = 1 : 8; t p = 575 µs. Fig.6 Input VSWR as a function of load power; typical values. Fig.7 16 output AM (%) 12 3 PL (W) (1) 2 (2) (3) (4) Harmonics as a function of frequency; typical values. 1710MHz 1785MHz 8 1 4 0 0 0 20 40 60 -20 80 100 Tmb (°C) 0 20 40 PL (dBm) ZS = Z L = 50 Ω; PD = 0 dBm; VC = 2.2 V; δ = 1 : 8; tp = 575 µs. (1) VS = 3.5 V; f = 1710 MHz. (2) VS = 3.5 V; f = 1785 MHz. ZS = ZL = 50 Ω; VS = 3.5 V; P D = 0 dBm; Tmb = 25 °C; (3) VS = 3.2 V; f = 1710 MHz. ∆f = 100 kHz; input amplitude modulation = 3%; δ = 1 : 8; tp = 575 µs. (4) VS = 3.2 V; f = 1785 MHz. Fig.8 Load power as a function of mounting base temperature; typical values. 1999 Aug 23 Fig.9 5 Output amplitude modulation as a function of load power; typical values. Philips Semiconductors Preliminary specification UHF amplifier module BGY212A Fig.11 Test circuit List of components (See Fig 10) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1 multilayer ceramic chip capacitor 680 pF 2222 851 11681 C2 multilayer ceramic chip capacitor 100 nF 2222 910 16549 C3 electrolytic capacitor 47 µF; 40 V Z1 , Z2 stripline; note 1 50 Ω R1 metal film resistor 100 Ω; 0.6 W 2222 030 37479 width 2.3 mm − 2322 156 11001 Note 1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.2); thickness 1⁄32 inch. 1999 Aug 23 6 Philips Semiconductors Preliminary specification UHF amplifier module BGY212A SOLDERING The indicated temperatures are those at the solder interfaces. MGM159 300 handbook, halfpage Advised solder types are types with a liquidus less than or equal to 210 °C. T (°C) Solder dots or solder prints must be large enough to wet the contact areas. 200 Soldering can be carried out using a conveyor oven, a hot air oven, an infrared oven or a combination of these ovens. A double reflow process is permitted. 100 Hand soldering is not recommended because the soldering iron tip can exceed the maximum permitted temperature of 250 °C and damage the module. In case handsoldering is needed, recommendations can be found in RNR-45-98-A-0485. 0 0 The maximum allowed temperature is 250 °C for a maximum of 5 seconds. The maximum ramp-up is 10 °C per second. 2 3 4 t (min) 5 Fig.12 Recommended reflow temperature profile. The maximum cool-down is 5 °C per second. Cleaning The following fluids may be used for cleaning: • Alcohol • Bio-Act (Terpene Hydrocarbon) • Acetone. Ultrasonic cleaning should not be used since this can cause serious damage to the product. 1999 Aug 23 1 7 Philips Semiconductors Preliminary specification UHF amplifier module BGY212A 4.400 handbook, full pagewidth 4.000 4.000 0 2.5 mm 2.800 3.200 scale 1.800 0.500 0.600 1.400 2.500 1.000 1.800 1.300 14.300 13.500 12.900 10.700 2.250 1.350 (2×) 2.500 4.800 (2×) 1.900 0.800 1.950 0.900 3.200 5.650 (2×) 5.900 (2×) 6.700 (2×) 2.400 13.500 2.250 1.700 1.200 1.300 1.000 0.050 MGS345 0.900 0.900 1.200 1.000 0.600 1.300 Solder land 2.300 3.150 3.700 3.900 Solder paste Green tape area, max. height 0.03 mm Dimensions in mm. Fig.13 Footprint SOT482C. 1999 Aug 23 0.450 8 Philips Semiconductors Preliminary specification UHF amplifier module BGY212A PACKAGE OUTLINE Leadless surface mounted package; plastic cap; 4 terminations e b (4×) e1 e d b1 b2 b2 b3 SOT482C b3 1 2 3 L 4 L1 L2 D D1 A c 5 E1 E pin 1 index 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 b2 b3 c D D1 d E E1 e e1 L L1 L2 mm 1.90 1.59 1.9 1.7 1.4 1.2 0.8 0.6 0.6 0.4 0.70 0.57 13.7 13.3 13.35 13.05 2.0 8.2 7.8 7.85 7.55 2.6 2.4 4.6 4.4 1.15 0.85 2.65 2.35 3.85 3.55 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-05-18 99-08-16 SOT482C 1999 Aug 23 EUROPEAN PROJECTION 9 Philips Semiconductors Preliminary specification UHF amplifier module BGY212A DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Aug 23 10 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Portugal: see Spain China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Romania: see Italy Colombia: see South America Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Czech Republic: see Austria Slovakia: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Slovenia: see Italy Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1999 SCA 67 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands budgetnum/printrun/ed/pp11 Date of release: 1999 Aug 23 Document order number: 9397 750 06248