MITSUBISHI M5M29F25611VP

MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
DESCRIPTION
The MITSUBISHI M5M29F25611 is a CMOS Flash Memory
with AND type multi-level memory cells.
It has fully automatic programming and erase capabilities
with a single 3.3V power supply.
The functions are controlled by simple external commands.
To fit the I/O card applications, the unit of programming and
erase is as small as (2048+64) bytes.
Available sectors of M5M29F25611 are more than
16,057(98% of all sector address) and less than 16,384
sectors.
FEATURES
On-board single power supply(Vcc) :
Vcc=3.0V to 3.6V
Organization
AND Flash Memory :
(2048+64)bytes x (More than 16,057 sectors)
Data register : (2048+64)bytes
Multi-level memory cell:
2bit / per memory cell.
Automatic programming :
Sector program time : 2.5 ms typ.
System bus free
Address,data latch function
Internal automatic program verify function
Status data polling function
Automatic erase :
Single sector erase time : 1.0 ms typ.
System bus free
Internal automatic erase verify function
Status data polling function
Erase mode :
Single sector erase ((2048+64)byte unit)
Fast access time :
Serial read First access time : 50µs max.
Serial access time : 50ns max.
Low power dissipation :
ICC2 = 30mA typ. / 50mA max. (Read)
ISB2 = 30µA typ. / 50µA max. (Standby)
ICC3 = 20mA typ. / 40mA max. (Program)
ICC4 = 20mA typ. / 40mA max. (Erase)
ISB3 = 1µA typ. / 10µA max. (Deep standby)
Package : 48pin-TSOP(I) (12.0 x 20.0mm2)
1
PIN CONFIGURATION(TOP VIEW)
GND
Vcc
DQ0
DQ1
DQ2
DQ3
GND
NC
NC
NC
NC
NC
NC
NC
NC
Vcc
DQ4
DQ5
DQ6
DQ7
SC
GND
GND
1
2
3
4
5
6
7
8
9
10
48
47
11
12
13
14
15
16
17
18
19
20
21
22
23
24
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
M5M29F25611VP
GND
GND
NC
NC
NC
Vcc
NC
NC
NC
NC
NC
NC
NC
NC
GND
R/
DU
NC
Vcc
GND
Outline 48P3R-B
Pin Description
Pin name
DQ0-7
Vcc note1
GND note1
R/
Function
Input / Output
Chip enable
Output enable
Write enable
Command data enable
Power supply
Ground
SC
NC
Ready /
Reset
Serial clock
No connect
DU note2
Don't Use
Note1:All Vcc and GND pins should be connected to
a common power supply and a ground, respectively.
Note2:Pin should not be connected to anything.
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Block Diagram
2048+64
Sector
Address
Buffer
X-Decoder
16384 x (2048+64) x 8
Memory Matrix
Data Register(2048+64)
8
~
DQ0
DQ7
Multiplexer
Data
Input
Buffer
Input
Data
Control
~
Y-Gating
Y-Decoder
Data
Output
Buffer
~
R/
Y-Address
Counter
Vcc
GND
Read/Program/
Erase Control
SC
2
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Memory Map & Address
Sector Address.
3FFFH
3FFEH
3FFDH
0002H
0001H
0000H
2048 Bytes
64Bytes
2048 Bytes
64 Bytes
2048 Bytes
64Bytes
2048 Bytes
64 Bytes
2048 Bytes
64 Bytes
2048 Bytes
64 Bytes
000H
800H
83FH Column Address
(2048+ 64) Bytes
Control Bytes
SA(1) : First Cycle
Sector address
SA(2) : Second Cycle
CA(1) : First Cycle
Column address
CA(2) : Second Cycle
DQ0 DQ1 DQ2 DQ3 DQ4
SA0 SA1 SA2 SA3 SA4
SA8 SA9 SA10 SA11 SA12
CA0 CA1 CA2 CA3 CA4
CA8 CA9 CA10 CA11 X
DQ5 DQ6 DQ7
SA5 SA6 SA7
SA13 X
X
CA5 CA6 CA7
X
X
X
(Note2)
Note 1: Some failed sectors may exist in the device.
The failed sectors can be recognized by reading the sector valid data written in a
part of the column address 820H - 825H. The sector valid data must be read and
kept outside of the sector before the sector erase.
When the sector is programmed, the sector valid data should be written back to
the sector.
2: An X means “Don’t care”. The pin level can be set to either VIL or VIH, as shown
on page 12.
3
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Mode Selection
Pin
Mode
(note3)
R/
SC
Deep Standby
(note4)
Standby
Output disable
Status register read
Command Write
(note1)
X
VIH
VIL
VIL
X
X
VIH
VIL
X
X
VIH
VIH
X
X
X
X
VILR
VIHR
VIHR
VIHR
X
X
X
X
VOH
VOH
VOH
VOH
(note2)
VIL
VIH
VIL
VIL
VIHR
VIL
VOH
DQ0 - DQ7
Hi - Z
Hi - Z
Hi - Z
Status register
outputs
Din
Notes: 1. Default mode after the power on is the status register read mode(refer to status transition P.11).
From DQ0 to DQ7 pins output the status when
=VIL and
=VIL.
2. Refer to the command definition(P.5). Data can be read, programmed and erased after commands
are written in this mode.
3. The R/ bus should be pulled up to Vcc to maintain the VOH level while the R/ pin outputs
a high impedance.
4. An X means “Don’t care”. The pin level can be set to either VIL or VIH as shown on page 12.
Pin Description
is used to select the device. The status returns to the Standby at the rising edge of
in the
reading operation. However, the status does not return to the Standby at the rising edge of
in
the busy state in programming and erase operation.
Memory data, status register data and identifier code (ID code) can be read, when
Commands and address are latched at the rising edge of
is VIL.
.
SC
Programming and reading data is latched at the rising edge of SC.
pin must be kept at the VILR (GND±0.2V) level when Vcc is turned on and off. In this way,
data in the memory is protected against unintentional erase and programming.
must be kept
at the VIHR (Vcc±0.2V) level during any operations such as programming, erase and read
Commands and data are latched when
is VIL and Address is latched when
is VIH.
R/
The R/ indicates the program/erase status of the flash memory. The R/ signal is initially at a
high impedance state. It turns to a VOL level after the (40H) command in programming operation or
the(B0H) command in erase operation. No commands can be written during the R/ pin outputs a VOL.
After the erase or programming operation finishes, the R/ signal turns back to the high impedance state.
The R/ indicates the first access status of the flash memory in serial read (1) and (2). It turns to
a VOL level after the sector address (SA(2)) in serial read (1) and serial read (2) operation.
No commands can be written during the R/ pin outputs a VOL. Also, no serial clock can be input during
the R/ pin outputs a VOL. After the first access operation finishes, the R/ signal turns back to the high
impedance state.
DQ0-DQ7
The DQ pins are used to input data, address and command, and are used to output memory data,
status register data and identifier code (ID code).
4
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Command Definition (note 1,2)
Second cycle
First
Bus
cycles
Command
Serial read(1)
Without CA
With CA
3
3+2h(note6)
3
Serial read(2)
Read identifier codes
Data Recovery Read
Single sector
Auto Erase
Program (1)
Auto Program
1
1
4
4
Without CA (note 7)
With CA (note 7)
4+2h(note6)
Program (2) (note 10)
4
Program (3) (control bytes) (note 7)
4
4
Program (4)
Without CA (note 7)
With CA (note 7)
4+2h(note6)
Reset
1
Clear status register
1
Data Recovery Write
4
Operation
mode (note 3)
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Data
in
Operation
mode
00H
00H
F0H
90H
01H
20H
10H
10H
1FH
0FH
11H
11H
FFH
50H
12H
Write
Write
Write
Read
Read
Write
Write
Write
Write
Write
Write
Write
-
Write
Third cycle
Command
Serial read(1)
Serial read(2)
Auto Erase
Auto Program
Without CA
With CA
Single sector
Program (1)
Operation
mode
Data
in
3
3+2h(note6)
3
4
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
SA(2) (note4)
SA(2) (note4)
SA(2) (note4)
Write
Program (2) (note 10)
4
Program (3) (control bytes)
(note 7)
4
Program (4)
Without CA (note 7)
4
With CA (note 7)
4+2h(note6)
Data Recovery Write
Fourth cycle
Bus
cycles
Without CA (note 7)
4
With CA (note 7)
4+2h(note6)
4
Data
in
out
SA(1) (note 4)
SA(1) (note 4)
SA(1) (note 4)
ID (note8,9)
Recovery Data
SA(1) (note 4)
SA(1) (note 4)
SA(1) (note 4)
SA(1) (note 4)
SA(1) (note 4)
SA(1) (note 4)
SA(1) (note 4)
SA(1) (note 4)
-
Command
Serial read(1)
Auto Program
With CA
Program (1)
Program (4)
With CA (note 7)
With CA (note 7)
3+2h(note6)
4+2h(note6)
4+2h(note6)
CA(1) (note5)
-
Write
-
(note4)
(note4)
(note4)
(note4)
(note4)
(note4)
Write
Write
Write
Write
Write
Write
Write
B0H (note11)
40H (note11,12)
CA(1) (note5)
40H (note11,12)
40H (note11,12)
CA(1) (note5)
SA(2) (note4)
Write
40H (note11,12)
SA(2) (note4)
SA(2)
SA(2)
SA(2)
SA(2)
SA(2)
SA(2)
Fifth cycle
Bus
cycles
Data
in
Operation
mode
40H (note11,12)
Sixth cycle
Operation
mode
Data
in
Write
Write
Write
CA(2) (note5)
CA(2) (note5)
CA(2) (note5)
Data
in
Operation
mode
-
-
Write
Write
40H (note11,12)
40H (note11,12)
Notes : 1. Commands, sector address and column address are latched at rising edge of
pulses.
Program data is latched at rising edge of SC pulses.
2. The chip is in the read status register mode when
is set to VIHR first time after the power up.
3. Refer to the command read and write mode in mode selection table (P.4).
4. SA(1)=Sector address (SA0 - SA7), SA(2)=Sector address (SA8 - SA13).
5. CA(1)=Column address (CA0 - CA7), CA(2)=Column address (CA8 - CA11).(0≤CA11 - CA0≤83FH)
6. The variable h is the input number of times of set of CA(1) and CA(2).(1≤h≤2048+64)
Set of CA(1) and CA(2) can be input not only one time but free times.
7. By using program(1) and (3), data can additionally be programmed for each sector before erase.
8. ID=Identifier code; Manufacturer code (1CH), Device code (6CH).
9. The manufacturer identifier code is output when
is low and the device identifier code is output when
is high.
10. Before program (2) operations, data in the programmed sector must be erased.
11. No commands can be written during auto program and erase (when the R/ pin outputs a VOL).
12. The fourth cycle or sixth cycle of the auto program comes after the program data input is complete.
5
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Mode Description
Read
Serial read(1)
Memory data D0-D2111 in the sector of address SA is sequentially read. Output data is not valid after the number of the
serial clock SC pulse exceeds 2112. When the column address CA is input after SA, memory data D(m) -D(m+j) in the sector
of address SA is sequentially read. Then output data is not valid after the number of the SC pulse exceeds (2112-m).
The mode turns back to the Standby mode at any time when
is VIH.
Serial read(2)
Memory data D2048-D2111 in the sector of address SA is sequentially read. Output data is not valid after the number of the
SC pulse exceeds 64.The mode turns back to the Standby mode at any time when
is VIH.
Automatic Erase
Single sector Erase
Memory data D0-D2111 in the sector of address SA is erased automatically by internal control circuits. After the sector
erase starts, the erasure completion can be checked through the R/ signal and status data polling. All the bits in the sector
are “1” after the erase. The sector valid data stored in a part of memory data D2048-D2111 must be read and kept outside of
the sector before the sector erase.
Automatic program
Program(1)
Program data PD0-PD2111 is programmed into the sector of address SA automatically by internal control circuits. When
CA is input after SA, program data PD(m) -PD(m+j) is programmed form CA into the sector of address SA automatically by
internal control circuits. By using program(1), data can additionally be programmed for each sector before the following erase.
When the column is programmed, the data of the column must be [FF].
After the programming starts, the program completion can be checked through the R/ signal and status data polling.
Programmed bits in the sector turn from “1” to “0” when they are programmed. The sector valid data should be included in the
program data PD2048-PD2111. In this mode, E/W number of times must be counted whenever program(1) execute.
Program(2)
Program data PD0-PD2111 is programmed into the sector of address SA automatically by internal control circuits. After the
programming starts, the program completion can be checked through the R/ signal and status data polling. Programmed bits
in the sector turn from “1” to “0” when they are programmed. The sector must be erased before programming. The sector valid
data should be included in the program data PD2048-PD2111. In this mode, Write number of times must be counted whenever
program(2) execute.
Program(3)
Program data PD2048-PD2111 is programmed into the sector of address SA automatically by internal control circuits. By
using program(3), data can additionally be programmed for each sector before the following erase. When the column is
programmed, the data of the column must be [FF].
After the programming starts, the program completion can be checked through the R/ signal and status data polling.
Programmed bits in the sector turn from “1” to “0” when they programmed. In this mode, E/W number of times must be counted
whenever program(3) execute.
Program(4)
Program data PD0-PD2111 is programmed into the sector of address SA automatically by internal control circuits. When CA
is input after SA, program data PD(m) -PD(m+j) is programmed from CA into the sector of address SA automatically by internal
control circuits. By using program(4), data can be rewritten for each sector before the following erase. So the column data
before programming operation are either “1” to “0”.
After the programming starts,the program completion can be checked through the R/ single and status data polling. The
sector valid data should be included in the program data PD2048-PD2111. In this mode, E/W number of times must be counted
whenever program(4) execute.
6
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
16383
Sector
Address
16383
16383
Sector
Address
Sector
Address
Memory Array
0
Memory Array
Memory Array
0
0
0
Register
2111
Serial read(1), (Without CA)
Program(1), (Without CA)
Program(2)
Program(4), (Without CA)
0
Column
address
Register
Serial read(1), (With CA)
Program(1), (With CA)
Program(4), (With CA)
2111
2048
0
Register
2111
Serial read(2)
Program(3)
Status Register Read
The status returns to the register read mode from Standby mode ,when
and
is VIL. In the status register read
mode, DQ pins output the same operation status as in the status data polling defined in the function description, table 1
(page 34).
Identifier Read
The manufacturer and device identifier code can be read in the identifier read mode. The manufacturer and device
identifier code is selected with
VIL and VIH, respectively.
Data Recovery Read
When programming was error, the program data can be read. When additional programming (Program(1),(3),(4))was error,
the data compounded of the program data and the original data in the sector of address SA can be read. Output data is not
valid after the number of SA pulse exceeds 2112. The mode turns back to the Standby mode at any time when
is VIH.
(See timing waveform in page 31)
Data Recovery Write
When programming into a sector of address SA was an error,the program data can be re-written automatically by selecting
the other sector SA'.In this Case,top address [SA13] of sector of address SA' must be the same as SA.Since the data
recovery write mode utilizes program(4),rewritten sector of address SA' needs no sector erase before rewritten.After the data
recovery write mode starts,the program completion can be checked through R/ signal and the status data polling.
7
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Command / Address / Data Input Sequence
8
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Command / Address / Data Input Sequence
9
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Command / Address / Data Input Sequence
10
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Status Transition
Deep
Standby
Vcc
Column address
input
Power off
CA(1)
CA(2)
00H / F0H
SA(1), SA(2)
Read (1), (2)
setup
CA(1)',CA(2)'
Sector address
input
, SC
SC
Read(1), (2)
FFH
90H
,
ID Read set up
ID Read
FFH
BUSY
20H
SA(1), SA(2)
Sector Erase
set up
B0H
Sector address
input
Erase start
Status
register
read
FFH
Erase finish
Column address
input
CA(1)
CA(2)
Standby
Output
disable
10H/
11H
Program (1),(4)
set up
SA(1)
SA(2)
CA(1)',CA(2)'
Sector address
input
PD0 ~ PD2111
SC,
SC,
PD(m)~
PD(m+j)
Program data
input
40H
Program
start
Status
register
read
Program data
input
40H
Program
start
Status
register
read
FFH
Program finish
1FH/
0FH
SA(1)
Program (2),(3) SA(2)
set up
(note4) PD0 ~ PD2111
Sector address
input
SC,
FFH
Program finish
Program or
Erase Error
Status register clear 50H
(note2)
(note2) FFH
ERROR
(note1)
01H
Status
register
read
Error
Standby
(note3)
Error
Output
disable
Data
Recovery Read
set up
,SC
Data
Recovery Read
Status register read
40H
(note1)
12H
Data
Recovery Write
set up
SA(1)
SA(2)
Sector address
input
FFH
Note 1: (01H)/(12H) Data Recovery Read/Write can be used only for Program(1),(2),(3),(4) Errors.
2: When Reset is done by CE or FFH, Error Status Flag is cleared.
3: When Error Standby, Icc3 level is current.
4: When Program(3) mode, input data is PD2048 ~ PD2111.
11
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Absolute Maximum Ratings
Symbol
VIN, VOUT
Vcc
Topr
Tstg
Tbias
Test conditions
Parameter
All input and output voltages
Vcc voltage
Operating temperature range
Storage temperature range 2)
Storage temperature under bias
Unit
V
V
Ratings
-0.6 to +7 1)
-0.6 to +7
0 to +70
-65 to +125
-10 to +80
With respect to GND
°C
°C
°C
Notes : 1. VIN , VOUT = -2.0V for pulse width ≤ 20ns
2. Device storage temperature range before programming.
Capacitance (Ta = 25°C , f = 1MHz)
Symbol
Cin
Cout
Parameter
Input capacitance
Output capacitance
Test conditions
Min
Limits
Typ
Max
-
-
6
12
Ta = 25°C, f = 1MHz, VIN = VOUT = 0V
Unit
pF
pF
Read Operation
DC Characteristics
Symbol
ILI
ILO
( Vcc = 3.0V to 3.6V , Ta = 0 to +70°C)
Parameter
Test conditions
GND ≤ VIN ≤ VCC
GND ≤ VOUT ≤ VCC
Input leakage current
Output leakage current
ISB1
ISB2
ISB3
ICC1
ICC2
VIL
VIH
VILR
VIHR
VOL
VOH
Deep Standby Vcc current
Operating Vcc current
Input low voltage
Input high voltage
Input low voltage(
Input high voltage(
Output low voltage
Output high voltage
Min
-
Typ
-
Unit
Max
2
2
µA
µA
-
0.3
1
mA
30
50
µA
= GND ± 0.2V
-
1
10
µA
IOUT = 0mA, f = 0.2MHz
IOUT = 0mA, f = 20MHz
-0.3
25
50
mA
mA
2.0
-0.2
VCC - 0.2
-
20
30
-
2.4
-
= VIH
= VCC ± 0.2V
= VCC ± 0.2V
Standby Vcc current
Limits
pin)
pin)
IOL = 2mA
IOH = -2mA
1)
0.8
VCC + 0.3
0.2
2)
VCC + 0.2
0.4
-
Notes : 1. VILmin = -1.0V for pulse width ≤ 50ns. VILmin = -2.0V for pulse width ≤ 20ns.
2. VIHmax = Vcc + 1.5V for pulse width ≤ 20ns. If VIH is over the specified maximum value,
the read operations are not guaranteed.
12
Rev.2.3.1
2001.2.2
V
V
V
V
V
V
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
AC Characteristics (for power on and off, serial read) (Vcc =3.0 to 3.6V, Ta = 0 to +70°C)
Test Conditions
• Input pulse levels : 0.4V/2.4V
• Input pulse levels for RES : 0.2V/Vcc-0.2V
• Input rise and fall times : ≤ 5ns
• Output load : 1 TTL gate + 100pF
(Including scope and jig.)
• Reference levels for measuring timing : 0.8V, 1.8V
Symbol
tCWC
tSCC
tCES
tCEH
tWP
tWPH
tAS
tAH
tDS
tDH
tSAC
tOES
tOEL
tOER
tOEWS
tSH
tDF 1)
tWSD
tRP
tSOH
tSP
tSPL
tSCS
tCDS
tCDH
tVRS
tVRH
tCESR
tDFP
tBSY
tCPH
tCWRS
tCWRH
tSW
tCOH
tSCD
tRS
tDBR
tRBSY
2)
Parameter
Write cycle time
Serial clock cycle time
setup time
hold time
Write pulse time
Write pulse high time
Address setup time
Address hold time
Data setup time
Data hold time
SC to output delay
setup time for SC
low to output low-z
setup time before read
setup time before command write
SC to output hold
hight to output float
to SC delay time
to
setup time
SC to
hold time
SC pulse width
SC pulse low time
SC setup time for
setup time for
hold time for
Vcc setup time for
to Vcc hold time
setup time for
R/ undefined for Vcc off
high to device ready
pulse high time
,
setup time for
to
,
hold time
SC setup for
hold time for
SA(2)to CA(2)delay time
R/ setup time for SC
Time to device Busy on Read mode
Busy time on Read mode
Test conditions
= VIL,
=
= VIH
= VIL,
= VIH
=
= VIL,
= VIH
= VIL,
= VIH
= VIH
= VIH
Min
120
50
0
0
60
40
50
10
50
10
0
0
250
0
15
50
1
50
20
20
0
0
20
Limits
Typ
-
0
0
50
0
200
-
Max
50
40
40
1
30
-
-
45
1
-
1
1
1
0
200
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ms
ns
ns
ns
ns
ns
ns
µs
µs
µs
ns
ms
ns
ns
ns
ns
ns
µs
ns
µs
µs
Notes : 1. tDF is a time after which the DQ pins become open.
2. tWSD(min) is specified as a reference point only for SC, if tWSD is greater than the specified tWSD(min)
limit, then access time is controlled exclusively by tSAC.
13
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Power on and off Sequence
VCC
tVRS
tRP
tCES
tCEH
tCESR
tRP
(note1)
(note2)
tCESR
tDFP
(note1)
tBSY
tBSY
HighZ
R/
tCEH
tCWRH
tVRH
tCWRS
Undefined
tCES
Ready
Undefined
note1 :
must be kept at the VILR level as shown in page 12 at the rising and falling edges of Vcc to
guarantee data stored in the chip.
note2 :
must be kept at the VIHR level specified in page 12 while DQ7 outputs the VOL level in the
status data polling and R/ outputs the VOL level.
14
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Serial Read (1)/(2) Timing Waveforms
tCOH
(note1)
tCPH
tCES
tCWC
tOEWS
tCEH
tCWC
tWPH
tWP tCDH
tOER
tWPH
tWP
tWP
tWP tCDH
tOES
tCDS
tWSD
tCDS
tSCC
tSCC
(note2)
tSOH
tCDS
SC
tSCS
tDS tDH
tAS
tAH
tSP tSPL
tAS tAH tOEL tSAC
tSAC
tSH
tSAC
tSAC
tDF
tDS tDH
(note3)
tSH
DQ0-7
tRP
00H/
F0H
SA(1)
SA(2)
D0out/
D1out/
D2048out D2049out
D2111out/ (note2)
D2111out
FFH
tRS
tDBR
HighZ
R/
tRBSY
Note 1. The status returns to the Standby at the rising edge of
.
2. Output data is not valid after the number of the SC pulse exceed 2112 and 64 in the serial read mode
(1) and (2), respectively.
3. The status can return to the Ready after the command FFH is input.
15
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
~
~ ~
~
16
~
~
~
~
~
~
~
~
~ ~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~ ~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~ ~
~
~
~
~
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
~
~
~
~
~
~
~
~
~ ~
~
~
~
~
~
~
~
~ ~
~
~
~
~
~
~
~
~ ~
~
~
~
~
~
~
~
~
~
~
~
~
~
~
~ ~
~
~
~
~
~
~ ~
~
17
~
~
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Erase and Programming Operations
DC Characteristics
Symbol
ILI
ILO
ISB1
ISB2
(Vcc = 3.0V to 3.6V , Ta = 0 to +70°C )
Parameter
Input leakage current
Output leakage current
Standby Vcc current
ISB3
Deep Standby Vcc current
ICC3
ICC4
VIL
VIH
VOL
Operating Vcc current
VOH
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Test conditions
GND ≤ VIN ≤ VCC
GND ≤ VOUT ≤ VCC
= VIH
= VCC ± 0.2V
= VCC ± 0.2V
= GND ± 0.2V
In programming
In erase
IOL = 2mA
IOH = -2mA
Limits
Typ
0.3
Max
2
2
1
-
30
50
µA
-
1
10
µA
Min
-
-0.3
2.0
2.4
1)
20
20
-
40
40
0.8
VCC + 0.3
-
0.4
-
-
Unit
µA
µA
mA
2)
mA
mA
V
V
V
V
Notes : 1. VILmin = -0.6V for pulse width ≤ 20ns.
2. If VIH is over the specified maximum value, the Erase and Programming operations are not guaranteed.
18
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
AC Characteristics (for Erase,program,ID read,status register read , data recovery read and data recovery write.)
(Vcc =3.0V to 3.6V, Ta = 0 to +70°C)
Test Conditions
• Input pulse levels : 0.4V/2.4V
• Input pulse levels for RES : 0.2V/Vcc - 0.2V
• Input rise and fall times : ≤ 5ns
• Output load : 1 TTL gate + 100pF
(Including scope and jig.)
• Reference levels for measuring timing : 0.8V, 1.8V
Symbol
tCWC
tSCC
tCES
tCEH
tWP
tWPH
tAS
tAH
tDS
tDH
tOEWS
tOEPS
tOER
tDB
tDBR
tASE
tASP(1)
tASP(2)
tASP(3)
tASP(4)
tASRW
tWSD
tRBSY
tWSDR
tCPH
tSP
tSPL
tSDS
tSDH
tSW
tSCS
tSCHW
tCE
tOE
tDF 1)
tRP
Parameter
Write cycle time
Serial clock cycle time
setup time
hold time
Write pulse width
Write pulse high time
Address setup time
Address hold time
Data setup time
Data hold time
setup time before command write
setup time before status polling
setup time before read
Time to device busy
Time to device busy on Read Mode
Auto erase time
Auto program time (1)
Auto program time (2)
Auto program time (3)
Auto program time (4)
Data Recovery Write time
to SC delay time
Busy Time on Read Mode
to SC delay time on Recovery Read Mode
pulse high time
SC pulse width
SC pulse low time
Data setup time for SC
Data hold time for SC
SC setup for
SC setup for
SC hold time for
to output delay
to output delay
high to output float
to
setup time
Test condition
= VIL
Min
120
50
0
0
60
40
50
10
50
10
0
40
Limits
Typ
-
Max
-
250
-
1.0
3.0
150
1
10
40
ns
ns
µs
ms
ms
-
2.5
3.0
3.5
40
40
40
ms
ms
ms
50
2
200
20
20
0
3.5
45
-
40
-
ms
µs
µs
µs
-
120
60
40
-
ns
us
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
30
50
0
20
1
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes : 1. tDF is a time after which the DQ pins become open.
19
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
AC Characteristics (for Erase,program,ID read,status register read , data recovery read and data recovery write.)
(Vcc =3.0V to 3.6V, Ta = 0 to +70°C)
Test Conditions
• Input pulse levels : 0.4V/2.4V
• Input pulse levels for RES : 0.2V/Vcc - 0.2V
• Input rise and fall times : ≤ 5ns
• Output load : 1 TTL gate + 100pF
(Including scope and jig.)
• Reference levels for measuring timing : 0.8V, 1.8V
Symbol
tCDS
tCDH
tCDSS
tCDSH
tRDY
tCDOH
tCDAC
tCDF
tCOS
tCOH
tCDOS
tOES
tOEL
tSAC
tSH
tRS
tCWH
tCWHR
tWWH
20
parameter
setup time for
hold time for
setup time for SC
hold time for SC
Next cycle ready time
to
hold time
to output delay
to output invalid
setup time for
hold time for
to
setup time
setup time for SC
low to output low-z
SC to output delay
SC to output hold
R/ setup for SC
hold time for
hold time for
on Recovery Read Mode
hold time for
Test condition
Min
0
20
1.5
30
0
50
0
0
0
20
0
0
15
200
1
2
1
Limits
Typ
-
Rev.2.3.1
Max
50
100
40
50
-
Unit
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Erase and Status Data Polling Timing Waveforms (Sector Erase)
tCOS
tCEH
tCES
tCE
tOE
tCWC
tOEWS
tCWC
tWPH
tCWC
tWPH
tOEPS
tWPH
tASE
tRDY
tCDS
tWP tCDH tWP
tCDS
tWP
tCDS
tCDS tWP
tCDH
tSCHW
tCDH
SC
tSCS
tDS
tDH
tAS
tAH
tAS
tAH
tDS tDH
tDF
tDF
DQ0-7
20H
SA(1)
SA(2)
B0H
DQ7=VOL
DQ7=VOH
tDB
tRP
R/
(note2)
HighZ
HighZ
(note1)
Note : 1. Any commands, including reset command FFH, cannot be input while R/ outputs a VOL.
2. The status returns to the Standby or the Output disable after R/ returns to HighZ.
21
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Program(1) and Status Data Polling Timing Waveforms
tCOS
tCES
tCEH
tCWC
tOEWS
tCE
tCWC
tWPH
tOE
tOEPS
tWPH
tRDY
tCDS
tWP tCDS tWP
tWP
tCDSS
tASP(1)
tWP
tSW
tCDS
tCDH
tSCC
tSPL
tCDH
tCDH
tSCHW
(note1)
SC
tSCS
tDS
tDH tAS tAH tAS tAHtSDS
tSDH tSP
tSP
tDS
tDH
tDF
tDF
DQ0-7
10H
tRP
R/
SA(1)
SA(2)
PD0
HighZ
PD1
PD2111
40H
DQ7=VOL
DQ7=VOH
(note3)
HighZ
tDB
(note2)
Notes : 1. The programming operation is not guaranteed when the number of the SC pulse exceeds 2112.
2. Any commands, including reset command FFH, cannot be input while R/ is VOL.
3. The status returns to the Standby or the Output disable after R/ returns to HighZ.
4. By using program(1), data can be programmed additionally for each sector before erase.
22
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
23
~
~ ~
~
~
~
~
~
~
~
~
~ ~
~
~
~
~
~
~
~ ~
~
~
~
~
~
~
~
~
~
~ ~
~
~
~
~
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
24
~ ~
~
~
~
~
~ ~
~
~
~ ~
~
~
~
~ ~
~
~
~
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Program(2) and Status Data Polling Timing Waveforms
tCOS
tCES
tCEH
tCWC
tOEWS
tCE
tCWC
tWPH
tWP tCDS tWP
tOE
tOEPS
tWPH
tCDSS
tWP
tRDY
tASP(2)
tWP
tCDS
tSW
tCDS
tCDH
tSCC
tSPL
tCDH
tCDH
tSCHW
(note1)
SC
tSCS
tDS
tDH tAS tAH tAS tAHtSDS
tSDH tSP
tSP
tDS
tDH
tDF
tDF
DQ0-7
1FH
tRP
R/
SA(1)
SA(2)
PD0
HighZ
PD1
PD2111
40H
DQ7=VOL
DQ7=VOH
(note3)
HighZ
tDB
(note2)
Notes : 1. The programming operation is not guaranteed when the number of the SC pulse exceeds 2112.
2. Any commands, including reset command FFH, cannot be input while R/ is VOL.
3. The status returns to the Standby or the Output disable after R/ returns to HighZ.
4. By using program(2), the programmed data of each sector must be erased before programming next data.
25
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Program(3) and Status Data Polling Timing Waveforms
tCOS
tCES
tCEH
tCWC
tCWC
tOEWS
tCE
tWPH
tWP tCDS tWP
tCDS
tOE
tOEPS
tWP
tASP(3)
tSW tWP
tCDSS
tCDH
tCDH
tSCC
tSPL
tDH tAS tAH tAS
tAH
tSDS
tSDH tSP
tRDY
tCDS
tCDH
(note1)
tSCHW
SC
tSCS
tDS
tSP
tDS
tDH
tDF
tDF
DQ0-7
0FH
tRP
R/
SA(1)
SA(2) PD2048 PD2049 PD2111 40H
HighZ
DQ7=VOL
DQ7=VOH
(note3)
HighZ
tDB
(note2)
Notes : 1. The programming operation is not guaranteed when the number of the SC pulse exceeds 64.
2. Any commands, including reset command FFH, cannot be input while R/ is VOL.
3. The status returns to the Standby or the Output disable after R/ returns to HighZ.
4. By using program(3), data can be programmed additionally for each sector before erase.
26
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Program(4) and Status Data Polling Timing Waveforms
tCOS
tCES
tCEH
tCWC
tOEWS
tCE
tCWC
tWPH
tWP tCDS tWP
tOE
tOEPS
tWPH
tWP
tCDSS
tRDY
tASP (4)
tWP
tCDS
tSW
tCDS
tCDH
tCDH
tWSD
tSCC
tSPL
tCDH
tSCHW
(note1)
SC
tSCS
tDS
tDH tAS tAH tAS tAHtSDS
tSDH tSP
tSP
tDS
tDH
tDF
tDF
DQ0-7
11H
SA(1)
SA(2)
tDBR
PD0
PD1
tRS
tRP
HighZ
R/
PD2111
40H
DQ7=VOL
DQ7=VOH
(note3)
HighZ
tDB
(note2)
tRBSY
Notes : 1. The programming operation is not guaranteed when the number of the SC pulse exceeds 2112.
2. Any commands, including reset command FFH, cannot be input while R/ is VOL.
3. The status returns to the Standby or the Output disable after R/ returns to HighZ.
4. By using program(4), data can be rewritten for each sector.
27
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
28
~ ~
~
~
~
~ ~
~
~
~ ~
~
~
~
~
~ ~
~
~
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
29
~ ~
~
~
~
~ ~
~
~
~ ~
~
~
~
~ ~
~
~
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
ID and Status Register Read Timing Waveforms
tCOH
(note1)
tCOH
tCOS
(note1)
tCES
tOEPS
tOEWS
tCDOH
tWP
tCDS
tCDH
tSCHW
SC
tCDAC
tSCS
tDS tDH
tCDAC
tSCS
tDF
tOE
tCDF
tOE
tDF
tCDF
DQ0-7
90H
tRP
Manufacturer Device Manufacturer
Code Code
Code
Status
Register
HighZ
R/
Note : 1. The status returns to the Standby at the rising edge of
30
.
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Data Recovery Read Timing Waveforms
tCOH
(note1)
tCES
tCPH
tCWHR
tOEWS
tCEH
tOER
tCDOS
tWP tCDH
tWP tCDH
tOES
tWSDR
tCDS
tSCC
tSCC
(note2)
tSOH
tCDS
SC
tSCS
tDS tDH
tSP tSPL
tSAC
tSAC
tOEL tSAC
tSH
tSH
tSAC
tDF
tDS
tDH
(note3)
DQ0-7
tRP
01H
D0out
D1out
D2111out (note2)
FFH
HighZ
R/
Note 1. The status returns to the Standby at the rising edge of
.
2. Output data is not valid after the number of the SC pulse exceeds 2112 and 64 in the Data Recovery Read mode.
3. The status can return to the Ready after the command FFH is input.
31
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Data Recovery Write and Status Data Polling Timing Waveforms
tCOS
tCEH
tCES
tCE
tOE
tCWC
tOEWS
tCWC
tWPH
tCWC
tWPH
tOEPS
tWPH
tASP(4)
tRDY
tCDS
tWP tCDH tWP
tCDS
tWP
tCDS
tCDS tWP
tCDH
tSCHW
tCDH
SC
tSCS
tDS
tDH
tAS
tAH
tAS
tAH
tDS tDH
tDF
tDF
DQ0-7
12H
SA(1)
SA(2)
40H
DQ7=VOL
DQ7=VOH
tDB
tRP
R/
(note2)
HighZ
HighZ
(note1)
Note : 1. Any commands, including reset command FFH, cannot be input while R/ outputs a VOL.
2. The status returns to the Standby or the Output disable after R/ returns to HighZ.
32
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
33
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Function Description
Status Register
The M5M29F25611 outputs the operation status data as follows: DQ7 pin outputs a VOL to indicate that
the memory is in either erase or program operation. The level of DQ7 pin turns to a VOH when the operation
finishes. DQ5 and DQ4 pins output VOLs to indicate that the erase and program operations are successfully completed
or not, respectively. If these pins output VOHs, it indicates that these operations have timed out. When these pins
are monitored, DQ7 pin must turn to a VOH. To execute other erase and program operation, the status data must
be cleared after a time out occurs. From DQ0 to DQ3 and DQ6 pins are reserved for future use. The pins output
VOLs and should be masked out during the status data read mode.
The function of the status register is summarized in the following table.
Table 1.
Flag Definition
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
34
Ready/Busy
Reserved
Erase Check
Program Check
Reserved
Reserved
Reserved
Reserved
Definition
"VOH" = Ready "VOL" = Busy
Outputs a VOL and should be masked out during the status data polling mode.
"VOH" = Fail
"VOL" = Pass
"VOH" = Fail
"VOL" = Pass
Outputs a VOL and should be masked out during the status data polling
mode.
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Notes
Unusable Sector
Initially, the M5M29F25611 contains unusable sectors.Due to the nature of the device architecture, the device
can also be screened and tested for partial invalid sectors for selected systems that can utilize the devices.
1. Tested for partial invalid sectors. The usable sectors were programmed the following data.
Column address
820H
821H
822H
823H
824H
825H
Data
1CH
71H
C7H
1CH
71H
C7H
2. No erase and program for the partial invalid sectors by the system.
Item
Min
16,057 (98%)
Usable sectors (initially)
Enable High System Reliability
The device may fail during a program or erase operation due to program or erase cycle. The following
architecture will enable high system reliability if a failure occurs.
1. Error in read : Error correction that more than 3 bit error correction per each sector read is required for
data reliability.
2. Error in program or erase operation : The device may fail during a program or erase operation due to
program or erase cycle. The status register indicates that the program and erase operations are successfully
completed or not. After every program and erase operations, read status register to confirm
the program and erase operations are successfully completed.
When the error happens in sector, try to reprogram the data into another sector. Then, prevent further
system access to sector that error happens. Typically, recommended number of a spare sectors are 1.8%
within initial usable 16,057 sectors by each device.If the number of failed sectors exceed the number of the
spare sectors,usable data area in the device decreases.In the case of reprogramming to the spare sector ,do
not use the data from the failed sector.The reprogram data must be the data reloaded from outer buffer,or
use the Data recovery read mode or the Data recovery write mode(see the "Mode Description").To avoid
consecutive sector failurechoose addresses of spare sectors as far as possible from the failed sectors.
5
3. The write/erase endurance is 1 x 10 cycles.
35
Rev.2.3.1
2001.2.2
MITSUBISHI LSIs
M5M29F25611VP
MORE THAN 16,057 SECTORS (271,299,072 BITS)
CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as
(i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Notes regarding these materials
These materials are intended as a reference to assist our customers in the selection of the
Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any
license under any intellectual property rights , or any other rights, belonging to Mitsubishi Electric
Corporation or a third party.
Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms,
or circuit application examples contained in these materials.
All information contained in these materials, including product data, diagrams, charts, programs
and algorithms represents information on products at the time of publication of these materials, and
are subject to change by Mitsubishi Electric Corporation without notice due to product improvements
or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation
or an authorized Mitsubishi Semiconductor product distributor for the latest product information before
purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com).
When using any or all of the information contained in these materials, including product data,
diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system
before making a final decision on the applicability of the information and products. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in
whole or in part these materials.
If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country
of destination is prohibited.
Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product
distributor for further details on these materials or the products contained therein.
36
Rev.2.3.1
2001.2.2