PD - 90372A IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) IRF440 500V 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. TO-3 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS =0V, TC = 25°C ID @ VGS = 0V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 8.0 5.0 32 125 1.0 ±20 700 8.0 3.5 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063 in. (1.6mm) from case for 10s) 11.5(typical) C g For footnotes refer to the last page www.irf.com 1 4/20/01 IRF440 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) RDS(on) VGS(th) gfs IDSS IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Ciss Coss Crss Parameter Min Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.0mA — 0.78 — V/°C Reference to 25°C, ID = 1.0mA — — 2.0 4.7 — — — — — — — — 0.85 0.98 4.0 — 25 250 Ω — — 27.3 2.0 11 — — — — — — — — — — — — — — 6.1 100 -100 68.5 12.5 42 21 73 72 51 — nC VGS = 10V, ID = 5.0A➃ VGS = 10V, ID =8.0A ➃ V DS = VGS, ID =250µA VDS > 15V, IDS = 5.0A ➃ VDS=400V, VGS=0V VDS = 400V VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =10V, ID=8.0A VDS = 250V ns VDD =250V, ID =8.0A, RG =9.1Ω — — — 1300 310 120 — — Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Typ Max Units V S( ) Ω BVDSS ∆BVDSS/∆TJ µA nA nH Test Conditions Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ — — — — 8.0 32 A VSD t rr QRR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — 1.5 700 8.9 V nS µC t on Forward Turn-On Time Test Conditions Tj = 25°C, IS = 8.0A, VGS = 0V ➃ Tj = 25°C, IF = 8.0A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction to Case Junction to Ambient Min Typ Max Units — — — — 1.0 30 °C/W Test Conditions Typical socket mount For footnotes refer to the last page 2 www.irf.com IRF440 Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF440 13 a& b 4 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRF440 V DS VGS RD D.U.T. RG + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF440 1 5V L VD S D .U .T RG IA S VGS 20V D R IV E R + V - DD A 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 10V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF440 Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 50V, starting TJ = 25°C, Peak IL = 8.0A, ➂ ISD ≤ 8.0, di/dt ≤ 100A/µs, VDD≤ 500V, TJ ≤ 150°C Suggested RG =9.1 Ω ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions —TO-204AA (Modified TO-3) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/01 www.irf.com 7