BLX14 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLX14 is Designed for HF and VHF band applications. PACKAGE STYLE .500 4L STUD (A) .112 x 45° FEATURES: A Ø .630 NOM C • PG = 13 dB min. at 15 W/1.6 MHz • d3 = -40 dB typ. at 15 W (PEP) • Omnigold™ Metalization System B C E E B D E G F 1/4-28 UNF-2A MAXIMUM RATINGS IC 4.0 A VCBO 85 V VEBO 4.0 V H DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM VCEO 36 V B C .545 / 13.84 .555 / 14.10 PDISS 88 W @ TC = 25 °C D .495 / 12.57 .505 / 12.83 E .003 / 0.08 -65 °C to +200 °C F TJ TSTG -65 °C to +200 °C θJC 1.99 °C/W CHARACTERISTICS BVCBO IC = 25 mA BVCER IC = 25 mA BVCEO .007 / 0.18 .830 / 21.08 G .185 / 4.70 .198 / 5.03 H .497 / 12.62 .530 / 13.46 TC = 25 °C NONETEST CONDITIONS SYMBOL 1.050 / 26.67 MINIMUM TYPICAL MAXIMUM UNITS 85 V 85 V IC = 50 mA 36 V BVEBO IE = 10 mA 4.0 V hFE VCE = 6.0 V IC = 1.4 A fT VCE = 20 V IC = 3.0 A CC VCB = 30 V GP d3 RBE = 5.0 Ω 15 100 250 f = 1.0 MHz 115 13 VCE = 28 V f = 1.6 MHz ICQ =2.0 A POUT = 15 W (PEP) -40 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. --MHz 125 pF dB dB REV. A 1/1