BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable FEATURES BS616LV1622 • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin • Wide Vcc operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 45mA (@55ns) operating current I -grade: 46mA (@55ns) operating current C-grade: 36mA (@70ns) operating current I -grade: 37mA (@70ns) operating current 3.0uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 113mA (@55ns) operating current I -grade: 115mA (@55ns) operating current C-grade: 90mA (@70ns) operating current I -grade: 92mA (@70ns) operating current 15uA (Typ.) CMOS standby current • High speed access time : -55 55ns -70 70ns • Automatic power down when chip is deselected • Three state outputs and TTL compatible DESCRIPTION The BS616LV1622 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 3.0uA at 3V/25oC and maximum access time of 55ns at 3.0V/85oC . This device provide three control inputs and three states output drivers for easy memory expansion. The BS616LV1622 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1622 is available in 48-pin 12mmx20mm TSOP1 package. PRODUCT FAMILY PRODUCT FAMILY OPERATING TEMPERATURE Vcc RANGE SPEED (ns) 55ns : 3.0~5.5V 70ns : 2.7~5.5V POWER DISSIPATION STANDBY Operating (ICCSB1, Max) PKG TYPE (ICC, Max) Vcc=3V Vcc=5V Vcc=3V Vcc=5V 70ns 70ns BS616LV1622TC +0 O C to +70 O C 2.4V ~ 5.5V 55 / 70 10uA 110uA 36mA 90mA TSOP1-48(12mmx20mm) BS616LV1622TI -40 O C to +85 O C 2.4V ~ 5.5V 55 / 70 20uA 220uA 37mA 92mA TSOP1-48(12mmx20mm) BLOCK DIAGRAM PIN CONFIGURATIONS A4 A3 A2 A1 A0 /CE1 D0 D1 D2 D3 Vcc CIO Vss D4 D5 D6 D7 A19 /WE A18 A17 A16 A15 A14 1 48 47 46 9 10 13 BS616LV1622TC BS616LV1622T I 37 16 17 27 24 25 A19 A15 A14 A13 A5 A6 A7 /OE /UB /LB CE2 SAE D15 D14 D13 D12 Vss Vcc D11 D10 D9 D8 A8 A9 A10 A11 A12 A13 A12 Address A11 A10 A9 A8 A17 A7 A6 Input Buffer 24 4096 Row Memory Array Decoder 4096 x 4096 4096 16(8) D0 . . . . . . . . Data Input Buffer 16(8) Column I/O Write Driver Sense Amp 16(8) 16(8) 256(512) Data Output Buffer D15 Column Decoder CE1 CE2 WE OE UB LB CIO 48-pin 12mmx20mm TSOP1 top view 16(18) Control Address Input Buffer A16 A0 A1 A2 A3 A4 A5 A18 (SAE) Vdd Vss Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice. R0201-BS616LV1622 1 Revision 2.1 Jan. 2004 BSI BS616LV1622 PIN DESCRIPTIONS Name Function A0-A19 Address Input These 20 address inputs select one of the 1,048,576 x 16-bit words in the RAM. SAE Address Input This address input incorporates with the above 20 address inputs select one of the 2,097,152 x 8-bit bytes in the RAM if the CIO is LOW. Don't use when CIO is HIGH. CIO x8/x16 select input This input selects the organization of the SRAM. 1,048,576 x 16-bit words configuration is selected if CIO is HIGH. 2,097,152 x 8-bit bytes configuration is selected if CIO is LOW. CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when data read from or write to the device. If either chip enable is not active, the device is deselected and is in a standby power mode. The DQ pins will be in the high impedance state when the device is deselected. WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the chip selected, when WE is HIGH and OE is LOW, output data will be present on the DQ pins; when WE is LOW, the data present on the DQ pins will be written into the selected memory location. OE Output Enable Input The output enable input is active LOW. If the output enable is active while the chip is selected and the write enable is inactive, data will be present on the DQ pins and they will be enabled. The DQ pins will be in the high impedance state when OE is inactive. LB and UB Data Byte Control Input Lower byte and upper byte data input/output control pins. The chip is deselected when both LB and UB pins are HIGH. D0 - D15 Data Input/Output Ports These 16 bi-directional ports are used to read data from or write data into the RAM. Vcc Power Supply Gnd Ground R0201-BS616LV1622 2 Revision 2.1 Jan. 2004 BSI BS616LV1622 TRUTH TABLE MODE CE1 CE2 H X Fully Standby Output Disable Read from SRAM ( WORD mode ) Write to SRAM ( WORD mode ) X L L H L L OE WE CIO X X X H H L H X H X H H L H LB UB SAE D0~7 D8~15 VCC Current X X X X X High-Z High-Z ICCSB, ICCSB1 X X X High-Z High-Z ICC L H Dout High-Z H L High-Z Dout L L Dout Dout L H Din X H L X Din L L Din Din X X ICC ICC Read from SRAM ( BYTE Mode ) L H L H L X X A-1 Dout High-Z ICC Write to SRAM ( BYTE Mode ) L H X L L X X A-1 Din X ICC ABSOLUTE MAXIMUM RATINGS(1) SYMBOL V TERM T BIAS PARAMETER Terminal Voltage Respect to GND with Temperature Under Bias OPERATING RANGE RATING UNITS -0.5 to Vcc+0.5 V -40 to +85 O -60 to +150 O RANGE Commercial C T STG Storage Temperature PT Power Dissipation 1.0 W IOUT DC Output Current 20 mA Industrial C O O 0 C to +70 C O O -40 C to +85 C Vcc 2.4V ~ 5.5V 2.4V ~ 5.5V CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz) 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. R0201-BS616LV1622 AMBIENT TEMPERATURE 3 SYMBOL CIN CDQ PARAMETER Input Capacitance Input/Output Capacitance CONDITIONS MAX. UNIT VIN=0V 10 pF VI/O=0V 12 pF 1. This parameter is guaranteed and not 100% tested. Revision 2.1 Jan. 2004 BSI BS616LV1622 DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC ) PARAMETER NAME PARAMETER VIL Guaranteed Input Low Voltage(3) VIH Guaranteed Input High Voltage(3) IIL Input Leakage Current ILO Output Leakage Current TEST CONDITIONS MIN. TYP. Vcc=3V Vcc=5V Vcc=3V Vcc=5V Vcc = Max, VIN = 0V to Vcc Vcc = Max, CE1 = VIH , or CE2 = V iL , or OE = VIH, VI/O = 0V to Vcc -0.5 -0.5 -- (1) MAX. 2.0 2.2 ---- 0.8 0.8 Vcc+0.3 Vcc+0.3 -- -- 1 uA -- -- 1 uA ----- 0.4 0.4 --- VOL Output Low Voltage Vcc = Max, IOL= 2mA Vcc=3V Vcc=5V VOH Output High Voltage Vcc = Min, IOH= -1mA Vcc=3V Vcc=5V --2.4 2.4 Operating Power Supply Current CE1 = VIL and CE2 = VIH , IDQ = 0mA, F = Fmax(2) 70ns Vcc=3V -- -- 37 70ns Vcc=5V -- -- 92 Standby Current-TTL CE1 = VIH or CE2 = VIL , IDQ = 0mA Vcc=3V -- -- 1.3 Vcc=5V -- -- 2.5 CE1≧ Vcc-0.2V, or CE2≦ 0.2V, or LB and UB ≧ Vcc - 0.2V V IN ≧ Vcc - 0.2V or VIN ≦ 0.2V Vcc=3V -- 3 20 Standby Current-CMOS Vcc=5V -- 15 220 (4) ICC ICCSB (5) ICCSB1 UNITS V V V V mA mA uA 1. Typical characteristics are at TA = 25oC. 2. Fmax = 1/tRC . 3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included. 5.IccsB1 is 10uA/110uA at Vcc=3.0V/5.0V and TA=70oC. 4. Icc_Max. is 46mA(@3.0V) / 115mA(@5.0V) under 55ns operation. R0201-BS616LV1622 4 Revision 2.1 Jan. 2004 BSI BS616LV1622 DATA RETENTION CHARACTERISTICS ( TA = -40oC to +85oC ) MIN. TYP. (1) MAX. UNITS Vcc for Data Retention CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V or LB ≧ Vcc - 0.2V and UB ≧ Vcc - 0.2V VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V 1.5 -- -- V ICCDR Data Retention Current CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V or LB ≧ Vcc - 0.2V and UB ≧ Vcc - 0.2V VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V -- 1.5 5 uA tCDR Chip Deselect to Data Retention Time 0 -- -- ns -- -- ns SYMBOL VDR PARAMETER (3) TEST CONDITIONS See Retention Waveform tR Operation Recovery Time TRC (2) 1. Vcc = 1.5V, TA = + 25OC 2. tRC = Read Cycle Time 3. IccDR(Max.) is 2.5uA at TA=70OC. LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled ) Data Retention Mode Vcc VDR ≧ 1.5V Vcc CE1 Vcc tR t CDR CE1 ≧ Vcc - 0.2V VIH VIH LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled ) Data Retention Mode Vcc VDR ≧ 1.5V Vcc CE2 R0201-BS616LV1622 VIL Vcc tR t CDR CE2 ≦ 0.2V 5 VIL Revision 2.1 Jan. 2004 BSI BS616LV1622 AC TEST CONDITIONS KEY TO SWITCHING WAVEFORMS (Test Load and Input/Output Reference) Input Pulse Levels Vcc / 0V Input Rise and Fall Times 1V/ns WAVEFORM Input and Output Timing Reference Level 0.5Vcc Output Load CL = 30pF+1TTL CL = 100pF+1TTL INPUTS OUTPUTS MUST BE STEADY MUST BE STEADY MAY CHANGE FROM H TO L WILL BE CHANGE FROM H TO L MAY CHANGE FROM L TO H WILL BE CHANGE FROM L TO H , DON T CARE: ANY CHANGE PERMITTED CHANGE : STATE UNKNOWN DOES NOT APPLY CENTER LINE IS HIGH IMPEDANCE ”OFF ”STATE AC ELECTRICAL CHARACTERISTICS ( TA = -40oC to +85oC ) READ CYCLE JEDEC PARAMETER PARAMETER NAME NAME tAVAX tAVQV tELQV tRC tAA t ACS1 tELQV tBA CYCLE TIME : 70ns CYCLE TIME : 55ns DESCRIPTION Vcc = 2.7~5.5V Read Cycle Time Vcc = 3.0~5.5V UNIT MIN. TYP. MAX. MIN. TYP. MAX. 70 -- -- 55 -- -- ns -- -- 70 -- -- 55 ns Chip Select Access Time (CE1) -- -- 70 -- -- 55 ns t ACS2 tBA (1) Chip Select Access Time (CE2) -- -- 70 -- -- 55 ns (LB,UB) -- -- 35 -- -- 30 ns tGLQV tELQX tBE tGLQX tOE tCLZ tBE tOLZ Output Enable to Output Valid -- -- 35 -- -- 30 ns (CE2,CE1) 10 -- -- 10 -- -- ns 5 -- -- 5 -- -- ns Output Enable to Output in Low Z 5 -- -- 5 -- -- ns tEHQZ tBDO tCHZ tBDO Chip Deselect to Output in High Z (CE2,CE1) -- -- 35 -- -- 30 ns Data Byte Control to Output High Z (LB,UB) -- -- 35 -- -- 30 ns tGHQZ tOHZ Output Disable to Output in High Z -- -- 30 -- -- 25 ns tAXOX tOH Data Hold from Address Change 10 -- -- 10 -- -- ns Address Access Time Data Byte Control Access Time Chip Select to Output Low Z Data Byte Control to Output Low Z (LB,UB) NOTE : 1. tBA is 35ns/30ns (@speed=70ns/55ns) with address toggle . tBA is 70ns/55ns (@speed=70ns/55ns) without address toggle . R0201-BS616LV1622 6 Revision 2.1 Jan. 2004 BSI BS616LV1622 SWITCHING WAVEFORMS (READ CYCLE) READ CYCLE1 (1,2,4) t RC ADDRESS t AA t OH t OH D OUT READ CYCLE2 (1,3,4) CE2 t ACS2 t ACS1 CE1 t t CHZ(5) (5) CLZ D OUT READ CYCLE3 (1,4) t RC ADDRESS t AA OE t CE2 t t CE1 t t t OE OH ACS2 OLZ t ACS1 (5) CLZ OHZ (5) (1,5) t CHZ t BDO LB,UB t BE t BA D OUT NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE1 = VIL and CE2 = VIH. 3. Address valid prior to or coincident with CE1 transition low and CE2 transition high. 4. OE = VIL . 5. The parameter is guaranteed but not 100% tested. R0201-BS616LV1622 7 Revision 2.1 Jan. 2004 BSI BS616LV1622 AC ELECTRICAL CHARACTERISTICS ( TA = WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME t AVAX t E1LWH t AVWL t AVWH t WLWH t WHAX t BW t WLQZ t DVWH t WHDX t GHQZ t WC t CW t AS t AW t WP t WR t BW(1) t WHZ t DW t DH t OHZ t WHOX t OW -40oC to +85oC ) CYCLE TIME : 70ns CYCLE TIME : 55ns DESCRIPTION Vcc = 3.0~5.5V Vcc = 2.7~5.5V MIN. TYP. MAX. MIN. TYP. MAX. UNIT Write Cycle Time 70 -- -- 55 -- -- ns Chip Select to End of Write 70 -- -- 55 -- -- ns Address Setup Time 0 -- -- 0 -- -- ns Address Valid to End of Write 70 -- -- 55 -- -- ns Write Pulse Width 35 -- -- 30 -- -- ns 0 -- -- 0 -- -- ns (CE2,CE1,WE) Write recovery Time Date Byte Control to End of Write (LB,UB) 30 -- -- 25 -- -- ns Write to Output in High Z -- -- 30 -- -- 25 ns Data to Write Time Overlap 30 -- -- 25 -- -- ns Data Hold from Write Time 0 -- -- 0 -- -- ns Output Disable to Output in High Z -- -- 30 -- -- 25 ns End of Write to Output Active 5 -- -- 5 -- -- ns NOTE : 1. tBW is 30ns/25ns (@speed=70ns/55ns) with address toggle. ; tBW is 70ns/55ns (@speed=70ns/55ns) without address toggle. SWITCHING WAVEFORMS (WRITE CYCLE) WRITE CYCLE1 (1) t WC ADDRESS (3) t WR OE CE2 (5) (11) t CW (5) CE1 t BW (5) LB,UB t AW WE (3) t WP t AS (2) (4,10) t OHZ D OUT t DH t DW D IN R0201-BS616LV1622 8 Revision 2.1 Jan. 2004 BSI BS616LV1622 WRITE CYCLE2 (1,6) t WC ADDRESS CE2 (11) t (5) CE1 t BW (5) LB,UB t WE CW AW t WR t WP (3) (2) t AS (4,10) t WHZ D OUT t OW t DH (7) (8) t DW (8,9) D IN NOTES: 1. WE must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE2, CE1 and WE low. All signals must be active to initiate a write and any one signal can terminate a write by going inactive. The data input setup and hold timing should be referenced to the second transition edge of the signal that terminates the write. 3. TWR is measured from the earlier of CE2 going low, or CE1 or WE going high at the end of write cycle. 4. During this period, DQ pins are in the output state so that the input signals of opposite phase to the outputs must not be applied. 5. If the CE2 high transition or CE1 low transition or LB,UB low transition occurs simultaneously with the WE low transitions or after the WE transition, output remain in a high impedance state. 6. OE is continuously low (OE = VIL ). 7. DOUT is the same phase of write data of this write cycle. 8. DOUT is the read data of next address. 9. If CE2 is high or CE1 is low during this period, DQ pins are in the output state. Then the data input signals of opposite phase to the outputs must not be applied to them. 10. The parameter is guaranteed but not 100% tested. 11. TCW is measured from the later of CE2 going high or CE1 going low to the end of write. R0201-BS616LV1622 9 Revision 2.1 Jan. 2004 BSI BS616LV1622 ORDERING INFORMATION BS616LV1622 X X Z YY SPEED 55: 55ns 70: 70ns PKG MATERIAL -: Normal G: Green P: Pb free GRADE C: +0oC ~ +70oC I: -40oC ~ +85oC PACKAGE T : TSOP1-48(12mmx20mm) Note: BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support systems and critical medical instruments. PACKAGE DIMENSIONS TSOP1-48 (12mm x 20mm) R0201-BS616LV1622 10 Revision 2.1 Jan. 2004