DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BSP60; BSP61; BSP62 PNP Darlington transistors Product specification Supersedes data of 1997 Apr 22 1999 Apr 29 Philips Semiconductors Product specification PNP Darlington transistors BSP60; BSP61; BSP62 PINNING FEATURES • High current (max. 0.5 A) PIN • Low voltage (max. 80 V) 1 • Integrated diode and resistor. DESCRIPTION base 2,4 3 collector emitter APPLICATIONS • Industrial switching applications such as: 4 – Print hammer 2, 4 – Solenoid 1 – Relay and lamp drivers. DESCRIPTION 1 PNP Darlington transistor in a SOT223 plastic package. NPN complements: BSP50, BSP51 and BSP52. 2 Top view 3 3 MAM266 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BSP60 − −60 V BSP61 − −80 V BSP62 − −90 V BSP60 − −45 V BSP61 − −60 V BSP62 − −80 V collector-emitter voltage VBE = 0 VEBO emitter-base voltage − −5 V IC collector current (DC) − −0.5 A ICM peak collector current − −1.5 A IB base current (DC) Ptot total power dissipation Tstg open collector − −100 mA − 1.25 W storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated Handbook”. 1999 Apr 29 2 Philips Semiconductors Product specification PNP Darlington transistors BSP60; BSP61; BSP62 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-s thermal resistance from junction to solder point VALUE UNIT 98 K/W 17 K/W note 1 Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICES PARAMETER CONDITIONS MIN. TYP. MAX. UNIT collector cut-off current BSP60 VBE = 0; VCE = −45 V − − −50 nA BSP61 VBE = 0; VCE = −60 V − − −50 nA BSP62 VBE = 0; VCE = −80 V − − −50 nA IEBO emitter cut-off current IC = 0; VEB = −4 V − − −50 nA hFE DC current gain VCE = −10 V; note 1; see Fig.2 IC = −150 mA 1000 − − IC = −500 mA 2000 − − collector-emitter saturation voltage IC = −500 mA; IB = −0.5 mA − − −1.3 V IC = −500 mA; IB = −0.5 mA; Tj = 150 °C − − −1.3 V VBEsat base-emitter saturation voltage IC = −500 mA; IB = −0.5 mA − − −1.9 V fT transition frequency IC = −500 mA; VCE = −5 V; f = 100 MHz − 200 − MHz − 400 − ns − 1500 − ns VCEsat Switching times (between 10% and 90% levels); see Fig.3 ton turn-on time toff turn-off time ICon = −500 mA; IBon = −0.5 mA; IBoff = 0.5 mA Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Apr 29 3 Philips Semiconductors Product specification PNP Darlington transistors BSP60; BSP61; BSP62 MGD839 6000 handbook, full pagewidth hFE 5000 4000 3000 2000 1000 0 −10−1 −1 −10 −102 VCE = −10 V. Fig.2 DC current gain; typical values. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MGD624 Vi = −10 V; T = 200 µs; tp = 6 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω. VBB = 1.8 V; VCC = −10.7 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 1999 Apr 29 4 oscilloscope IC (mA) −103 Philips Semiconductors Product specification PNP Darlington transistors BSP60; BSP61; BSP62 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 96-11-11 97-02-28 SOT223 1999 Apr 29 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification PNP Darlington transistors BSP60; BSP61; BSP62 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 29 6 Philips Semiconductors Product specification PNP Darlington transistors BSP60; BSP61; BSP62 NOTES 1999 Apr 29 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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