DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXT3906 PNP switching transistor Product specification Supersedes data of 1997 May 05 1999 Apr 14 Philips Semiconductors Product specification PNP switching transistor PXT3906 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • High-speed saturated switching applications. handbook, halfpage DESCRIPTION 2 PNP switching transistor in a SOT89 plastic package. NPN complement: PXT3904. 3 1 MARKING TYPE NUMBER 1 MARKING CODE PXT3906 2 3 Bottom view p2A MAM297 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current Ptot total power dissipation Tstg − −100 mA − 1.2 W storage temperature −55 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −55 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 1999 Apr 14 2 Philips Semiconductors Product specification PNP switching transistor PXT3906 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-s thermal resistance from junction to soldering point VALUE note 1 UNIT 104 K/W 24 K/W Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −30 V − −50 nA IEBO emitter cut-off current IC = 0; VEB = −6 V − −50 nA hFE DC current gain VCE = −1 V; (see Fig.2) VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage Cc collector capacitance IC = −0.1 mA 60 − IC = −1 mA 80 − IC = −10 mA 100 300 IC = −50 mA 60 − IC = −100 mA 30 − IC = −10 mA; IB = −1 mA − −250 mV IC = −50 mA; IB = −5 mA − −400 mV IC = −10 mA; IB = −1 mA −650 −850 mV IC = −50 mA; IB = −5 mA − −950 mV IE = ie = 0; VCB = −5 V; f = 1 MHz − 4.5 pF Ce emitter capacitance IC = ic = 0; VEB = −500 mV; f = 1 MHz − 10 pF fT transition frequency IC = −10 mA; VCE = −20 V; f = 100 MHz 250 − MHz F noise figure IC = −100 µA; VCE = −5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz − 4 dB ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA − 65 ns Switching times (between 10% and 90% levels); (see Fig.3) ton turn-on time td delay time − 35 ns tr rise time − 35 ns toff turn-off time − 300 ns ts storage time − 225 ns tf fall time − 75 ns 1999 Apr 14 3 Philips Semiconductors Product specification PNP switching transistor PXT3906 MGD835 160 handbook, full pagewidth hFE 120 80 40 0 −10−2 −10−1 −1 −10 −102 VCE = −1 V. Fig.2 DC current gain; typical values. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MGD624 Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = 1.9 V; VCC = −3 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 1999 Apr 14 4 oscilloscope IC (mA) −103 Philips Semiconductors Product specification PNP switching transistor PXT3906 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A b3 E HE L 1 2 3 c b2 w M b1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b1 b2 b3 c D E e e1 HE L min. w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.37 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 0.8 0.13 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOT89 1999 Apr 14 EUROPEAN PROJECTION ISSUE DATE 97-02-28 5 Philips Semiconductors Product specification PNP switching transistor PXT3906 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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