BSP75G ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET™ MOSFET SUMMARY Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ DESCRIPTION Self protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level power MOSFET intended as a general purpose switch. SOT223 PACKAGE FEATURES • High continuous current rating • Logic level input • Input protection (ESD) • Thermal shutdown with auto restart • Over load protection • Short circuit protection with pulse start capability and auto restart • Over voltage protection (active clamp) PINOUT DIAGRAM • Load dump protection (actively protects load) APPLICATIONS FUNCTIONAL BLOCK DIAGRAM • Especially suited for loads with a high inrush current such as lamps and motors • All types of resistive, inductive and capacitive loads in switching applications • C compatible power switch for 12V and 24V DC applications and for 42V Powernet • Automotive rated • Replaces electromechanical relays and discrete circuits DRAFT ISSUE C - NOVEMBER 2003 1 SEMICONDUCTORS BSP75G ADVANCE INFORMATION ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Continuous drain-source voltage V DS LIMIT UNIT 60 V 36 V -0.2 ... +10 V Drain-source voltage for short circuit protection V DS(SC) Continuous input voltage V IN Peak input voltage V IN -0.2 ... +20 V Operating temperature range T j, -40 to +150 °C Storage temperature range T stg -55 to +150 °C Power dissipation at T A =25°C PD 2.5 W Continuous drain current @ V IN =10V; T A =25°C 2 ID 1.6 A Pulsed drain current @ V IN =10V Unclamped single pulse inductive energy I DM 3 A E AS 550 mJ Load dump protection V LoadDump Electrostatic discharge (Human Body Model) V ESD 80 V 4000 V VALUE UNIT 50 °C/W NOTES 2 For a device surface mounted on FR4 PCB measured at t ⱕ10s THERMAL RESISTANCE PARAMETER SYMBOL Junction to ambient (a) RJA DRAFT ISSUE C - NOVEMBER 2003 SEMICONDUCTORS 2 BSP75G ADVANCE INFORMATION ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-source clamp voltage V DS(AZ) 70 75 V Off state drain current I DSS 60 0.1 3 A V DS =12V, V IN =0V Off state drain current I DSS 3 15 A V DS =32V, V IN =0V I D =10mA 1 I D =10mA Input threshold voltage V IN(th) 2.1 2.5 V Input current I IN 0.7 1.2 mA Input current I IN 1.5 2.7 mA V IN =+7V Input current I IN 4 7 mA V IN =+10V Static drain-source on-state resistance R DS(on) 520 675 m⍀ Static drain-source on-state resistance Continuous load current 2 R DS(on) 385 550 m⍀ V IN =5V, I D =0.7A V IN =10V, I D =0.7A ID 1.6 A Continuous load current 2 ID 1 A V IN =5V Current limit 3 I D(LIM) 0.7 1.1 1.75 A Current limit 3 I D(LIM) 2 3 4 A V IN =5V, V DS >5V V IN =10V, V DS >5V V IN =+5V V IN =10V DYNAMIC Turn-on time (V IN to 90% I D ) t on 4 20 s R L =22⍀, V IN =0 to 10V, V BB =12V Turn-off time (V IN to 90% I D ) t off 10 20 s R L =22⍀, V IN =10V to 0V, V BB =12V Slew rate on (70 to 50% V BB ) -dV DS /dt on 6.5 20 V/s R L =22⍀, V IN =0 to 10V, V BB =12V Slew rate off (50 to 70% V BB ) DV DS /dt on 3.2 10 V/s R L =22⍀, V IN =10V to 0V, V BB =12V PROTECTION FUNCTIONS 1 Required input voltage for over temperature protection V PROT 4.5 Thermal overload trip temperature T JT 150 Thermal hysteresis Unclamped single pulse inductive energy Tj=25°C V 175 10 550 E AS °C °C mJ I D(ISO) =0.7A, V BB =32V NOTES 1 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. 2 For a device surface mounted on FR4 PCB measured at tⱕ10s. 3 The drain current is limited to a reduced value when Vds exceeds a safe value. DRAFT ISSUE C - NOVEMBER 2003 3 SEMICONDUCTORS BSP75G ADVANCE INFORMATION PACKAGE OUTLINE PACKAGE DIMENSIONS Millimeters DIM Millimeters DIM MIN MAX MIN MAX A ᎏ 1.80 D 6.30 6.70 A1 0.02 0.10 e 2.30 BASIC A2 1.55 1.65 e1 4.60 BASIC b 0.66 0.84 E 6.70 7.30 b2 2.90 3.10 E1 3.30 3.70 © Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com DRAFT ISSUE C - NOVEMBER 2003 SEMICONDUCTORS 4