DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BSR50; BSR51; BSR52 NPN Darlington transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 12 Philips Semiconductors Product specification NPN Darlington transistors BSR50; BSR51; BSR52 FEATURES PINNING • High current (max. 1 A) PIN • Low voltage (max. 80 V) 1 base • Integrated diode and resistor. 2 collector 3 emitter DESCRIPTION APPLICATIONS • Industrial high gain amplification. handbook, halfpage DESCRIPTION 2 1 1 2 NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complements: BSR60, BSR61 and BSR62. 3 3 MAM307 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCES PARAMETER collector-base voltage CONDITIONS TYP. MAX. UNIT open emitter BSR50 − − 60 V BSR51 − − 80 V BSR52 − − 90 V BSR50 − − 45 V BSR51 − − 60 V collector-emitter voltage VBE = 0 − − 80 V − − 1 A Tamb ≤ 25 °C − − 0.83 W IC = 150 mA; VCE = 10 V 1000 − − IC = 500 mA; VCE = 10 V 2000 − − IC = 500 mA; VCE = 5 V; f = 100 MHz − 200 − BSR52 IC collector current (DC) Ptot total power dissipation hFE DC current gain fT transition frequency 1997 May 12 MIN. 2 MHz Philips Semiconductors Product specification NPN Darlington transistors BSR50; BSR51; BSR52 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BSR50 − 60 V BSR51 − 80 V BSR52 − 90 V BSR50 − 45 V BSR51 − 60 V BSR52 − 80 V − 5 V collector-emitter voltage VBE = 0 VEBO emitter-base voltage IC collector current (DC) − 1 A ICM peak collector current − 2 A IB base current (DC) − 100 mA open collector Ptot total power dissipation − 0.83 W Tstg storage temperature Tamb ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1997 May 12 3 VALUE UNIT 150 K/W Philips Semiconductors Product specification NPN Darlington transistors BSR50; BSR51; BSR52 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICES PARAMETER CONDITIONS MIN. TYP. MAX. UNIT collector cut-off current BSR50 VBE = 0; VCE = 45 V − − 50 nA BSR51 VBE = 0; VCE = 60 V − − 50 nA BSR52 VBE = 0; VCE = 80 V − − 50 nA IEBO emitter cut-off current IC = 0; VEB = 4 V − − 50 nA hFE DC current gain VCE = 10 V; see Fig.2 IC = 150 mA 1000 − − IC = 500 mA 2000 − − − − 1.3 V VCEsat collector-emitter saturation voltage IC = 0.5 A; IB = 0.5 mA VCEsat collector-emitter saturation voltage BSR51 IC = 1 A; IB = 1 mA − − 1.6 V BSR50; BSR52 IC = 1 A; IB = 4 mA − − 1.6 V IC = 0.5 A; IB = 0.5 mA − − 1.9 V BSR51 IC = 1 A; IB = 1 mA − − 2.2 V BSR50; BSR52 IC = 1 A; IB = 4 mA − − 2.2 V 200 − MHz − − 500 ns − − 1300 ns VBEsat base-emitter saturation voltage VBEsat base-emitter saturation voltage fT transition frequency IC = 500 mA; VCE = 5 V; f = 100 MHz − Switching times (between 10% and 90% levels); see Fig.3 ton turn-on time toff turn-off time 1997 May 12 ICon = 500 mA; IBon = 0.5 mA; IBoff = −0.5 mA 4 Philips Semiconductors Product specification NPN Darlington transistors BSR50; BSR51; BSR52 MGD838 5000 handbook, full pagewidth hFE 4000 3000 2000 1000 0 10−1 1 102 10 VCE = 10 V. Fig.2 DC current gain; typical values. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 10 V; T = 200 µs; tp = 6 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω. VBB = −1.8 V; VCC = 10.7 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 1997 May 12 5 oscilloscope IC (mA) 103 Philips Semiconductors Product specification NPN Darlington transistors BSR50; BSR51; BSR52 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1997 May 12 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN Darlington transistors BSR50; BSR51; BSR52 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 May 12 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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