PHILIPS BSR62

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
BSR62
PNP Darlington transistor
Product data sheet
Supersedes data of 1999 Apr 26
2004 Nov 11
NXP Semiconductors
Product data sheet
PNP Darlington transistor
BSR62
FEATURES
PINNING
• High current (max. 1 A)
PIN
• Low voltage (max. 80 V)
1
base
• Integrated diode and resistor.
2
collector
3
emitter
DESCRIPTION
APPLICATIONS
• Industrial applications such as:
handbook, halfpage
– Print hammer
– Solenoid
1
– Relay and lamp driving.
2
2
1
3
DESCRIPTION
3
MAM306
PNP Darlington transistor in a TO-92; SOT54 plastic
package. NPN complement: BSR52.
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BSR62
SC-43A
DESCRIPTION
VERSION
plastic single-ended leaded (through hole) package; 3 leads
SOT54
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−90
V
VCES
collector-emitter voltage
VBE = 0 V
−
−80
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
−
−1
A
ICM
peak collector current
−
−2
A
IB
base current (DC)
−
−0.2
A
Ptot
total power dissipation
−
830
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Nov 11
2
NXP Semiconductors
Product data sheet
PNP Darlington transistor
BSR62
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
150
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
−
−
−50
nA
−
−
−50
nA
IC = −150 mA
1 000
−
−
IC = −500 mA
2 000
−
−
IC = −0.5 A; IB = −0.5 mA
−
−
−1.4
V
IC = −1 A; IB = −4 mA
−
−
−1.8
V
−
−
−2
V
IC = −1 A; IB = −4 mA
−
−
−2.4
V
VCE = −5 V; IC = −500 mA;
f = 100 MHz
−
200
−
MHz
−
−
0.5
μs
−
−
0.7
μs
ICES
collector-emitter cut-off current VBE = 0 V; VCE = −80 V
IEBO
emitter-base cut-off current
VEB = −4 V; IC = 0 A
hFE
DC current gain
VCE = −10 V; see Fig.2
VCEsat
collector-emitter saturation
voltage
VBEsat
base-emitter saturation voltage IC = −0.5 A; IB = −0.5 mA
fT
transition frequency
MIN.
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
toff
turn-off time
2004 Nov 11
ICon = −500 mA; IBon = −0.5 mA;
IBoff = 0.5 mA
3
NXP Semiconductors
Product data sheet
PNP Darlington transistor
BSR62
MGD839
6000
handbook, full pagewidth
hFE
5000
4000
3000
2000
1000
0
−10−1
−1
−10
−102
VCE = −10 V.
Fig.2 DC current gain; typical values.
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MGD624
Vi = −10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.
VBB = 1.8 V; VCC = −10.7 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
2004 Nov 11
4
oscilloscope
IC (mA)
−103
NXP Semiconductors
Product data sheet
PNP Darlington transistor
BSR62
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
mm
5.2
5.0
0.48
0.40
0.66
0.55
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
e
2.54
e1
L
L1(1)
1.27
14.5
12.7
2.5
max.
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
2004 Nov 11
REFERENCES
IEC
JEDEC
JEITA
TO-92
SC-43A
5
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
NXP Semiconductors
Product data sheet
PNP Darlington transistor
BSR62
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2004 Nov 11
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2009
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Printed in The Netherlands
R75/05/pp7
Date of release: 2004 Nov 11
Document order number: 9397 750 13602