BZT52H series Single Zener diodes in a SOD123F package Rev. 01 — 22 December 2005 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD123F small and flat lead Surface Mounted Device (SMD) plastic package. 1.2 Features ■ Total power dissipation: ≤ 830 mW ■ Wide working voltage range: nominal 2.4 V to 75 V (E24 range) ■ Small plastic package suitable for surface mounted design ■ Low differential resistance 1.3 Applications ■ General regulation functions 1.4 Quick reference data Table 1: Symbol Quick reference data Parameter Conditions Min Typ Max Unit VF forward voltage IF = 10 mA [1] - - 0.9 V Ptot total power dissipation Tamb ≤ 25 °C [2] - - 375 mW [3] - - 830 mW [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. BZT52H series Philips Semiconductors Single Zener diodes in a SOD123F package 2. Pinning information Table 2: Pinning Pin Description 1 cathode 2 anode Simplified outline Symbol [1] 1 1 2 2 sym001 [1] The marking bar indicates the cathode. 3. Ordering information Table 3: Ordering information Type number BZT52H-C2V4 to BZT52H-C75 [1] [1] Package Name Description Version - plastic surface mounted package; 2 leads SOD123F The series consists of 37 types with nominal working voltages from 2.4 V to 75 V. 4. Marking Table 4: Marking codes Type number Marking code Type number Marking code Type number Marking code BZT52H-C2V4 B3 BZT52H-C8V2 BG BZT52H-C30 BV BZT52H-C2V7 B4 BZT52H-C9V1 BH BZT52H-C33 BW BZT52H-C3V0 B5 BZT52H-C10 BJ BZT52H-C36 BX BZT52H-C3V3 B6 BZT52H-C11 BK BZT52H-C39 BY BZT52H-C3V6 B7 BZT52H-C12 BL BZT52H-C43 BZ BZT52H-C3V9 B8 BZT52H-C13 BM BZT52H-C47 C1 BZT52H-C4V3 B9 BZT52H-C15 BN BZT52H-C51 C2 BZT52H-C4V7 BA BZT52H-C16 BP BZT52H-C56 C3 BZT52H-C5V1 BB BZT52H-C18 BQ BZT52H-C62 C4 BZT52H-C5V6 BC BZT52H-C20 BR BZT52H-C68 C5 BZT52H-C6V2 BD BZT52H-C22 BS BZT52H-C75 C6 BZT52H-C6V8 BE BZT52H-C24 BT - - BZT52H-C7V5 BF BZT52H-C27 BU - - 9397 750 15082 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 22 December 2005 2 of 10 BZT52H series Philips Semiconductors Single Zener diodes in a SOD123F package 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter IF Conditions Min Max Unit forward current - 250 mA IZSM non-repetitive peak reverse current - see Table 8, 9 and 10 PZSM non-repetitive peak reverse power dissipation [1] - 40 W Ptot total power dissipation [2] - 375 mW [3] - 830 mW Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] tp = 100 µs; square wave; Tj = 25 °C prior to surge [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Rth(j-a) Rth(j-sp) Conditions thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Typ Max Unit - - 330 K/W [2] - - 150 K/W [3] - - 70 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Soldering point of cathode tab. 9397 750 15082 Product data sheet Min [1] © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 22 December 2005 3 of 10 BZT52H series Philips Semiconductors Single Zener diodes in a SOD123F package 7. Characteristics Table 7: Characteristics Tj = 25 °C unless otherwise specified. Symbol Conditions forward voltage VF [1] Parameter [1] IF = 10 mA Min Typ Max Unit - - 0.9 V Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Table 8: Characteristics per type; BZT52H-C2V4 to BZT52H-C24 Tj = 25 °C unless otherwise specified. BZT52H -Cxxx Working voltage VZ (V); IZ = 5 mA Maximum differential resistance rdif (Ω) Reverse current IR (µA) Temperature coefficient SZ (mV/K); IZ = 5 mA Diode capacitance Cd (pF) [1] Non-repetitive peak reverse current IZSM (A) [2] Min Max IZ = 1 mA IZ = 5 mA Max VR (V) Min Max Max Max 2V4 2.2 2.6 400 85 50 1 −3.5 0.0 450 6.0 2V7 2.5 2.9 500 3V0 2.8 3.2 500 83 20 1 −3.5 0.0 450 6.0 95 10 1 −3.5 0.0 450 6.0 3V3 3.1 3.5 500 95 5 1 −3.5 0.0 450 6.0 3V6 3.4 3.8 500 95 5 1 −3.5 0.0 450 6.0 3V9 4V3 3.7 4.1 500 95 3 1 −3.5 0.0 450 6.0 4.0 4.6 500 95 3 1 −3.5 0.0 450 6.0 4V7 4.4 5.0 500 78 3 2 −3.5 0.2 300 6.0 5V1 4.8 5.4 480 60 2 2 −2.7 1.2 300 6.0 5V6 5.2 6.0 400 40 1 2 −2.0 2.5 300 6.0 6V2 5.8 6.6 150 10 3 4 0.4 3.7 200 6.0 6V8 6.4 7.2 80 8 2 4 1.2 4.5 200 6.0 7V5 7.0 7.9 80 10 1 5 2.5 5.3 150 4.0 8V2 7.7 8.7 80 10 0.7 5 3.2 6.2 150 4.0 9V1 8.5 9.6 100 10 0.5 6 3.8 7.0 150 3.0 10 9.4 10.6 70 10 0.2 7 4.5 8.0 90 3.0 11 10.4 11.6 70 10 0.1 8 5.4 9.0 85 2.5 12 11.4 12.7 90 10 0.1 8 6.0 10.0 85 2.5 13 12.4 14.1 110 10 0.1 8 7.0 11.0 80 2.5 15 13.8 15.6 110 15 0.05 10.5 9.2 13.0 75 2.0 16 15.3 17.1 170 20 0.05 11.2 10.4 14.0 75 1.5 18 16.8 19.1 170 20 0.05 12.6 12.4 16.0 70 1.5 20 18.8 21.2 220 20 0.05 14 14.4 18.0 60 1.5 22 20.8 23.3 220 25 0.05 15.4 16.4 20.0 60 1.25 24 22.8 25.6 220 30 0.05 16.8 18.4 22.0 55 1.25 [1] f = 1 MHz; VR = 0 V [2] tp = 100 µs; Tamb = 25 °C 9397 750 15082 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 22 December 2005 4 of 10 BZT52H series Philips Semiconductors Single Zener diodes in a SOD123F package Table 9: Characteristics per type; BZT52H-C27 to BZT52H-C51 Tj = 25 °C unless otherwise specified. BZT52H -Cxxx Working voltage VZ (V); IZ = 2 mA Maximum differential resistance rdif (Ω) Reverse current IR (µA) Min Max IZ = 1 mA IZ = 5 mA Max VR (V) 27 25.1 28.9 250 40 0.05 18.9 21.4 25.3 50 1.0 30 28.0 32.0 250 40 0.05 21 24.4 29.4 50 1.0 33 31.0 35.0 250 40 0.05 23.1 27.4 33.4 45 0.9 36 34.0 38.0 250 60 0.05 25.2 30.4 37.4 45 0.8 39 37.0 41.0 300 75 0.05 27.3 33.4 41.2 45 0.7 43 40.0 46.0 325 80 0.05 30.1 37.6 46.6 40 0.6 47 44.0 50.0 325 90 0.05 32.9 42.0 51.8 40 0.5 51 48.0 54.0 350 100 0.05 35.7 46.6 57.2 40 0.4 [1] f = 1 MHz; VR = 0 V [2] tp = 100 µs; Tamb = 25 °C Temperature coefficient SZ (mV/K); IZ = 5 mA Diode Non-repetitive peak capacitance reverse current Cd (pF) [1] IZSM (A) [2] Min Max Max Max Table 10: Characteristics per type; BZT52H-C56 to BZT52H-C75 Tj = 25 °C unless otherwise specified. BZT52H -Cxxx Working voltage VZ (V); IZ = 2 mA Maximum differential resistance rdif (Ω) Min Max IZ = 0.5 mA IZ = 2 mA Max 56 52.0 60.0 375 120 62 58.0 66.0 400 68 64.0 72.0 400 75 70.0 79.0 400 [1] f = 1 MHz; VR = 0 V [2] tp = 100 µs; Tamb = 25 °C Reverse current IR (µA) Temperature coefficient SZ (mV/K); IZ = 5 mA Diode Non-repetitive peak capacitance reverse current Cd (pF) [1] IZSM (A) [2] VR (V) Min Max Max Max 0.05 39.2 52.2 63.8 40 0.3 140 0.05 43.4 58.8 71.6 35 0.3 160 0.05 47.6 65.6 79.8 35 0.25 175 0.05 52.5 73.4 88.6 35 0.20 9397 750 15082 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 22 December 2005 5 of 10 BZT52H series Philips Semiconductors Single Zener diodes in a SOD123F package mbg801 103 PZSM (W) mbg781 300 IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 10 tp (ms) 0 0.6 0.8 1 VF (V) (1) Tj = 25 °C (prior to surge) Tj = 25 °C (2) Tj = 150 °C (prior to surge) Fig 1. Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values mbg783 0 Fig 2. Forward current as a function of forward voltage; typical values mbg782 10 12 SZ (mV/K) SZ (mV/K) 4V3 11 10 −1 9V1 5 3V9 8V2 7V5 6V8 3V6 −2 6V2 5V6 5V1 0 3V3 4V7 3V0 2V4 2V7 −3 −5 0 20 40 IZ (mA) 60 0 4 8 12 BZT52H-C2V4 to BZT52H-C4V3 BZT52H-C4V7 to BZT52H-C12 Tj = 25 °C to 150 °C Tj = 25 °C to 150 °C Fig 3. Temperature coefficient as a function of working current; typical values IZ (mA) 20 Fig 4. Temperature coefficient as a function of working current; typical values 9397 750 15082 Product data sheet 16 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 22 December 2005 6 of 10 BZT52H series Philips Semiconductors Single Zener diodes in a SOD123F package 8. Package outline 1.7 1.5 1.2 1.0 1 0.55 0.35 3.6 3.4 2.7 2.5 2 0.70 0.55 0.25 0.10 Dimensions in mm 04-11-29 Fig 5. Package outline SOD123F 9. Packing information Table 11: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package BZT52H-C2V4 to SOD123F BZT52H-C75 [1] Description Packing quantity 4 mm pitch, 8 mm tape and reel 3000 10000 -115 -135 For further information and the availability of packing methods, see Section 16. 10. Soldering 4.4 4 2.9 1.6 solder lands solder resist 2.1 1.6 1.1 1.2 solder paste occupied area 1.1 (2×) Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 6. Reflow soldering footprint SOD123F 9397 750 15082 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 22 December 2005 7 of 10 BZT52H series Philips Semiconductors Single Zener diodes in a SOD123F package 11. Revision history Table 12: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BZT52H_SER_1 20051222 Product data sheet - 9397 750 15082 - 9397 750 15082 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 22 December 2005 8 of 10 BZT52H series Philips Semiconductors Single Zener diodes in a SOD123F package 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 15. Trademarks 14. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 15082 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 01 — 22 December 2005 9 of 10 BZT52H series Philips Semiconductors Single Zener diodes in a SOD123F package 17. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . General description. . . . . . . . . . . . . . . . . . . . . . Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . Quick reference data. . . . . . . . . . . . . . . . . . . . . Pinning information . . . . . . . . . . . . . . . . . . . . . . Ordering information . . . . . . . . . . . . . . . . . . . . . Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . Thermal characteristics. . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . Package outline . . . . . . . . . . . . . . . . . . . . . . . . . Packing information. . . . . . . . . . . . . . . . . . . . . . Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . . 1 1 1 1 1 2 2 2 3 3 4 7 7 7 8 9 9 9 9 9 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 December 2005 Document number: 9397 750 15082 Published in The Netherlands