CAT808 Low-Power Precision Voltage Detector FEATURES DESCRIPTION Ultra Low Current Consumption 2.4µA The CAT808 is a high-precision voltage detector designed for monitoring single cell and multi-cell batteries. Voltage detection thresholds between 2.0V and 3.2V are provided with 0.1V resolution and ±3.0% accuracy. Accurate Voltage Detection Threshold Fine Voltage Detection Threshold Resolution Active Low Open Drain Output The CAT808 open-drain output is active low until the VDD voltage exceeds the detection threshold. A low hysteresis is built into the device to minimize output “chatter”, while VDD passes through the detection threshold, and the output transitions high. Available in 5-pin TSOT- 23 and 3-pin SOT- 89 RoHS compliant packages Industrial temperature range -40°C to +85°C APPLICATIONS Battery-Powered Systems After the CAT808 asserts the output high condition, it continues to monitor VDD until it drops below the detection threshold, when the output goes low until VDD once again exceeds the detection threshold. Power Supply Monitoring Handheld and Portable Equipment Processor Supervisor Reset For Ordering Information details, see page 7. PIN CONFIGURATION SOT-89 TYPICAL APPLICATION 5-Lead Thin SOT-23 IN VDD OUT 1 OUT 1 VDD 2 VDD 2 GND 3 GND 3 5 NC Battery Voltage CAT808 OUT 4 NC 10kΩ DC-DC CONVERTER SHDN OUT GND GND Note: The value of the pull-up resistor is not critical © 2006 Catalyst Semiconductor, Inc. Characteristics subject to change without notice 1 Doc. No. 3024 Rev. A CAT808 (1) ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units -55 to +125 ºC -65 to +150 ºC -2.0 to VDD + 2.0 V -2.0 to 7.0 V +300 ºC TSOT-23-5 250 mW SOT-89 500 mW Ratings Units +1.2 to +6.0 V -40 to +85 ºC Temperature under Bias Storage Temperature Voltage on any Pin with Respect to GND (2)(3) VDD with Respect to GND Lead Soldering temperature (10 seconds) Power Dissipation RECOMMENDED OPERATING CONDITIONS Parameters VDD Operating Temperature Range DC ELECTRICAL CHARACTERISTICS TA = -40ºC to +85ºC, VDD = 1.2V to 6.0V Symbol Parameter Conditions Min Typ. Max VDET Detection Voltage, 27 TA = -40ºC to +85ºC 2.62 2.7 2.78 VDET Detection Voltage, 32 TA = -40ºC to +85ºC 3.12 3.2 3.28 VDD = 4.0V - 2.4 5 VDD = 5.0V - 3.5 7 VDD = 6.0V - 5 10 0.6 2.9 1.4 5 - mA IDD Current Consumption VDD=1.2V VDD=2.4V Units V µA IOUT Output SinkCurrent VDS = 0.5V ILEAK Output Leakage Current VDS = 5.0V, VDD = 5.0V - - 1 µA Response Time – - - 60 µs Detection Voltage Temperature Coefficient(4) TA = -40ºC to +85ºC - TPHL/LH Δ - VDET ΔTA ● -VDET ±10 ±100 ppm/ºC Notes: (1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the devices at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. (2) The Minimum DC input voltage is -0.5V. During transitions, inputs may undershoot to -2.0V for periods of less than 20ns. Maximum DC voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20ns. (3) Latch-up protection is provided for stresses up to 100mA on all pins from -1V to VCC +1V. (4) The temperature change ratio in the detection voltage [ppm/°C] is calculated by using the following equation: Δ − VDET × 1,000,000[ppm /º C] ΔTA • - VDET Doc. No. 3024 Rev. A 2 © 2006 Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT808 OPERATION – VOLTAGE DETECTOR The CAT808 has an active low output that asserts (pulls low) when the supply voltage drops below the detection threshold voltage (VDET). The open-drain output requires an external pull-up resistor between the output pin and the supply voltage (as shown in the typical application diagram). On power-up, ¯¯¯¯ OUT is held active low until the supply voltage (VDD) rises above VDET. While VDD is above VDET, ¯¯¯¯ OUT stays high until VDD drops below VDET, then ¯¯¯¯ OUT once again goes low. BLOCK DIAGRAM OUT VDD VOLTAGE REFERENCE TIMING DIAGRAM VDD* VDET(MAX) VDET(MAX) VDET VDET VDET(MIN) GND VDET(MIN) TPLH VOH TPHL OUT Slews with VDD OUT * Voltage of VDD below 1 volt will not be able to maintain low output. PIN FUNCTIONS Pin Function VDD Voltage Input and Power Supply GND Ground Pin ¯¯¯¯ OUT Active Low Open Drain output NC No Connect, the pin is electrically open © 2006 Catalyst Semiconductor, Inc. Characteristics subject to change without notice 3 Doc. No. 3024 Rev. A CAT808 TYPICAL ELECTRICAL OPERATING CHARACTERISTICS Typical values at TA = 25°C. VDD Supply Current vs. VDD Supply Voltage VDET Detection Voltage vs. Temperature 2.71 5 Supply Current (μA) 4 2.705 VDET (V) 3 2 2.7 1 0 2 3 4 5 6 2.695 -40 Supply Voltage (V) -5 30 65 100 Temperature (ºC) Response time vs. Load Capacitance IOUT Transistor Output Current vs. VDD Supply Voltage 100 10.00 8.00 1 +25ºC (mA) TPLH 10 6.00 IOUT Response time [ms] -40ºC 4.00 +90ºC 0.1 2.00 TPHL 0.01 0.001 0.00001 0.01 0.000001 0.1 0.0001 1 0.001 10 0.01 0.00 1.00 100 0.1 Load capacitance [nF] Doc. No. 3024 Rev. A 1.50 2.00 2.50 VDD (V) 4 © 2006 Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT808 PACKAGE INFORMATION 5-LEAD TSOT-23 PACKAGE e e E E1 E1 e1 D A2 GAUGE PLANE c A L2 L A1 b L1 SYMBOL A A1 A2 b c D E E1 e e1 L L1 L2 q MIN — 0.01 0.80 0.30 0.12 NOM — 0.05 0.87 — 0.15 2.90BSC 2.80BSC 1.60BSC 0.95BSC 1.90BSC 0.40 0.60REF 0.25BSC 0.30 0º MAX 1.00 0.10 0.90 0.45 0.20 0.50 8º Notes: (1) All dimensions are in millimeters. (2) Complies with JEDEC specification MO-193. © 2006 Catalyst Semiconductor, Inc. Characteristics subject to change without notice 5 Doc. No. 3024 Rev. A CAT808 3-LEAD SOT-89 PACKAGE D D1 E H L e e1 A C A1 b b b1 SYMBOL A A1 L b b1 C D D1 H E e1 e MIN 1.40 0.30 0.80 0.36 0.41 0.38 4.40 1.40 3.94 2.40 2.90 1.45 NOM 1.50 0.40 – 0.42 0.47 0.40 4.50 1.60 – 2.50 3.00 1.50 MAX 1.60 0.50 1.20 0.48 0.53 0.43 4.60 1.75 4.25 2.60 3.10 1.55 Notes: (1) All dimensions are in millimeters. (2) Lead frame material: copper. Doc. No. 3024 Rev. A 6 © 2006 Catalyst Semiconductor, Inc. Characteristics subject to change without notice CAT808 EXAMPLE OF ORDERING INFORMATION Prefix Device # CAT Optional Company ID Suffix 808N TB Product Number 808N I -27 Temperature Range I = Industrial (-40°C to 85°C) Package TB: TSOT-23-5 TF: SOT-89 Lead Finish G: NiPdAu Blank: Matte-Tin Voltage Detection Level -20: 2.0V Tape & Reel T: Tape & Reel 1: 1000 Reel 3: 3000 Reel -32: 3.2V Notes: (1) All packages are RoHS-compliant (Lead-free, Halogen-free). (2) The standard finish is NiPdAu. (3) The device used in the above example is a CAT808NTBI-27-GT3 (TSOT-23-5, Industrial Temperature, 2.7V Detection Level, NiPdAu, Tape & Reel). (4) For additional detection voltage, package and temperature options, please contact your nearest Catalyst Semiconductor Sales office. TOP MARKING Part Number Package Detection Voltage Top Marking CAT808NTBI-27-G TSOT-23-5 2.70 MVym CAT808NTBI-32-G TSOT-23-5 3.20 MVym CAT808NTFI-27 SOT-89 2.70 AAxxx CAT808NTFI-32 SOT-89 3.20 AAxxx Notes: (1) ym – Year and Month Code. (2) xxx – Assembly location code and last 2 digits of assembly lot code. (3) SOT-89 is offered in Matte-Tin only. © 2006 Catalyst Semiconductor, Inc. Characteristics subject to change without notice 7 Doc. No. 3024 Rev. A REVISION HISTORY Date 11/07/06 Rev. A Reason Initial Issue Copyrights, Trademarks and Patents Trademarks and registered trademarks of Catalyst Semiconductor include each of the following: Beyond Memory™, DPP™, EZDim™, MiniPot™, and Quad-Mode™ Catalyst Semiconductor has been issued U.S. and foreign patents and has patent applications pending that protect its products. CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GUARANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRODUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARISING OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES. Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where personal injury or death may occur. Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets labeled "Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale. Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate typical semiconductor applications and may not be complete. Catalyst Semiconductor, Inc. Corporate Headquarters 2975 Stender Way Santa Clara, CA 95054 Phone: 408.542.1000 Fax: 408.542.1200 www.catsemi.com Document No: 3024 Revision: A Issue date: 11/07/06