NT IA PL M CO S oH *R Features ■ ■ ■ ■ Applications Lead free as standard RoHS compliant* Leadless High speed ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players Switching Chip Diode Series - 0603 / 1005 General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers small-signal high-speed Switching Diodes for switching digital signal applications, in compact chip package 0603 and 1005 size format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Switching Diodes offer a forward current of 100 mA or 150 mA, a reverse voltage of 80 V or 75 V and also have a low leakage reverse current option. The diodes are lead-free with Cu/Ni/Au plated terminations and are compatible with lead-free manufacturing processes, conforming to many industry and government regulations on lead-free components. Bourns® Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes roll away much more difficult. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter Symbol CDxxxx-S0180 Forward Voltage (Max.) VF 1.00 (If = 100 mA) Capacitance Between Terminals (Max.) CT Reverse Recovery Time (Max.) trr Reverse Current (Max.) IR CDxxxx-S01575 CDxxxx-S0180R 1.00 1.00 (If = 50 mA) (If = 100 mA) 4 (f = 100 MHz, Vr = 1 V DC) 4 (Vr = 6V, If = 10 mA, RL = 50 Ω) 0.1 2.5 0.05 (Vr = 80 V) (Vr = 75 V) (Vr = 75 V) Unit V pF nS µA Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Forward Current, Surge Peak Power Dissipation - CD0603 Power Dissipation - CD1005 Symbol CDxxxx-S0180 CDxxxx-S01575 CDxxxx-S0180R Unit VRRM VR 90 100 90 V 80 75 80 V Io Isurge 100 150 100 mA 1* 4** 1* A 150 300 150 300 150 300 mW PD Storage Temperature TSTG -40 to +125 °C Junction Temperature TJ -40 to +125 °C * Condition: 8.3 ms single half sine-wave superimposed on rate load (JEDEC method). ** Condition: 1.0 µs single half sine-wave superimposed on rate load (JEDEC method). How To Order CD 0603 - S 01 80 R Common Code Chip Diode Package • 0603 • 1005 Model S = High Speed Switching Average Forward Current (Io) Code 01 = 100 mA 015 = 150 mA (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 80 = 80 V 75 = 75 V *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Reverse Current Suffix R = Low Leakage IR (CDxxxx-S0180R) Switching Chip Diode Series - 0603 / 1005 Product Dimensions Recommended Pad Layout A A B B C D Dimension 0603 1.70 (0.067) 0.80 (0.031) 0.60 (0.024) A (Max.) C B (Min.) C (Min.) F DIMENSIONS: 1005 2.10 (0.082) 1.20 (0.047) 1.20 (0.047) MM (INCHES) E Dimension A B C D E F 0603 1.60 - 1.80 (0.063 - 0.071) 0.80 - 1.00 (0.031 - 0.039) 0.25 Typ. (0.010) 0.70 - 0.85 (0.027 - 0.033) 0.35 Typ. (0.014) 0.30 Typ. (0.012) 1005 2.40 - 2.60 (0.095 - 0.102) 1.10 - 1.30 (0.043 - 0.051) 0.35 Typ. (0.014) 0.70 - 0.90 (0.027 - 0.035) 0.35 Typ. (0.014) 0.30 Typ. (0.012) Physical Specifications Case ....................................0603(1608) / 1005(2512) Molded plastic Terminals ......................Solder plated, solderable per MIL-STD-750, Method 2026 Polarity ....................................................Indicated by cathode band Mounting Position ........................................................................Any Typical Part Marking CDxxxx-S0180 ................................................................................S1 CDxxxx-S01575 ..............................................................................S3 MM DIMENSIONS: (INCHES) CDxxxx-S0180R ..............................................................................S2 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Switching Chip Diode Series - 0603 / 1005 Rating and Characteristic Curves: CDxxxx-S0180 Reverse Characteristics Forward Characteristics 1000 100 Reverse Current (nA) Forward Current (mAmps) 10 100 125 °C 1 85 °C 10 0.1 25 °C 25 °C 125 °C 85 °C 0 -25 °C 0 1 0.0 0.2 0.4 0.6 0.8 1.0 10 20 30 1.2 40 50 60 70 80 Reverse Voltage (Volts) Forward Voltage (Volts) Capacitance Between Terminals Derating Curve 5.0 120 F = 100 MHz Ta = 25 ° C Mounting on glass epoxy PCBs 100 Capacitance Between Terminals (pF) 4.0 I0 Current (%) 80 60 40 3.0 2.0 1.0 20 0 0 25 50 75 100 125 Ambient Temperature (°C) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 150 0.0 0 2 4 6 8 Reverse Voltage (Volts) 10 12 14 Switching Chip Diode Series - 0603 / 1005 Rating and Characteristic Curves: CDxxxx-S01575 Reverse Characteristics Forward Characteristics 1000 100.0 Forward Current (mAmps) 10.0 125 °C Reverse Current (nA) 100 10 85 °C 1.0 0.1 25 °C 25 °C 125 °C 85 °C -25 °C 0 1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 10 20 30 40 50 60 70 80 Reverse Voltage (Volts) Forward Voltage (Volts) Capacitance Between Terminals Derating Curve 5.0 120 F = 100 MHz Ta = 25 ° C Mounting on glass epoxy PCBs 100 Capacitance Between Terminals (pF) 4.0 I0 Current (%) 80 60 40 3.0 2.0 1.0 20 0 0 25 50 75 100 Ambient Temperature (°C) 125 150 0.0 0 2 4 6 8 10 12 14 Reverse Voltage (Volts) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. Switching Chip Diode Series - 0603 / 1005 Rating and Characteristic Curves: CDxxxx-S0180R Reverse Characteristics Forward Characteristics 1000 100.0 Forward Current (mAmps) 10.0 100 Reverse Current (nA) 125 °C 10 1.0 85 °C 0.1 25 °C 125 °C 85 °C 25 °C -25 °C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 Forward Voltage (Volts) 0 20 40 60 80 Reverse Voltage (Volts) Capacitance Between Terminals Derating Curve 5.0 120 F = 100 MHz Ta = 25 ° C Mounting on glass epoxy PCBs 100 Capacitance Between Terminals (pF) 4.0 I0 Current (%) 80 60 40 3.0 2.0 1.0 20 0 0 25 50 75 100 125 Ambient Temperature (°C) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 150 0.0 0 2 4 6 8 Reverse Voltage (Volts) 10 12 14 Switching Chip Diode Series - 0603 / 1005 Packaging Information The product will be dispensed in Tape and Reel format (see diagram below). P 0 P 1 d T E Index Hole 120 ° F D2 W B D1 D P Trailer A C Device Leader ....... ....... ....... ....... ....... ....... ....... ....... End W1 Start DIMENSIONS: 10 pitches (min.) 10 pitches (min.) Direction of Feed Item Symbol Carrier Width A Carrier Length B Carrier Depth C Sprocket Hole d Reel Outside Diameter D Reel Inner Diameter D1 Feed Hole Diameter D2 Sprocket Hole Position E Punch Hole Position F Punch Hole Pitch P Sprocket Hole Pitch P0 Embossment Center P1 Overall Tape Thickness T Tape Width W Reel Width W1 Quantity per Reel REV. 04/05 COPYRIGHT© 2003, BOURNS, INC. LITHO IN U.S.A. 10/03 e/IPA0303 -- MM (INCHES) Devices are packed in accordance with EIA standard RS-481-A and specifications shown here. 0603 1.00 ± 0.10 (0.039 - 0.004) 1.85 ± 0.10 (0.073 - 0.004) 1.00 ± 0.10 (0.039 - 0.004) 1.55 ± 0.05 (0.061 - 0.002) 178 (7.008) 60.0 MIN. (2.362) 13.0 ± 0.20 (0.512 - 0.008) 1.75 ± 0.10 (0.069 - 0.004) 3.50 ± 0.05 (0.138 - 0.002) 4.00 ± 0.10 (0.157 - 0.004) 4.00 ± 0.10 (0.157 - 0.004) 2.00 ± 0.05 (0.079 - 0.002) 0.20 ± 0.05 (0.008 - 0.002) 8.00 ± 0.20 (0.315 - 0.008) 13.5 MAX. (0.531) 4,000 1005 1.55 ± 0.10 (0.061 - 0.004) 2.65 ± 0.10 (0.104 - 0.004) 1.05 ± 0.10 (0.041 - 0.004) 1.55 ± 0.10 (0.061 - 0.004) 178 (7.008) 60.0 MIN. (2.362) 13.0 ± 0.20 (0.512 - 0.008) 1.75 ± 0.10 (0.069 - 0.004) 3.50 ± 0.05 (0.138 - 0.002) 4.00 ± 0.10 (0.157 - 0.004) 4.00 ± 0.10 (0.157 - 0.004) 2.00 ± 0.05 (0.079 - 0.002) 0.25 ± 0.05 (0.010 - 0.002) 8.00 ± 0.20 (0.315 - 0.008) 13.5 MAX. (0.531) 4,000 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.