oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features ■ ■ ■ ■ ■ Applications Lead free versions available RoHS compliant (lead free version)* Low profile Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD216A-B120L ~ B140 MITE Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Schottky Rectifier Diodes for rectification applications in compact DO-216AA size chip package formats, which offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Barrier Rectifier Diodes offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 40 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away. Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter CD216- Symbol Unit B120L B120R B130L B140 Forward Voltage (Max.) (If = 1 A) VF 0.45 0.53 0.38 0.55 V Typical Junction Capacitance* CT 90 75 70 60 pF Reverse Current (Max.) (at Rated VR) IR 400 10 410 500 µA B130L B140 * Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted) Parameter CD216- Symbol B120L Repetitive Peak Reverse Voltage B120R Unit VRRM VDC 20 20 30 40 V DC Blocking Voltage 20 20 30 40 V RMS Voltage VRMS 14 14 21 28 V Average Forward Current @ TL = 130 °C Peak Forward Surge Current** Max. Instantaneous Forward Voltage*** @ IF = 0.1 A @ IF = 1.0 A @ IF = 2.0 A @ IF = 3.0 A Max. Instantaneous Reverse Current @ VR = 40 V @ VR = 30 V @ VR = 20 V @ VR = 10 V @ VR = 5 V Thermal Resistance Junction to Lead (Anode) Junction to Tab (Cathode) Junction to Ambient Storage Temperature Junction Temperature IO 1 A IFSM 50 50 50 40 A VF 0.34 0.45 0.455 0.53 0.595 0.30 0.38 0.36 0.55 V 0.65 0.52 0.85 0.4 0.1 0.41 0.13 0.05 0.50 IR RθJL RθJTAB RθJA TSTG TJ ** Surge Current 8.3 ms single phase, half sine wave, 60 Hz (JEDEC Method). *** Pulse Test; Pulse Width = 300 uS, Duty Cycle = 2 %. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 0.0100 0.0010 0.0005 35 20 250 0.15 mA °C/W °C/W °C/W -55 to +125 °C -55 to +150 °C CD216A-B120L ~ B140 MITE Chip Diode Product Dimensions Recommended Pad Layout H A A B B K C J D Dimension A (Max.) C B (Min.) G I G F C (Min.) D (Max.) E E (Min.) E DO-216AA 2.67 (0.105) 2.54 (0.100) 1.27 (0.050) 0.635 (0.025) 0.762 (0.030) D Physical Specifications Dimension A B C D E F G H I J K (DO-216AA) 1.75 - 2.05 (0.069 - 0.081) 1.80 - 2.20 (0.071 - 0.087) 0.95 - 1.25 (0.037 - 0.049) 0.42 - 0.68 (0.017 - 0.027) 0.70 - 1.00 (0.028 - 0.039) -0.05 - +0.10 (0.002 - 0.004) 0.10 - 0.25 (0.004 - 0.010) 3.65 - 3.95 (0.144 - 0.156) 0.40 - 0.70 (0.016 - 0.028) 1.10 - 1.50 (0.043 - 0.059) 0.20 - 0.80 (0.008 - 0.060) MM DIMENSIONS: (INCHES) Case..............................................JEDEC DO-216AA Molded plastic Polarity ................................................Cathode designated by TAB 1 Weight ....................................................Approximately 0.016 grams Mounting Position ................................................................One way Typical Part Marking CD216A-B120L ..........................................................................B2L CD216A-B120R ..........................................................................B2E CD216A-B130L ..........................................................................B3L CD216A-B140 ............................................................................B4S How To Order CD 216A - B 1 20 L __ Common Code Chip Diode Package • 216A = DO-216AA Model B = Schottky Barrier Series Average Forward Current (Io) Code 1 = 1 A (Code x 1000 mA = Average Forward Current) Reverse Voltage (VR) Code 20 = 20 V 30 = 30 V 40 = 40 V Forward Voltage Suffix L = Low Forward Voltage Vf (CD216-B120L, CD216-B130L) R = Low Leakage Current IR (CD216-B120R) Terminations LF = 100 % Sn (lead free) Blank = Sn/Pb Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD216A-B120L ~ B140 MITE Chip Diode Rating and Characteristic Curves: CD216A-B120L Reverse Characteristics Forward Characteristics 100 10 Ta = 25 °C Pulsewidth: 300 µs 125 °C 10 Reverse Current (µA) Forward Current (Amps) 100 °C 1 1 0.1 25 °C 0.01 125 °C 100 °C 0.001 25 °C 0.1 0 0.0 0.2 0.4 0.6 5 10 15 20 25 0.8 Reverse Voltage (Volts) Forward Voltage (Volts) Capacitance Between Terminals Derating Curve 200 1.25 180 F = 1 MHz Ta = 25 °C 160 140 0.75 Capacitance (pF) Average Forward Current (Amps) 1.00 0.50 120 100 80 60 0.25 Single Phase Half Wave 60 Hz Resistive or Inductive Load 40 20 0.00 25 50 75 100 125 Lead Temperature (°C) 150 0 0 10 20 Reverse Voltage (Volts) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 30 40 CD216A-B120L ~ B140 MITE Chip Diode Rating and Characteristic Curves: CD216A-B120R Reverse Characteristics Forward Characteristics 10 1000 Ta = 25 °C Pulsewidth: 300 µs 125 °C 100 Reverse Current (µA) Forward Current (Amps) 100 °C 1 10 1 25 °C 0.1 125 °C 100 °C 0.01 25 °C 0 0.1 0.2 0.4 0.6 5 0.8 10 15 20 25 Reverse Voltage (Volts) Forward Voltage (Volts) Capacitance Between Terminals 1.25 150 1.00 125 F = 1 MHz Ta = 25 °C 100 0.75 Capacitance (pF) Average Forward Current (Amps) Derating Curve 0.50 75 50 0.25 Single Phase Half Wave 60 Hz Resistive or Inductive Load 25 0.00 25 50 75 100 125 150 0 Lead Temperature (°C) 0 10 20 30 40 Reverse Voltage (Volts) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD216A-B120L ~ B140 MITE Chip Diode Rating and Characteristic Curves: CD216A-B130L Reverse Characteristics Forward Characteristics 10 100 Ta = 25 °C Pulsewidth: 300 µs 125 °C 10 Reverse Current (µA) Forward Current (Amps) 100 °C 1 1 0.1 25 °C 0.01 100 °C 125 °C 0.001 25 °C 0 0.1 0 0.2 0.4 0.6 0.8 5 10 1 15 20 25 30 35 Reverse Voltage (Volts) Forward Voltage (Volts) Capacitance Between Terminals 1.25 150 1.00 125 F = 1 MHz Ta = 25 °C 100 0.75 Capacitance (pF) Average Forward Current (Amps) Derating Curve 0.50 75 50 0.25 Single Phase Half Wave 60 Hz Resistive or Inductive Load 25 0.00 25 50 75 100 125 Lead Temperature (°C) 150 0 0 10 20 Reverse Voltage (Volts) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. 30 40 CD216A-B120L ~ B140 MITE Chip Diode Rating and Characteristic Curves: CD216A-B140 Reverse Characteristics Forward Characteristics 10 10 Ta = 25 °C Pulsewidth: 300 µs 125 °C 1 Reverse Current (mA) Forward Current (Amps) 100 °C 1 0.1 0.01 25 °C 0.001 0.0001 0 100 °C 125 °C 5 10 15 20 25 30 35 40 45 Reverse Voltage (Volts) 25 °C 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage (Volts) Capacitance Between Terminals 1.25 150 1.00 125 F = 1 MHz Ta = 25 °C 100 0.75 Capacitance (pF) Average Forward Current (Amps) Derating Curve 0.50 75 50 0.25 Single Phase Half Wave 60 Hz Resistive or Inductive Load 25 0.00 25 50 75 100 Lead Temperature (°C) 125 150 0 0 10 20 30 40 Reverse Voltage (Volts) Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. CD216A-B120L ~ B140 MITE Chip Diode Packaging Information The product will be dispensed in Tape and Reel format (see diagram below). P 0 P 1 d T E Index Hole 120 ° F D2 W B D1 D P A Trailer C Device Leader ....... ....... ....... ....... ....... ....... ....... ....... End W1 Start DIMENSIONS: 10 pitches (min.) 10 pitches (min.) Direction of Feed Item Symbol Carrier Width A Carrier Length B Carrier Depth C Sprocket Hole d Reel Outside Diameter D Reel Inner Diameter D1 Feed Hole Diameter D2 Sprocket Hole Position E Punch Hole Position F Punch Hole Pitch P Sprocket Hole Pitch P0 Embossment Center P1 Overall Tape Thickness T Tape Width W Reel Width W1 Quantity per Reel -- DO-216AA 2.90 ± 0.10 (0.114 - 0.004) 5.30 ± 0.10 (0.209 - 0.004) 1.37 ± 0.10 (0.054 - 0.004) 1.55 ± 0.05 (0.061 - 0.002) 330 / 178.0 (12.992 / 7.007) 75.0 MIN. (2.953) 13.0 ± 0.20 (0.512 - 0.008) 1.75 ± 0.10 (0.069 - 0.004)) 5.50 ± 0.05 (0.217 - 0.002) 4.00 ± 0.10 (0.157 - 0.004) 4.00 ± 0.10 (0.157 - 0.004) 2.00 ± 0.05 (0.079 - 0.002) 0.40 ± 0.10 (0.016 - 0.004) 12.00 ± 0.20 (0.472 - 0.008) 18.4 MAX. (0.724) MM (INCHES) Devices are packed in accordance with EIA standard RS-481-A and specifications shown here. Reliable Electronic Solutions Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 Europe: Tel: +41-(0)41 768 5555 • Fax: +41-(0)41 768 5510 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com 3,000 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. REV. 01/05