COMCHIP SMD Schottky Barrier Diode SMD Diodes Specialist CDBF0540 (Lead-free Device) I O = 500 mA V R = 40 Volt s Features Low forward Voltage Designed for mounting on small surface. 1005(2512) Extremely thin/leadless package. 0.102(2.60) 0.095(2.40) Majority carrier conduction. 0.051(1.30) 0.043(1.10) Mechanical data Case: SOD-323F (2512) Standard package , molded plastic. 0.035(0.90) 0.027(0.70) Terminals: Gold plated, solderable per MIL-STD-750, method 2026. 0.021(0.55) Typ. Polarity: Indicated by cathode band. 0.012 (0.30) Typ. Mounting position: Any. 0.039(1.00) Typ. Weight: 0.006 gram (approximately). Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Conditions Parameter Symbol Min Typ Max Unit V RRM 40 V Reverse voltage VR 40 V Average forward rectified current Io 500 mA I FSM 5.5 A Repetitive peak reverse voltage Forward current , surge peak 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Storage temperature T STG -40 +125 C Junction temperature Tj -40 +125 C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Conditions Parameter Symbol Min Typ Max Unit VF VF VF VF IR IR IR IR 0.51 0.64 0.46 0.62 10 20 2 5 V V V V uA uA mA mA Capacitance between terminals f = 1MHz, and 0 VDC reverse voltage CT 170 pF Reverse recovery time T rr Forward voltage Reverse current IF = 0.5 A IF = 1 A IF = 0.5 A IF = 1 A VR = 20 V VR = 40 V VR = 20 V VR = 40 V @Ta=25 @Ta=25 @Ta=100 @Ta=100 @ Ta= 25 @ Ta= 25 @Ta=100 @Ta=100 C C C C C C C C I F =I R =10mA,Irr= 0.1 X I R ,R L =100 ohm 22 ns REV:A QW-A1040 Page 1 COMCHIP SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBF0540) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 10m 1000 125 C 100 Reverse current ( A ) Forward current (mA ) 1m 10 1 0.1 75 C 100u 10u 25 C 1u 100n -25 C 10n 0 0 0.1 0.2 0.3 0.4 0.5 0.6 1n 0.7 0 10 Forward voltage (V) Average forward current ( % ) Capacitance between terminals(pF) 100 80 60 40 20 0 5 10 15 Reverse voltage (V) Fig. 4 - Current derating curve 120 f=1MHz Ta = 25 C 0 40 Reverse voltage (V) Fig. 3 - Capacitance between terminals characteristics 120 30 20 20 100 80 60 40 20 0 0 25 50 75 100 125 150 Ambient temperature ( C ) REV:A QW-A1040 Page 2