SMD Schottky Barrier Diode SMD Diodes Specialist CDBUR0140R(RoHs Device) Io = 100 mA V R = 40 Volts 0603(1608) Features 0.071(1.80) 0.063(1.60) Low reverse current. Designed for mounting on small surface. 0.039(1.00) 0.031(0.80) Extremely thin / leadless package. Majority carrier conduction. Mechanical data 0.033(0.85) Case: 0603(1608) standard package, molded plastic. 0.027(0.70) 0.018(0.45) Typ. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any 0.028(0.70) Typ. Weight: 0.003 gram(approx.). Dimensions in inches and (millimeter) Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Conditions Repetitive Peak reverse voltage 45 V VR 40 V IO 100 mA I FSM 1 A V RRM Reverse voltage Average forward rectified current Forward current,surge peak Symbol Min Typ Max Unit 8.3 ms single half sine-wave superimposed on rate load (JEDEC method) Storage temperature T STG Junction temperature Tj -40 +125 O +125 O C C Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Conditions Symbol Min Typ Max Unit Forward voltage I F = 10mA VF 0.45 V Reverse current V R = 10V IR 1 uA Capacitance between terminals f = 1 MHz, and 10 VDC reverse voltage CT 6 pF REV:A QW-A1060 Page 1 SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBUR0140R) Fig. 1 - Forward characteristics Fig. 2 - Reverse characteristics 1m Reverse current ( A ) 100 C O -25 C O 1 7 5 OC 2C 5 O 10 125 Forward current (mA ) 1000 100u O 125 C 10u O 75 C 1u 100n O 25 C 10n O -25 C 0.1 1n 0 0.2 0.4 0.6 0.8 1.0 0 10 40 Reverse voltage (V) Forward voltage (V) Fig. 3 - Capacitance between terminals characteristics Fig.4 - Current derating curve 100 Average forward current(%) Capacitance between terminals ( P F) 30 20 10 100 80 60 40 20 0 1 0 5 10 15 20 25 30 Reverse voltage (V) 35 40 0 25 50 75 100 125 O Ambient temperature ( C) REV:A QW-A1060 Page 2