COMCHIP CDBM240-HF

SMD Schottky Barrier Rectifiers
CDBM220-HF Thru CDBM2100-HF
Reverse Voltage: 20 to 100 Volts
Forward Current: 2.0 Amp
RoHS Device
Halogen free
Features
Mini SMA/SOD-123
-Batch process design, excellent powe
dissipation offers better reverse leakage
current and thermal resistance.
-Low profile surface mounted application
in order to optimize board space.
-Tiny plastic SMD package.
-Low power loss, high efficiency.
-High current capability, low forward voltage dorp.
-High surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planarchip, metal silicon junction.
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
0.154(3.9)
0.138(3.5)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.126(3.2)
0.110(2.8)
0.067(1.7)
0.051(1.3)
Mechanical data
-Case: Molded plastic, JEDEC MiniSMA/SOD-123.
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight:0.027 gram(approx.).
0.035(0.9) Typ.
0.035(0.9) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings (at T =25°C unless otherwise noted)
A
Symbol
Parameter
CDBM CDBM CDBM CDBM CDBM CDBM CDBM
Unit
220-HF 230-HF 240-HF 250-HF 260-HF 280-HF 2100-HF
Repetitive peak reverse voltage
VRRM
20
30
40
50
60
80
100
V
Maximum RMS voltage
VRMS
14
21
28
35
42
56
70
V
Continuous reverse voltage
VR
20
30
40
50
60
80
100
V
Maximum forward voltage @IF=2.0A
VF
Forward rectified current
IO
2.0
A
IFSM
50
A
IR
0.5
10
mA
RθJA
85
Typ. diode junction capacitance (Note 1)
CJ
160
Operating junction temperature
TJ
Forward surge current, 8.3ms half sine wave
superimposed on rated load (JEDEC method)
Reverse current on VR=VRRM
0.50
O
@TA=25 C
O
@TA=125 C
Typ. thermal resistance, junction to ambient air
Storage temperature
-55 to +125
TSTG
0.70
V
0.85
O
C/W
pF
-55 to +150
-65 to +175
O
C
O
C
Note 1: f=1MHz and applied 4V DC reverse voltage.
REV:A
Page 1
QW-JB003
Comchip Technology CO., LTD.
SMD Schottky Barrier Rectifiers
Rating and Characteristic Curves (CDBM220-HF Thru CDBM2100-HF)
Fig.1 - Typical Forward Current
Derating Curve
Fig.2 - Typical Forward Characteristics
100
IF, Instantaneous Forward Current (A)
2.0
CDB
0
M25
0-H
M22
CDB
M2 1
F
-HF
0 0 -H
40
BM2
1.0
B
~CD
-HF
D
F~C
IO, Averaged Forward Current (A)
2.3
50
100
150
CD
1
200
0-
DB
25
BM
CD
0-
4
M2
0-H
~C
HF -
28
BM
F
M2
DB
0 -H
60
CD
F~
-H
F
21
BM
00
F
-H
0.1
O
TJ=25 C
Pulse width 300μs
1% duty cycle
O
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VF, Forward Voltage (V)
TA, Ambient Temperature ( C)
Fig.3 - Maximum Non-repetitive Peak
Forward Surge Current
Fig.4 - Typical Junction Capacitance
50
700
TJ=25 OC
8.3ms single half
sine wave, JEDEC
method
40
CJ, Junction Capacitance (pF)
IFSM, Peak Forward Surge Current (A)
22
BM
~C
HF
CD
0.01
0.1
0
0
10
30
20
10
0
600
500
400
300
200
100
0
1
10
100
.01
Number of Cycles at 60Hz
0.1
1
10
100
VR, Reverse Voltage (V)
Fig.5 - Typical Reverse Characteristics
IR, Reverse Current (mA)
100
10
1
O
TJ=75 C
.1
O
TJ=25 C
.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage (%)
REV:A
Page 2
QW-JB003
Comchip Technology CO., LTD.