TI CDCR81

CDCR81
DIRECT RAMBUS CLOCK GENERATOR
SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999
D
D
D
D
D
D
D
D
D
D
300-MHz Differential Clock Source for
Direct RAMBUS Memory Systems for an
600-MHz Data Transfer Rate
Synchronizes the Clock Domains of the
Rambus Channel With an External System
or Processor Clock
Three Power Operating Modes to Minimize
Power for Mobile and Other
Power-Sensitive Applications
Operates From a Single 3.3-V Supply and
120-mW at 300 MHz (Typ)
Packaged in a Shrink Small-Outline
Package (DBQ)
Wide Phase-Lock Input Frequency Range
33 MHz to 100 MHz
No External Components Required for PLL
Supports Independent Channel Clocking
Spread Spectrum Clocking Tracking
Capability to Reduce EMI
Designed For Use With TI’s 133-MHz Clock
Synthesizers CDC925, CDC924, CDC922
and CDC921
DBQ PACKAGE
(TOP VIEW)
VDDIR
REFCLK
VDDP
GNDP
GNDI
PCLKM
SYNCLKN
GNDC
VDDC
VDDIPD
STOPB
PWRDNB
1
24
2
23
3
22
4
21
5
20
6
19
7
18
8
17
9
16
10
15
11
14
12
13
S0
S1
VDDO
GNDO
CLK
NC
CLKB
GNDO
VDDO
MULT0
MULT1
S2
NC – No internal connection
description
The Direct Rambus clock generator (DRCG) provides the necessary clock signals to support a Direct Rambus
memory subsystem. It includes signals to synchronize the Direct Rambus channel clock to an external system
or processor clock. It is designed to support Direct Rambus memory on desktop, workstation, server and mobile
PC motherboards. DRCG also provides an off-the-shelf solution for a broad range of Direct Rambus memory
applications.
The DRCG provides clock multiplication and phase alignment for a Direct Rambus memory subsystem to
enable synchronous communication between the Rambus channel and ASIC clock domains. In a Direct
Rambus memory subsystem, a system clock source provides the REFCLK and PCLK clock references to the
DRCG and memory controller, respectively. The DRCG multiplies REFCLK and drives a high-speed BUSCLK
to RDRAMs and the memory controller. Gear ratio logic in the memory controller divides the PCLK and BUSCLK
frequencies by ratios M and N such that PCLK/M = SYNCLK/N, where SYNCLK = BUSCLK/4. The DRCG
detects the phase difference between PCLK/M and SYNCLK/N and adjusts the phase of BUSCLK such that
the skew between PCLK/M and SYNCLK/N is minimized. This allows data to be transferred across the
SYNCLK/PCLK boundary without incurring additional latency.
User control is provided by multiply and mode selection terminals. The multiply terminals provide selection of
one of four clock frequency multiply ratios, generating BUSCLK frequencies ranging from 267 MHz to 400 MHz
with clock references ranging from 33 MHz to 100 MHz. The CDCR81 meets Rambus Clock Generator,
Revision 1.0 specification up to 300 MHz. The mode select terminals can be used to select a bypass mode
where the frequency multiplied reference clock is directly output to the Rambus channel for systems where
synchronization between the Rambus clock and a system clock is not required. Test modes are provided to
bypass the PLL and output REFCLK on the Rambus channel and to place the outputs in a high-impedance state
for board testing.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Direct Rambus and Rambus are trademarks of Rambus Inc.
Copyright  1999, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
CDCR81
DIRECT RAMBUS CLOCK GENERATOR
SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999
description (continued)
The CDCR81 is characterized for operation over free-air temperatures of 0°C to 85°C.
functional block diagram
PWRDWNB
S0
S1
S2
STOPB
Test MUX
Bypass MUX
ByPCLK
PLLCLK
CLK
PLL
B
REFCLK
CLKB
Phase
Aligner
A
PACLK
φD
2
PCLKM
MULT0
MULT1
SYNCLKN
FUNCTION TABLE†
S0
S1
S2
CLK
CLKB
Normal
0
0
0
Phase aligned clock
Phase aligned clock B
Bypass
1
0
0
PLLCLK
PLLCLKB
Test
1
1
0
REFCLK
REFCLKB
Output test (OE)
0
1
X
Hi-Z
Hi-Z
Reserved
0
0
1
—
—
Reserved
1
0
1
—
—
Hi-Z
Hi-Z
MODE
Reserved
1
1
1
† X = don’t care, Hi-Z = high impedance
2
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
CDCR81
DIRECT RAMBUS CLOCK GENERATOR
SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999
Terminal Functions
TERMINAL
NAME
NO.
I/O
DESCRIPTION
CLK
20
O
Output clock
CLKB
18
O
Output clock (complement)
GNDC
8
GND for phase aligner
GNDI
5
GND for control inputs
GNDO
17, 21
GND for clock outputs
GNDP
4
MULT0
15
I
PLL multiplier select
MULT1
14
I
PLL multiplier select
NC
19
GND for PLL
Not used
PCLKM
6
I
Phase detector input
PWRDNB
12
I
Active low power down
REFCLK
2
I
Reference clock
S0
24
I
Mode control
S1
23
I
Mode control
S2
13
I
Mode control
STOPB
11
I
Active low output disable
SYNCLKN
7
I
Phase detector input
VDDC
VDDIPD
9
10
VDD for phase aligner
Reference voltage for phase detector inputs and STOPB
1
Reference voltage for REFCLK
VDDIR
VDDO
16, 22
VDDP
3
VDD for clock outputs
VDD for PLL
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3
CDCR81
DIRECT RAMBUS CLOCK GENERATOR
SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999
PLL divider selection
Table 1 lists the supported REFCLK and BUSCLK frequencies. Other REFCLK frequencies are permitted,
provided that (267 MHz < BUSCLK < 400 MHz) and (33 MHz < REFCLK < 100 MHz).
Table 1. REFCLK and BUSCLK Frequencies
MULT0
MULT1
REFCLK
(MHz)
MULTIPLY
RATIO
BUSCLK
(MHz)
0
0
67
4
267
0
1
50
6
300
0
1
67
6
400
1
1
33
8
267
1
1
50
8
400
1
0
100
8/3
267
clock output driver states
Table 2. Clock Output Driver States
STATE
PWRDNB
STOPB
CLK
CLKB
Powerdown
0
X
GND
GND
CLK stop
1
0
Normal
1
1
VX, STOP
PACLK/PLLCLK/
REFCLK†
VX, STOP
PACLKB/PLLCLKB/
REFCLKB
† Depending on the state of S0, S1, and S2.
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†
Supply voltage range, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to 4 V
Output voltage range, VO, at any output terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to VDD + 0.5 V
Input voltage range,VI, at any input terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 V to VDD + 0.5 V
ESD rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TBD
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see Dissipation Rating Table
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 85°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to the GND terminals.
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C‡
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
DBQ
1400 mW
11 mW/°C
905 mW
740 mW
‡ This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.
4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
CDCR81
DIRECT RAMBUS CLOCK GENERATOR
SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999
recommended operating conditions
Supply voltage, VDD
High-level input voltage, VIH (CMOS)
MIN
NOM
MAX
UNIT
3.135
3.3
3.465
V
0.7×VDD
Low-level input voltage, VIL (CMOS)
Initial phase error at phase detector inputs
(required range for phase aligner)
– 0.5×tc(PD)
REFCLK low-level input voltage, VIL
REFCLK high-level input voltage, VIH
V
0.3×VDD
0.5×tc(PD)
V
0.3×VDDIR
V
0.7×VDDIR
Input signal low voltage, VIL (STOPB)
V
0.3×VDDIPD
Input signal high voltage, VIH (STOPB)
Input reference voltage for (REFCLK) (VDDIR)
Input reference voltage for (PCLKM and SYSCLKN) (VDDIPD)
0.7×VDDIPD
1.235
3.465
1.235
3.465
V
V
V
V
High-level output current, IOH
–16
mA
Low-level output current, IOL
16
mA
85
°C
Operating free-air temperature, TA
0
timing requirements
Input cycle time, tc(in)
MIN
MAX
10
40
ns
250
ps
40%
60%
30
33
Input cycle-to-cycle jitter
Input duty cycle over 10,000 cycles
Input frequency modulation, fmod
Modulation index, non-linear maximum 0.5%
UNIT
kHz
0.6%
Phase detector input cycle time (PCLKM and SYNCLKN)
Input slew rate, SR
Input duty cycle (PCLKM and SYNCLKN)
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
30
100
1
4
25%
75%
ns
V/ns
5
CDCR81
DIRECT RAMBUS CLOCK GENERATOR
SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
TEST CONDITIONS†
PARAMETER
MIN
TYP‡
MAX
UNIT
VO(STOP)
Output voltage during CLK Stop (StopB=0)
See Figure 1
1.1
2
VO(X)
VO
Output crossing-point voltage
See Figures 1 and 6
1.3
1.8
V
Output voltage swing
See Figure 1
0.4
0.6
V
VIK
Input clamp voltage
VDD = 3.135 V,
See Figure 1
–1.2
V
VOH
VOL
IOH
IOL
High-level output voltage
Low-level output voltage
High-level output current
2
VDD = min to max,
IOH = –1 mA
VDD = 3.135 V,
See Figure 1
IOH = –16 mA
VDD = min to max,
VDD = 3.135 V,
IOL = 1 mA
IOL = 16 mA
VDD = 3.135 V,
VDD = 3.3 V,
VDD = 3.465 V,
VO = 1 V
VO = 1.65 V
VDD = 3.135 V,
VDD = 3.3 V,
VDD = 3.465 V,
Low-level output current
II = –18 mA
VO = 3.135 V
VO = 1.95 V
S0 = 0,
IOZ(STOP)
High-impedance-state output current
during CLK stop
Stop= 0, VO = GND or VDD
IOZ(PD)
High-impedance-state output current in
powerdown state
PWDNB= 0,
VO = GND or VDD
IIH
g
High-level
input
current
ZO
Output impedance
Reference current
0.1
–32
–52
mA
–51
–14.5
43
–21
61.5
mA
65
25.5
S1 = 1
–10
36
± 10
µA
± 100
µA
100
µA
VDD = 3.465 V,
VI = VDD
10
PWRDNB, S0, S1,
S2, MULT0, MULT1
VDD = 3.465 V,
VI = VDD
10
REFCLK, PCLKM,
SYNCLKN, STOPB
VDD = 3.465 V,
VI = 0
–10
PWRDNB, S0, S1,
S2, MULT0, MULT1
VDD = 3.465 V,
VI = 0
–10
High state
RI at IO –14.5 mA to –16.5 mA
15
26
40
Low state
RI at IO 14.5 mA to 16.5 mA
11
17
35
VDDIR
IR, VDDIPD
VDD = 3.465
3 465 V,
V
Input capacitance
CO
Output capacitance
IDD(PD)
Supply current in powerdown state
V
0.5
REFCLK, PCLKM,
SYNCLKN, STOPB
CI
µA
µA
50
µA
PWRDNB = 1
0.5
mA
VI = VDD or GND
VO = VDD or GND
REFCLK = 0 MHz to 100 MHz,
PWDNB = 0,
STOPB = 1
POST OFFICE BOX 655303
Ω
PWRDNB = 0
IDD(CLKSTOP) Supply current in CLK stop state
BUSCLK configured for 400 MHz
IDD(NORMAL)
Supply current in normal state
BUSCLK = 400 MHz
† VDD refers to any of the following; VDD, VDDIPD, VDDIR, VDDO, VDDC, and VDDP
‡ All typical values are at VDD = 3.3 V, TA = 25°C.
6
2.4
VO = 1.65 V
VO = 0.4 V
High-impedance-state output current
IIL
V
1
IOZ
Low-level input
current
VDD–
0.1 V
• DALLAS, TEXAS 75265
1.8
pF
3.1
pF
200
µA
30
mA
70
mA
CDCR81
DIRECT RAMBUS CLOCK GENERATOR
SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999
switching characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER
tc(out)
Clock output cycle time
t(jitter)
Total cycle jitter over 1, 2,
3, 4, 5, or 6 clock cycles
TEST CONDITIONS
Stopped phase
alignment
267 MHz –
400 MHz
Infinite phase
alignment
267 MHz
300 MHz
See Figure 3
PLL output phase error when tracking SSC
Dynamic phase error
t(DC)
Output duty cycle over 10,000 cycles
See Figure 4
267 MHz –
400 MHz
–50
300 MHz
ns
60
ps
ps
50
ps
–100
100
ps
45%
55%
See Figure 5
50
267 MHz
IInfinite
fi it phase
h
alignment
UNIT
3.75
70
Static phase error
Stopped phase
alignment
MAX
80
See Figure 3
Phase detector phase error for distributed loop
t(DC, err)
TYP†
2.5
t(phase)
t(phase, SSC)
Output cycle-to-cycle
duty cycle error
MIN
ps
70
See Figure 5
80
400 MHz
ps
90
tr, tf
Output rise and fall times (measured at 20%-80% of
output voltage)
See Figure 7
∆t
Difference between rise and fall times on a single device
(20%–80%) |tf – tr|
See Figure 7
200
450
ps
100
ps
† All typical values are at VDD = 3.3 V, TA = 25°C.
state transition latency specifications
PARAMETER
t(powerup)
(
)
t(VDDpowerup))
Delay time, PWRDNB↑ to CLK/CLKB output
settled (excluding t(DISTLOCK))
Delay time, PWRDNB↑ to internal PLL and
clock are on and settled
FROM
TO
Powerdown
Normal
VDD
Normal
Delay time, powerup to CLK/CLKB output
settled
MULT0 and MULT1 change to CLK/CLKB
output resettled (excluding t(DISTLOCK))
t(CLKON)
See Figure 8
MIN
TYP†
MAX
UNIT
3
ms
3
See Figure 8
Delay time, powerup to internal PLL and clock
are on and settled
t(MULT)
TEST
CONDITIONS
3
ms
3
Normal
Normal
See Figure 9
1
ms
STOPB↑ to CLK/CLKB glitch-free clock edges
CLK
Stop
Normal
See Figure 10
10
ns
t(CLKSETL)
STOPB↑ to CLK/CLKB output settled to within
50 ps of the phase before STOPB was disabled
CLK
Stop
Normal
See Figure 10
20
cycles
t(CLKOFF)
STOPB↑ to CLK/CLKB output disabled
Normal
CLK
Stop
See Figure 10
5
ns
t(powerdown)
Delay time, PWRDNB↓ to the device in powerdown mode
STOPB
Powerdown
1
ms
t(STOP)
Maximum time in CLKSTOP (STOPB = 0)
before re-entering normal mode (STOPB = 1)
STOPB
Normal
100
µs
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
7
CDCR81
DIRECT RAMBUS CLOCK GENERATOR
SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999
state transition latency specifications (continued)
PARAMETER
FROM
TO
t(ON)
Minimum time in normal mode (STOPB = 1)
before re-entering CLKSTOP (STOPB = 0)
Normal
CLK
stop
t(DISTLOCK)
Time from when CLK/CLKB output is settled to
when the phase error between SYNCLKN and
PCLKM falls within t(ERR-PD)
Unlocked
Locked
TEST
CONDITIONS
MIN
TYP†
100
68 Ω, ±5%
39 Ω, ±5%
RT = 28 Ω
39 Ω, ±5%
68 Ω, ±5%
RT = 28 Ω
100 pF
10 pF
Figure 1. Test Load and Voltage Definitions (VO(STOP), VO(X), VO, VOH, VOL)
CLK
CLKB
tc1
tc2
Cycle-to-cycle jitter = | tc1 – tc2| over 10000 consecutive cycles
Figure 2. Cycle-to-Cycle Jitter
CLK
CLKB
tc3
tc4
Cycle-to-cycle jitter = | tc3 – tc4| over 10000 consecutive cycles
Figure 3. Short Term Cycle-to-Cycle Jitter over 4 Cycles
8
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
UNIT
ms
5
PARAMETER MEASUREMENT INFORMATION
10 pF
MAX
ms
CDCR81
DIRECT RAMBUS CLOCK GENERATOR
SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999
PARAMETER MEASUREMENT INFORMATION
CLK
CLKB
tpd1
tc5
Duty cycle = (tPd1/tc5)
Figure 4. Output Duty Cycle
CLK
CLKB
tpd2
tpd3
tc6
tc7
Duty cycle error = tpd2 – tpd3
Figure 5. Duty Cycle Error (Cycle-to-Cycle)
CLK
VO(X)+
VO(X), nom
VO(X)–
CLKB
Figure 6. Crossing-Point Voltage
VOH
80%
20%
VOL
tr
tf
Figure 7. Voltage Waveforms
PWRDNB
CLK/CLKB
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
tpowerdown
tpowerup
Figure 8. PWRDNB Transition Timings
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
ÎÎ
ÎÎ
9
CDCR81
DIRECT RAMBUS CLOCK GENERATOR
SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999
PARAMETER MEASUREMENT INFORMATION
MULT0 and/or
MULT1
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
CLK/CLKB
tMULT
Figure 9. MULT Transition Timings
tON
tSTOP
STOPB
tCLKSETL
tCLKON
(see Note A)
CLK/CLKB
ÎÎÎÎ
ÎÎÎÎ
Output clock
not specified
glitches ok
Clock enabled
and glitch free
ÎÎ
ÎÎ
Clock output settled
within 50 ps of the
phase before disabled
NOTE A: Vref = VO ± 200 mV
Figure 10. STOPB Transition Timings
10
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
tCLKOFF
(see Note A)
CDCR81
DIRECT RAMBUS CLOCK GENERATOR
SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999
PARAMETER MEASUREMENT INFORMATION
HIGH-LEVEL OUTPUT CURRENT
vs
HIGH-LEVEL OUTPUT VOLTAGE
I OH – High-Level Output Current – A
0
–0.02
Weak
–0.04
Rambus (min)
–0.06
Nom
–0.08
Strong
–0.1
Rambus (max)
–0.12
0
0.5
1
1.5
2
2.5
3
3.5
4
VOH – High-Level Output Voltage – V
Figure 11. Pullup IBIS I/V Chart
LOW-LEVEL OUTPUT CURRENT
vs
LOW-LEVEL OUTPUT VOLTAGE
I OL – Low-Level Output Current – A
0.12
0.1
Rambus (max)
0.08
Strong
0.06
Nom
0.04
Weak
0.02
Rambus (min)
0
0
0.5
1
1.5
2
2.5
3
3.5
4
VOL – Low-Level Output Voltage – V
Figure 12. Pulldown IBIS I/V Chart
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
11
CDCR81
DIRECT RAMBUS CLOCK GENERATOR
SCAS606B – NOVEMBER 1998 – REVISED NOVEMBER 1999
MECHANICAL DATA
DBQ (R-PDSO-G**)
PLASTIC SMALL-OUTLINE PACKAGE
24–PIN SHOWN
0.012 (0,30)
0.008 (0,20)
0.025 (0,64)
24
0.005 (0,13) M
13
0.244 (6,20)
0.228 (5,80)
0.008 (0,20) NOM
0.157 (3,99)
0.150 (3,81)
1
Gage Plane
12
A
0.010 (0,25)
0°– 8°
0.035 (0,89)
0.016 (0,40)
Seating Plane
0.069 (1,75) MAX
0.010 (0,25)
0.004 (0,10)
0.004 (0,10)
PINS **
16
20
24
A MAX
0.197
(5,00)
0.344
(8,74)
0.344
(8,74)
A MIN
0.188
(4,78)
0.337
(8,56)
0.337
(8,56)
DIM
4073301/C 02/97
NOTES: A.
B.
C.
D.
12
All linear dimensions are in inches (millimeters).
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion not to exceed 0.006 (0,15).
Falls within JEDEC MO-137
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright  1999, Texas Instruments Incorporated