CHR2297 RoHS COMPLIANT 36-44GHz Multifunction Down-Converter GaAs Monolithic Microwave IC Description The CHR2297 is a multifunction chip (MFC) which integrates a LO buffer amplifier, an IF amplifier and a single cold FET mixer. It is usable for down-conversion. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Down converter RF LO IF Conversion Gain 10 9 8 Main Features Conversion Gain (dB) 7 ■ Broadband performance: 36-44GHz ■ 2.5dB conversion gain ■ 0dBm LO input power ■ +4dBm input power (1dB gain comp.) ■ DC power consumption, 65mA @ 4V ■ Chip size: 1.33x1.68x0.10mm 6 5 4 3 2 F_IF= 2GHz 1 F_IF= 6GHz 0 34 35 36 37 38 39 40 41 42 43 44 45 46 RF Frequency (GHz) Main Characteristics Tamb.=+25°C Symbol Parameter FRF RF frequency range FLO LO frequency range FIF IF frequency range Gc Conversion Gain Min 36 30 2 Typ Max 44 39 6 2.5 Unit GHz GHz GHz dB ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref.: DSCHR22970204 - 23 Jul 10 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 36-44GHz MFC Down-Converter CHR2297 Electrical Characteristics Tamb=+25°C Symbol Parameter Min Typ Max Unit FRF RF frequency range 36 44 GHz FLO LO frequency range 30 39 GHz FIF IF frequency range 2 6 GHz Gc Conversion Gain 2.5 dB PLO LO Input power 0 dBm LO_IF Lk LO Leakage on IF (for PLO=0dBm) -28 dBm LO_RF Lk LO Leakage on RF (for PLO=0dBm) -22 dBm RF_IF Lk RF Leakage on IF (for PRF=-5dBm) -50 dBm +4 dBm P1dB Input power at 1dB gain compression LO Match LO Matching (1) 2.0:1 RF Match RF Matching (1) 2.0:1 IF Match IF Matching 2.0:1 Vd Drain bias voltage (pads Vd1, Vd2) 4 V Vg Gate bias voltage (pad Vg) -1 V Id Drain bias current 65 mA (1) A wire bond of typically 0.1 to 0.15 nH will improve the input and output matching. Absolute Maximum Ratings (1) Tamb = +25°C Symbol Parameter Values Unit Vd Drain bias voltage 4.5 V Id Drain bias current 100 mA PLO Maximum LO input power 5 dBm Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of device above anyone of these parameters may cause permanent damage. Ref.: DSCHR22970204 - 23 Jul 10 2/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-44GHz MFC Down-Converter CHR2297 Typical on wafer measurement Tamb: 25°C, Vd=4V, Vg= -1V, P LO= 0dBm Conversion gain versus RF frequency 10 9 8 Conversion Gain (dB) 7 6 5 4 3 2 F_IF= 2GHz 1 F_IF= 6GHz 0 34 35 36 37 38 39 40 41 42 43 44 45 46 RF Frequency (GHz) Conversion gain versus RF input power 10 RF=36GHz, IF=2GHz RF=40GHz, IF=2GHz RF=36GHz, IF=6GHz RF=40GHz, IF=6GHz RF=44GHz, IF=6GHz 9 8 Conversion Gain (dB) 7 6 5 4 3 2 1 0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 RF input power (dBm) Ref.: DSCHR22970204 - 23 Jul 10 3/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-44GHz MFC Down-Converter CHR2297 LO Leakage on RF port 0 LO Leakage on RF port (dBm) -5 F_IF= 2GHz F_IF= 6GHz -10 -15 -20 -25 -30 -35 -40 34 35 36 37 38 39 40 41 42 43 44 45 46 45 46 RF Frequency (GHz) LO Leakage on IF port 0 -5 F_IF= 2GHz F_IF= 6GHz LO Leakage on IF port (dBm) -10 -15 -20 -25 -30 -35 -40 34 35 36 37 38 39 40 41 42 43 44 RF Frequency (GHz) Ref.: DSCHR22970204 - 23 Jul 10 4/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-44GHz MFC Down-Converter CHR2297 Recommanded assembly plan 25µm wedge bonding is recommended Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Ref.: DSCHR22970204 - 23 Jul 10 5/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-44GHz MFC Down-Converter CHR2297 Mechanical data Tol: ±35µm (Chip thickness: 100µm. All dimensions are in micrometers) Ordering Information Chip form : CHR2297-98F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref.: DSCHR22970204 - 23 Jul 10 6/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice