CHR2296 RoHS COMPLIANT 36-40GHz Integrated Down Converter GaAs Monolithic Microwave IC Description LO The CHR2296 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Q GM GB VDM VDL GX VGA RF Typical on wafer measurement: Conversion Gain & Image suppression @ IF=1GHz Conversion Gain & Image suppression (dB) Main Features I Broadband performances: 36-40GHz 11 dB conversion gain 5dB noise figure, for IF>0.1GHz 10dBm LO input power -10dBm RF input power (1dB gain comp.) Low DC power consumption, [email protected] Chip size: 2.49 X 1.97 X 0.10mm 16 12 8 4 0 -4 -8 Gc_channel_inf_rfGc_channel_inf_rf+ -12 Gc_channel_sup_rfGc_channel_sup_rf+ -16 -20 -24 -28 34 35 36 37 38 2*LO Frequency (GHz) 39 Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit FRF RF frequency range 36 40 GHz FLO LO frequency range 17 20 GHz FIF IF frequency range DC 1.5 GHz Gc Conversion gain 9 11 dB ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHR22961192 - 11 Jul 11 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 40 36-40GHz Down Converter CHR2296 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V Symbol Parameter Min Typ Max Unit FRF RF frequency range 36 40 GHz FLO LO frequency range 17 20 GHz FIF IF frequency range DC 1.5 GHz Gc (1) Conversion gain NF Noise Figure, for IF>0.1GHz PLO LO Input power Img Sup P1dB 9 (1) Image Suppression 13 Input power at 1dB gain compression 11 dB 5 dB +10 dBm 15 dBc -10 dBm LO VSWR Input LO VSWR (1) 2.0:1 RF VSWR Input RF VSWR (1) 3.0:1 Id Bias current (2) 110 mA (1) On Wafer measurements (2) Current source biasing network is recommended. Optimum performances for Idm = 50mA and Idl = 60mA Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum drain bias voltage 4.0 V Id Maximum drain bias current 200 mA Vg Gate bias voltage -2.0 to +0.4 V Vgd Minimum negative gate drain voltage ( Vg – Vd) -5 V Pin Maximum peak input power overdrive (2) +15 dBm Tch Maximum channel temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHR22961192 - 11 Jul 11 2/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Down Converter CHR2296 Typical On-wafer Measurements Conversion Gain & Image suppression (dB) Bias Conditions : Vdm= Vdl= 3.5 V, Vgm= -0.9V, Vgb= -0.4V, Vgx= -0.8V, Vga= -0.5V 16 12 8 4 0 -4 -8 Gc_channel_inf_rfGc_channel_inf_rf+ -12 Gc_channel_sup_rfGc_channel_sup_rf+ -16 -20 -24 -28 34 35 36 37 38 2*LO Frequency (GHz) 39 40 Conversion gain & Image suppression with a 90° IQ combiner @ IF=1GHz 12 10 8 6 4 2 0 -2 -4 Freq. RF= 38GHz Freq LO= 18.5GHz -6 -8 Conversion Gain_I (dB) IF_power_I (dBm) -10 Conversion Gain_Q (dB) IF_power_Q (dBm) -12 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 Input RF power (dBm) Input RF compression by channel Ref. : DSCHR22961192 - 11 Jul 11 3/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 0 36-40GHz Down Converter CHR2296 Chip Assembly and Mechanical Data LO IN Q OUT To Vgm DC Gate Supply To Vgb DC Gate Supply To Vdm,Vdl DC Drain Supply I OUT To Vgx DC Gate Supply To Vga DC Gate Supply RF IN Note: Supply feed should be bypassed. 25µm diameter gold wire is recommended Bonding pad positions (Chip thickness: 100µm. All dimensions are in micrometers) Ref. : DSCHR22961192 - 11 Jul 11 4/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Down Converter CHR2296 Notes Ref. : DSCHR22961192 - 11 Jul 11 5/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 36-40GHz Down Converter CHR2296 Recommended ESD management Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD sensitivity and handling recommendations for the UMS products. Ordering Information Chip form: CHR2296-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHR22961192 - 11 Jul 11 6/6 Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice