CMPT8099 NPN CMPT8599 PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT8099 and CMPT8599 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose audio amplifier applications. MARKING CODES: CMPT8099: CKB CMPT8599: C2W SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA CMPT8099 80 80 6.0 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMPT8099 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=80V 0.1 IEBO VBE=6.0V 0.1 IEBO VBE=4.0V BVCBO IC=100µA 80 BVCEO IC=10mA 80 BVEBO IE=10µA 6.0 VCE(SAT) IC=100mA, IB=5.0mA 0.4 VCE(SAT) IC=100mA, IB=10mA 0.3 VBE(ON) VCE=5.0V, IC=10mA 0.6 0.8 hFE VCE=5.0V, IC=1.0mA 100 300 hFE VCE=5.0V, IC=10mA 100 hFE VCE=5.0V, IC=100mA 75 fT VCE=5.0V, IC=10mA, f=100MHz 150 Cob VCB=10V, IE=0, f=1.0MHz 6.0 Cib VBE=0.5V, IC=0, f=1.0MHz 25 CMPT8599 80 80 5.0 500 350 -65 to +150 357 CMPT8599 MIN MAX 0.1 0.1 80 80 5.0 0.4 0.3 0.6 0.8 100 300 100 75 150 4.5 30 UNITS V V V mA mW °C °C/W UNITS µA µA µA V V V V V V MHz pF pF R5 (1-February 2010) CMPT8099 NPN CMPT8599 PNP SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODES: CMPT8099: CKB CMPT8599: C2W R5 (1-February 2010) w w w. c e n t r a l s e m i . c o m