CMUDM8004 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM8004 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE: 84C SOT-523 CASE APPLICATIONS: • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Devices FEATURES: • ESD Protection up to 2kV • Low rDS(on) • Low Threshold Voltage • Logic Level Compatible • Small, SOT-523 Surface Mount Package • Complimentary N-Channel MOSFET: CMUDM7004 MAXIMUM RATING: (TA=25°C) Drain-Source Voltage SYMBOL VDS • Devices are Halogen Free by design Gate-Source Voltage VGS ID Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature PD TJ, Tstg BVDSS VDS=30V, VGS=0 VGS=0, ID=100μA VGS(th) VSD VDS=VGS, ID=250μA VGS=0, IS=100mA rDS(ON) rDS(ON) VGS=4.5V, ID=430mA VGS=2.5V, ID=200mA rDS(ON) VGS=1.8V, ID=100mA Qg(tot) VDS=10V, VGS=4.5V, ID=1.0A VDS=10V, VGS=4.5V, ID=1.0A VDS=10V, VGS=4.5V, ID=1.0A Qgs Qgd gFS Crss Ciss Coss VDS =10V, ID=100mA VDS=25V, VGS=0, f=1.0MHz VDS=25V, VDS=25V, VGS=0, f=1.0MHz VGS=0, f=1.0MHz UNITS V 8.0 V 450 mA 250 mW -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=8.0V, VDS=0 IDSS 30 MAX 3.0 UNITS μA 1.0 μA 30 V 0.5 1.0 V 1.1 V 1.1 Ω 2.0 Ω 3.3 Ω 0.880 nC 0.384 nC 0.128 nC 200 mS 10 pF 55 pF 15 pF R1 (7-December 2010) CMUDM8004 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-523 CASE - MECHANICAL OUTLINE PIN CONFIGURATION (Bottom View) LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 84C R1 (7-December 2010) w w w. c e n t r a l s e m i . c o m