Preliminary Datasheet CR5AS-12A 600V - 5A - Thyristor Medium Power Use R07DS0332EJ0300 Rev.3.00 Jan 23, 2013 Features Non-Insulated Type Plannar Type IT (AV) : 5 A VDRM : 600 V IGT : 100 A Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) PRSS0004ZD-D (Package name: DPAK(L)-(3)) 4 4 2, 4 12 3 3 1 2 1 1. 2. 3. 4. Cathode Anode Gate Anode 3 Applications Switching mode power supply, regulator for autocycle, protective circuit for TV sets, VCRs, and printers, igniter for autocycle, electric tool, strobe flasher, and other general purpose control applications Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltageNote1 DC off-state voltageNote1 Symbol VRRM VRSM VR (DC) VDRM VD (DC) Voltage class 12 600 720 480 600 480 Unit V V V V V Notes: 1. With gate to cathode resistance RGK = 220 . R07DS0332EJ0300 Rev.3.00 Jan 23, 2013 Page 1 of 8 CR5AS-12A Parameter RMS on-state current Average on-state current Preliminary Symbol IT (RMS) IT (AV) Ratings 7.8 5 Unit A A ITSM 90 A I2t 33 A2s PGM PG (AV) VFGM VRGM IFGM Tj Tstg — — 0.5 0.1 6 6 0.3 – 40 to +125 – 40 to +125 0.32 0.36 W W V V A °C °C g g Symbol Min. Typ. Max. Unit Repetitive peak reverse current IRRM — — 1.0 mA Tj = 125°C, VRRM applied, RGK = 220 Repetitive peak off-state current IDRM — — 1.0 mA Tj = 125°C, VDRM applied, RGK = 220 On-state voltage VTM — — 1.8 V Gate trigger voltage Gate non-trigger voltage VGT VGD — 0.1 — — 0.8 — V V Gate trigger current Holding current IGT IH 1 — — 3.5 100 — A mA Thermal resistance Rth (j-c) — — 3.0 °C/W Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine half wave 180° conduction, Tc = 88°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current MP-3A, Typical value DPAK(L)-(3), Typical value Electrical Characteristics Parameter Test conditions Tc = 25°C, ITM = 15 A, instantaneous value Tj = 25°C, VD = 6 V, IT = 0.1 A Tj = 125°C, VD = 1/2 VDRM, RGK = 220 Tj = 25°C, VD = 6 V, IT = 0.1 A Tj = 25°C, VD = 12 V, RGK = 220 Junction to caseNote2 Notes: 2. The measurement point for case temperature is at anode tab. R07DS0332EJ0300 Rev.3.00 Jan 23, 2013 Page 2 of 8 CR5AS-12A Preliminary Performance Curves Maximum On-State Characteristics 100 Tc = 25°C Surge On-State Current (A) On-State Current (A) 102 Rated Surge On-State Current 101 100 10−1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 × 100 (%) VGD = 0.1V 10−1 100 101 102 Gate Trigger Voltage (V) 101 102 103 VD = 6V RL = 60Ω 102 101 Typical Example 100 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) 1.0 Typical Distribution 0.8 0.6 Typical Example 0.2 VD = 6V RL = 60Ω –40 Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 10−1 0 40 80 120 Junction Temperature (°C) R07DS0332EJ0300 Rev.3.00 Jan 23, 2013 160 Transient Thermal Impedance (°C/W) Gate Voltage (V) PGM = 0.5W IGT = 100µA IFGM = 0.3A (Tj = 25°C) 0 0 100 Gate Trigger Current vs. Junction Temperature VGT = 0.8V 0.4 20 Gate Characteristics VFGM = 6V 10−2 40 Conduction Time (Cycles at 60Hz) PG(AV) = 0.1W 100 60 On-State Voltage (V) 102 101 80 100 103 101 102 103 Junction to ambient 102 101 100 −3 10 Junction to case 10−2 10−1 100 Time (s) Page 3 of 8 CR5AS-12A Preliminary Allowable Case Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 14 90° 120° 12 60° 10 8 6 θ = 30° θ 4 360° 2 0 160 180° Case Temperature (°C) Average Power Dissipation (W) 16 1 2 3 4 5 6 7 Resistive, inductive loads 100 80 60 40 0 8 θ = 30° 90° 0 1 2 3 180° 120° 4 5 6 7 8 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) 140 θ 120 360° Resistive, inductive loads Natural convection 100 80 60 θ = 30° 40 60° 90° 120° 20 180° 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Ambient Temperature (°C) 160 140 θ 120 360° Resistive, inductive loads Natural convection 100 80 60 θ = 30° 60° 90° 20 120° 180° 0 0 2 1 Aluminum Board 80×80×t2.3 40 3 4 5 6 8 7 Average On-State Current (A) Average On-State Current (A) Maximum Average Power Dissipation (Single-Phase Full Wave) Allowable Case Temperature vs. Average On-State Current (Single-Phase Full Wave) 16 160 14 140 θ 120 360° Resistive loads θ 12 θ Case Temperature (°C) Ambient Temperature (°C) 360° 60° 160 Average Power Dissipation (W) θ 120 20 Resistive, inductive loads 0 140 180° 360° 10 Resistive loads 8 90° θ = 30° 60° 120° 6 4 2 0 100 80 60 40 θ = 30° 20 0 1 2 3 4 5 6 7 Average On-State Current (A) R07DS0332EJ0300 Rev.3.00 Jan 23, 2013 8 θ 0 0 1 2 60° 90° 120° 180° 3 4 5 6 8 7 Average On-State Current (A) Page 4 of 8 CR5AS-12A Preliminary 160 140 140 θ 360° Resistive loads Natural convection 100 80 60 θ = 30° 60° 40 90° 120° 20 180° 0 θ Resistive loads Natural convection 100 80 θ = 30° 60° 90° 120° 180° 60 40 20 0 1 2 3 4 5 6 7 Average On-State Current (A) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Gate to Cathode Resistance Typical Example RGK = 220Ω 140 120 100 80 60 40 20 160 θ 360° Average On-State Current (A) 160 0 –40 Aluminum Board 80×80×t2.3 120 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 40 80 120 160 Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 220Ω) × 100 (%) × 100 (%) Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) × 100 (%) θ 120 Ambient Temperature (°C) 160 0 Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = 1V/μs) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 8 103 Typical Example Tj = 125°C 102 101 100 −2 10 10−1 100 101 Junction Temperature (°C) Gate to Cathode Resistance (kΩ) Breakover Voltage vs. Rate of Rise of Off-State Voltage Holding Current vs. Junction Temperature Typical Example 140 102 Tj = 125°C RGK = 220Ω VD = 12V RGK = 220Ω Holding Current (mA) Ambient Temperature (°C) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 120 100 80 60 40 Typical Distribution 103 100 Typical Example 20 0 100 101 102 103 Rate of Rise of Off-State Voltage (V/μs) R07DS0332EJ0300 Rev.3.00 Jan 23, 2013 10−1 –40 0 40 80 120 160 Junction Temperature (°C) Page 5 of 8 Preliminary 400 Tj = 25°C Typical Example 300 200 100 0 10−2 10−1 100 101 Gate to Cathode Resistance (kΩ) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) Holding Current (RGK = rΩ) Holding Current (RGK = 220Ω) × 100 (%) Holding Current vs. Gate to Cathode Resistance × 100 (%) CR5AS-12A Repetitive Peak Reverse Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Junction Temperature (°C) × 100 (%) 104 Gate Trigger Current (tw) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 102 VD = 6V RL = 60Ω Ta = 25°C 101 0 10 101 102 103 Gate Current Pulse Width (μs) R07DS0332EJ0300 Rev.3.00 Jan 23, 2013 Page 6 of 8 CR5AS-12A Preliminary Package Dimensions Previous Code TMP3 0.76 ± 0.2 Unit: mm 2.3 0.5 ± 0.2 0.1 ± 0.1 2.5Min 1Max 6.1 ± 0.2 6.6 5.3 ± 0.2 MASS[Typ.] 0.32g 1.4 ± 0.2 RENESAS Code PRSS0004ZG-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.76 0.5 ± 0.2 Package Name DPAK(L)-(3) JEITA Package Code ⎯ 1 2.3 2.3 ± 0.2 RENESAS Code PRSS0004ZD-D Previous Code DPAK(L)-(3)/DPAK(L)-(3)V MASS[Typ.] 0.36g Unit: mm 6.5 ± 0.5 2.3 ± 0.2 5.4 ± 0.5 1.2 ± 0.3 16.2 ± 0.5 (1.3) 1.15 ± 0.1 0.8 ± 0.1 0.6 ± 0.1 0.6 ± 0.1 4.7 ± 0.5 6.9 ± 0.5 5.5 ± 0.5 8.2 ± 0.6 0.55 ± 0.1 0.55 ± 0.1 0.55 ± 0.1 2.29 R07DS0332EJ0300 Rev.3.00 Jan 23, 2013 2.29 0.55 ± 0.1 Page 7 of 8 CR5AS-12A Preliminary Ordering Information Orderable Part Number CR5AS-12A#B01 CR5AS-12A#C04 CR5AS-12A#C05 CR5AS-12A-T13#B01 CR5AS-12A-T13#C04 CR5AS-12A-T13#C05 CR5AS-12A-A1#B00 CR5AS-12A-BA1#B00 CR5AS-12A-EA1#B00 Packing Tube Tube Tube Embossed Tape Embossed Tape Embossed Tape Tube Tube Tube Quantity 75 pcs. 75 pcs. 75 pcs. 3000 pcs. 3000 pcs. 3000 pcs. 80 pcs. 80 pcs. 80 pcs. Package MP-3A MP-3A MP-3A MP-3A MP-3A MP-3A DPAK(L)-(3) DPAK(L)-(3) DPAK(L)-(3) IGT 1-100 A 20-50 A 20-100 A 1-100 A 20-50 A 20-100 A 1-100 A 20-50 A 20-100 A Note : Please confirm the specification about the shipping in detail. R07DS0332EJ0300 Rev.3.00 Jan 23, 2013 Page 8 of 8 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. 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