IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-92 Plastic Package CSA733 PNP SILICON PLANAR EPITAXIAL TRANSISTOR Low Frequency Amplifier Complementary to CSC945 B EC DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 5 DEG 1,14 1,14 12,70 1.982 MAX 5,33 5,20 4,19 0,55 0,50 1,40 1,53 – 2.082 ALL DIMENSIONS IN M.M. 1 2 3 1 = EMITTER 2 = COLLECTOR 3 = BASE ABSOLUTE MAXIMUM RATINGS Rating Symbol Collector-Base Voltage BV CBO 60 V Collector-Emitter Voltage BV CEO 50 V Emitter Base Voltage BVEBO 5 V Collector Current (DC) IC 100 mA Base Current (DC) IB 20 mA Total Power Dissipation @ Tamb = 25 °C P tot 500 mW Operating Storage Junction Temperature Range T j ,Tstg -55 to +150 °C Continental Device India Limited Data Sheet Value Unit Page 1 of 4 CSA733 ELECTRICAL CHARACTERISTICS (Ta=25 °C unless otherwise specified) Characteristic Collector Emitter Breakdown Voltage IC=1mA, IB=0 Collector Base Voltage IC=100µA, IE=0 Emitter Base Voltage IE=10µA, IC=0 Collector Cut-Off Current VCB =60V, IE=0 Emitter Cut-Off Current VEB=5V, IC=0 DC Current Gain VCE=6V, I C=1mA Collector Emitter Saturation Voltage IC=100mA, I B=10mA Base Emitter On Voltage IC=1mA, VCE=6V DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product VCE=6V, I C=10mA Common Base Output Capacitance VCB =10V, IE=0, f=1MHz Noise Figure VCE=6V, I C=0.3mA Rs=10kΩ, f=100Hz hFE CLASSIFICATION Continental Device India Limited Symbol Min Typ Max BV CEO 50 - - V BV CBO 60 - - V BVEBO 5 - - V ICBO - - 0.1 µA IEBO - - 0.1 µA hFE* 90 - 600 VCE(sat) - - 0.3 V V BE(on) 0.6 - 0.7 V fT 100 - - MHz C ob - - 6 pF NF - - 20 dB R 90-180 Data Sheet Q P 135=270 200-400 Unit K 300-600 Page 2 of 4 CSA733 Base Emitter On Voltage DC Current Gain 1000 VCE=–6V 500 V CE = – 6 V Collector Current I C (mA) 300 hFE DC Current Gain 100 50 30 10 5 3 0 –0.2 –0.4 –0.6 –0.8 –1.0 1 –0.1 –1.2 VBE (V), Base-Emitter Voltage IC (mA), Collector Current Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage I =10I VCE=–6V VBE (sat), VCE(sat) (V), Saturation Voltage fT (MHz), Current Gain-Bandwidth Product Current Gain-Bandwidth Product B VBE(sat) VCE(sat) IC (mA), Collector Current IC (mA), Collector Current Continental Device India Limited C Data Sheet Page 3 of 4 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 4 of 4