1CY7C1006B CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 495 mW • Low standby power — 275 mW • 2.0V data retention (optional) — 100 µW • Automatic power-down when deselected • TTL-compatible inputs and outputs Writing to the devices is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the four I/O pins (I/O0 through I/O3) is then written into the location specified on the address pins (A0 through A17). Reading from the devices is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the four I/O pins. Functional Description The CY7C106B and CY7C1006B are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip The four input/output pins (I/O0 through I/O3) are placed in a high-impedance state when the devices are deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE and WE LOW). The CY7C106B is available in a standard 400-mil-wide SOJ; the CY7C1006B is available in a standard 300-mil-wide SOJ. Logic Block Diagram Pin Configuration SOJ Top View A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 CE OE GND I/O3 SENSE AMPS A1 A2 A3 A4 A5 A6 A7 A8 A9 ROW DECODER INPUT BUFFER 512 x 512 x 4 ARRAY I/O2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A17 A16 A15 A14 A13 A12 A11 NC I/O3 I/O2 I/O1 I/O0 WE C106B–2 I/O1 I/O0 POWER DOWN CE WE OE A0 A 10 A 11 A 12 A 13 A 14 A 15 A 16 A 17 COLUMN DECODER C106B–1 Selection Guide 7C106B-12 7C1006B-12 7C106B-15 7C1006B-15 7C106B-20 7C1006B-20 7C106B-25 7C1006B-25 7C106B-35 Maximum Access Time (ns) 12 15 20 25 35 Maximum Operating Current (mA) 90 80 75 70 60 Maximum Standby Current (mA) 50 30 30 30 25 Cypress Semiconductor Corporation Document #: 38-05037 Rev. ** • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 Revised August 24, 2001 CY7C106B CY7C1006B Maximum Ratings Current into Outputs (LOW)......................................... 20 mA (Above which the useful life may be impaired. For user guidelines, not tested.) Static Discharge Voltage .......................................... >2001V (per MIL-STD-883, Method 3015) Storage Temperature ................................. –65°C to +150°C Latch-Up Current..................................................... >200 mA Ambient Temperature with Power Applied ............................................. –55°C to +125°C Operating Range Supply Voltage on VCC Relative to GND[1] .... –0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[1] ....................................–0.5V to VCC + 0.5V DC Input Voltage[1] .................................–0.5V to VCC + 0.5V Document #: 38-05037 Rev. ** Range Commercial Industrial Ambient Temperature[2] 0°C to +70°C –45°C to +85°C VCC 5V ± 10% Page 2 of 10 CY7C106B CY7C1006B Electrical Characteristics Over the Operating Range Parameter Description Test Conditions 7C106B-12 7C1006B-12 7C106B-15 7C1006B-15 7C106B-20 7C1006B-20 Min. Min. Min. Max. Max. VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA VIH Input HIGH Voltage 2.2 VCC +0.3 2.2 VCC +0.3 VIL Input LOW Voltage[1] –0.3 0.8 –0.3 IIX Input Load Current GND < VI < VCC –1 +1 IOZ Output Leakage Current GND < VI < VCC, Output Disabled –5 +5 IOS Output Short Circuit Current[3] VCC = Max., VOUT = GND ICC VCC Operating Supply Current ISB1 2.4 2.4 0.4 Max. 2.4 0.4 Unit V 0.4 V 2.2 VCC +0.3 V 0.8 –0.3 0.8 V –1 +1 –1 +1 µA –5 +5 –5 +5 µA –300 –300 –300 mA VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC 90 80 75 mA Automatic CE Power-Down Current —TTL Inputs Max. VCC, CE > VIH, VIN > VIH or VIN < VIL, f = fMAX 50 30 30 mA ISB2 Automatic CE Power-Down Current —CMOS Inputs Max. VCC, CE > VCC – 0.3V, VIN > VCC – 0.3V or VIN < 0.3V, f=0 10 10 10 mA VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA VIH Input HIGH Voltage VIL Input LOW Voltage[1] IIX Input Load Current GND < VI < VCC IOZ Output Leakage Current GND < VI < VCC, Output Disabled IOS Output Short Circuit Current[3] VCC = Max., VOUT = GND ICC VCC Operating Supply Current ISB1 ISB2 Com’l 2.4 2.4 0.4 V 0.4 V 2.2 VCC + 0.3 2.2 VCC + 0.3 V –0.3 0.8 –0.3 0.8 V –1 +1 –1 +1 µA –5 +5 –5 +5 µA –300 –300 mA VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC 70 60 mA Automatic CE Power-Down Current —TTL Inputs Max. VCC, CE > VIH, VIN > VIH or VIN < VIL, f = fMAX 30 25 mA Automatic CE Power-Down Current —CMOS Inputs Max. VCC, CE > VCC – 0.3V, VIN > VCC – 0.3V or VIN < 0.3V, f = 0 10 10 mA Com’l Notes: 1. VIL (min.) = –2.0V for pulse durations of less than 20 ns. 2. TA is the “instant on” case temperature. 3. Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds. Document #: 38-05037 Rev. ** Page 3 of 10 CY7C106B CY7C1006B Capacitance[4] Parameter CIN: Addresses CIN: Controls COUT Description Input Capacitance Test Conditions TA = 25°C, f = 1 MHz, VCC = 5.0V Max. 7 10 10 Output Capacitance Unit pF pF pF AC Test Loads and Waveforms R1 480Ω 5V OUTPUT OUTPUT R2 255Ω 30 pF ALL INPUT PULSES R1 480Ω 5V INCLUDING JIG AND SCOPE 3.0V 90% R2 GND 255Ω 5 pF INCLUDING JIG AND SCOPE (a) Equivalent to: OUTPUT Rise Time < 1V/ns (b) C106B–3 10% 90% 10% Fall Time < 1V/ns C106B–4 THÉVENIN EQUIVALENT 167Ω 1.73V Note: 4. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05037 Rev. ** Page 4 of 10 CY7C106B CY7C1006B Switching Characteristics Over the Operating Range[5] Parameter Description 7C106B-12 7C106B-15 7C106B-20 7C106B-25 7C1006B-12 7C1006B-15 7C1006B-20 7C1006B-25 7C106B-35 Min. Min. Max. Min. Max. Min. Max. Min. Max. Max. Unit READ CYCLE tRC Read Cycle Time tAA Address to Data Valid tOHA Data Hold from Address Change tACE CE LOW to Data Valid 12 15 20 tDOE OE LOW to Data Valid 6 7 8 tLZOE OE LOW to Low Z tHZOE OE HIGH to High Z[6, 7] tLZCE CE LOW to Low 12 Z[7] 3 CE HIGH to High tPU CE LOW to Power-Up tPD CE HIGH to Power-Down 20 15 3 0 3 6 7 12 25 35 ns 10 10 ns 3 ns 10 3 10 0 20 ns 0 10 8 15 ns 3 0 ns 35 0 8 3 0 35 25 3 0 7 3 0 25 20 3 0 6 Z[6, 7] tHZCE 15 12 ns 10 0 25 ns ns ns 35 ns WRITE CYCLE[8, 9] tWC Write Cycle Time 12 15 20 25 35 ns tSCE CE LOW to Write End 10 12 15 20 25 ns tAW Address Set-Up to Write End 10 12 15 20 25 ns tHA Address Hold from Write End 0 0 0 0 0 ns tSA Address Set-Up to Write Start 0 0 0 0 0 ns tPWE WE Pulse Width 10 12 15 20 25 ns tSD Data Set-Up to Write End 7 8 10 15 20 ns tHD Data Hold from Write End 0 0 0 0 0 ns 2 3 3 3 3 ns tLZWE tHZWE WE HIGH to Low Z[7] WE LOW to High Z[6, 7] 6 7 8 10 10 ns Notes: 5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30–pF load capacitance. 6. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage. 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 8. The internal write time of the memory is defined by the overlap of CE and WE LOW. CE and WE must be LOW to initiate a write, and the transition of either of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 9. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD. Document #: 38-05037 Rev. ** Page 5 of 10 CY7C106B CY7C1006B Data Retention Characteristics Over the Operating Range Parameter Conditions[10] Description VDR VCC for Data Retention ICCDR Data Retention Current tCDR[4] Chip Deselect to Data Retention Time tR[4] Operation Recovery Time Min. Max. 2.0 VCC = VDR = 2.0V, CE > VCC – 0.3V, VIN > VCC – 0.3V or VIN < 0.3V Unit V 250 µA 0 ns 200 µs Data Retention Waveform DATA RETENTION MODE 4.5V VCC 4.5V VDR > 2V tCDR tR CE C106B–5 Switching Waveforms Read Cycle No.1[11, 12] 1 tRC ADDRESS tOHA DATA OUT tAA PREVIOUS DATA VALID DATA VALID C106B–6 Read Cycle No. 2 (OE Controlled) [12, 13] ADDRESS tRC CE tACE OE tHZOE tDOE DATA OUT tLZOE HIGH IMPEDANCE tLZCE VCC SUPPLY CURRENT tHZCE HIGH IMPEDANCE DATA VALID tPD tPU 50% ICC 50% ISB C106B–7 Notes: 10. No input may exceed VCC +0.5V. 11. Device is continuously selected, OE and CE = VIL. 12. WE is HIGH for read cycle. 13. Address valid prior to or coincident with CE transition LOW. Document #: 38-05037 Rev. ** Page 6 of 10 CY7C106B CY7C1006B Switching Waveforms (continued) Write Cycle No. 1 (CE Controlled)[14, 15] tWC ADDRESS tSCE CE tSA tAW tHA tPWE WE tSD DATA I/O tHD DATA VALID C106B–8 Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[14, 15] tWC ADDRESS tSCE CE tAW tSA tHA tPWE WE OE tSD DATA I/O tHD DATA VALID tHZOE C106B–9 Notes: 14. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. 15. Data I/O is high impedance if OE = VIH. Document #: 38-05037 Rev. ** Page 7 of 10 CY7C106B CY7C1006B Switching Waveforms (continued) Write Cycle No. 3 (WE Controlled, OE LOW)[9, 15] tWC ADDRESS tSCE CE tAW tSA tHA tPWE WE tSD DATA I/O tHD DATA VALID tLZWE tHZWE C106B–10 Truth Table CE OE WE Input/Output Mode Power H X X High Z Power-Down Standby (ISB) L L H Data Out Read Active (ICC) L X L Data In Write Active (ICC) L H H High Z Selected, Outputs Disabled Active (ICC) Ordering Information Speed (ns) 12 15 20 25 35 Ordering Code CY7C106B-12VC CY7C1006B-12VC CY7C106B-15VC CY7C1006B-15VC CY7C106B-15VI CY7C1006B-15VI CY7C106B-20VC CY7C1006B-20VC CY7C106B-20VI CY7C1006B-20VI CY7C106B-25VC CY7C1006B-25VC CY7C106B-25VI CY7C1006B-25VI CY7C106B-35VC CY7C106B-35VI Document #: 38-05037 Rev. ** Package Name V28 V21 V28 V21 V28 V21 V28 V21 V28 V21 V28 V21 V28 V21 V28 V28 Package Type 28-Lead (400-Mil) Molded SOJ 28-Lead (300-Mil) Molded SOJ 28-Lead (400-Mil) Molded SOJ 28-Lead (300-Mil) Molded SOJ 28-Lead (400-Mil) Molded SOJ 28-Lead (300-Mil) Molded SOJ 28-Lead (400-Mil) Molded SOJ 28-Lead (300-Mil) Molded SOJ 28-Lead (400-Mil) Molded SOJ 28-Lead (300-Mil) Molded SOJ 28-Lead (400-Mil) Molded SOJ 28-Lead (300-Mil) Molded SOJ 28-Lead (400-Mil) Molded SOJ 28-Lead (300-Mil) Molded SOJ 28-Lead (400-Mil) Molded SOJ 28-Lead (400-Mil) Molded SOJ Operating Range Commercial Commercial Industrial Commercial Industrial Commercial Industrial Commercial Industrial Page 8 of 10 CY7C106B CY7C1006B Package Diagrams 28-Lead (300-Mil) Molded SOJ V21 51-85031-B 28-Lead (400-Mil) Molded SOJ V28 51-85032-A Document #: 38-05037 Rev. ** Page 9 of 10 © Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C106B CY7C1006B Document Title: CY7C106B, CY7C1006B 256K x 4 Static RAM Document Number: 38-05037 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 106831 09/17/01 SZV Change from Spec number: 38-00955 to 38-05037 Document #: 38-05037 Rev. ** Page 10 of 10