CYPRESS CY7C287-55WC

1CY 7C28 7
CY7C287
64K x 8 Reprogrammable Registered PROM
Features
put enable that can be programmed to be synchronous (ES) or
asynchronous (E). It is available in a 28-pin, 300-mil package.
The address set-up time is 45 ns and the time from clock HIGH
to output valid is 15 ns.
• CMOS for optimum speed/power
• Windowed for reprogrammability
• High speed
— tSA = 45 ns
— tCO = 15 ns
• Low power
— 120 mA
• On-chip, edge-triggered output registers
• Programmable synchronous or asynchronous output
enable
• EPROM technology, 100% programmable
• 5V ±10% VCC, commercial and military
• TTL-compatible I/O
• Slim 300-mil package
• Capable of withstanding >2001V static discharge
Functional Description
The CY7C287 is a high-performance 64K x 8 CMOS PROM.
The CY7C287 is equipped with an output register and an out-
The CY7C287 is available in a cerDIP package equipped with
an erasure window to provide reprogrammability. When exposed to UV light, the PROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming
algorithms.
The CY7C287 offers the advantage of low power, superior performance, and programming yield. The EPROM cell requires
only 12.5V for the supervoltage and low current requirements
allow for gang programming. The EPROM cells allow for each
memory location to be 100% tested with each cell being programmed, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that the product will meet DC and AC specification
limits after customer programming.
Reading the CY7C287 is accomplished by placing an active
LOW signal on E/E S. The contents of the memory location
addressed by the address lines (A0 − A 15) will become
available on the output lines (O0 − O 7) on the next rising of
CP.
Logic Block Diagram
Pin Configurations
CerDIP
Top View
A15
A14
A13
A12
A11
A10
A9
A8
O7
X
512x 1024
PROGRAMMABLE
ARRAY
ROW
ADDRESS
8 x 1 of 128
MULTIPLEXER
8
SENSE
AMPS
8-BIT
EDGETRIGGERED
REGISTER
O6
O5
O4
ADDRESS
DECODER
A7
A6
A5
A4
A3
O3
COLUMN
ADDRESS
O2
Y
O1
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
GND
1
28
2
27
3
26
4
25
5
24
6 7C287 23
22
7
21
8
9
20
10
19
11
18
12
17
13
16
14
15
VCC
A10
A11
A12
A13
A14
A15
CP
E/ES
O7
O6
O5
O4
O3
A2
A1
A0
C287-3
O0
LCC/PLCC
Top View
E/ES
CP
OE
REGISTER
PROGRAMMABLE
MULTIPLEXER
C287-1
A5
A4
A3
NC
A2
A1
A0
GND
O0
4 3 2 1 32 31 30
29
5
28
6
7C287
27
7
26
8
25
9
24
10
23
11
22
12
21
13
14151617 181920
A12
A13
A14
A15
NC
CP
E/ES
O7
GND
C287-2
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose •
CA 95134 •
408-943-2600
September 1994 – Revised December 1994
CY7C287
Selection Guide
7C287−45
7C287−55
7C287−65
Maximum Set-Up Time (ns)
45
55
65
Maximum Clock to Output (ns)
15
20
25
120
120
120
150
150
Maximum Operating Current (mA)
Com’l
Mil
UV Exposure ................................................ 7258 Wsec/cm 2
Maximum Ratings
Static Discharge Voltage ........................................... >2001V
(per MIL-STD-883, Method 3015.2)
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature .....................................−65°C to +150°C
Latch-Up Current ..................................................... >200 mA
Ambient Temperature with
Power Applied..................................................−55°C to +125°C
Operating Range
Range
Ambient
Temperature
VCC
Commercial
0°C to +70°C
5V ± 10%
Industrial[1]
−40°C to +85°C
5V ± 10%
Military[2]
−55°C to +125°C
5V ± 10%
Supply Voltage to Ground Potential .................−0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State .....................................................−0.5V to +7.0V
DC Input Voltage .................................................−3.0V to +7.0V
DC Program Voltage .....................................................13.0V
Electrical Characteristics Over the Operating Range[3]
7C287−45
Parameter
Description
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
7C287−55
Test Conditions
Min.
Max. Min.
VCC = Min., IOH = −2.0 mA
VCC = Min., IOL = 8.0 mA Com’l
2.4
2.4
0.4
Mil
VIH
Input HIGH Voltage
Guaranteed Input Logical HIGH
Voltage for Inputs
VIL
Input LOW Voltage
Guaranteed Input Logical LOW
Voltage for Inputs
IIX
Input Load Current
GND < VIN < VCC
VCD
Input Diode Clamp Voltage
IOZ
Output Leakage Current
GND < VOUT < VCC,
Output Disabled
−40
+40
−40
IOS
Output Short Circuit Current
VCC = Max., VOUT = GND[5]
−20
−90
−20
ICC
VCC Operating
Supply Current
VCC = Max.,
IOUT = 0 mA
VPP
Programming Supply Voltage
IPP
Programming Supply Current
VIHP
Input HIGH Programming
Voltage
VILP
Input LOW Programming
Voltage
2.0
VCC
2.0
0.8
−10
+10
Max.
7C287−65
Min.
V
0.4
0.4
0.4
0.4
VCC
2.0
V
VCC
V
0.8
V
−10
+10
µA
+40
−40
+40
µA
−90
−20
−90
mA
120
120
mA
150
150
0.8
−10
Max. Unit
2.4
+10
Note 4
Com’l
120
Mil
12
13
12
50
3.0
2
12
50
3.0
0.4
Notes:
1. Contact a Cypress representative for industrial temperature range specifications.
2. TA is the “instant on” case temperature.
3. See the last page of this specification for Group A subgroup testing information.
4. See Introduction to CMOS PROMs for general information on testing.
5. Short circuit test should not exceed 30 seconds.
13
13
V
50
mA
3.0
0.4
V
0.4
V
CY7C287
Capacitance[4]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
Max.
Unit
10
pF
10
pF
TA = 25°C, f = 1 MHz,
VCC = 5.0V
AC Test Loads and Waveform[4]
R1 500Ω
(658Ω MIL)
R1 500Ω
(658Ω MIL)
5V
5V
OUTPUT
ALL INPUT PULSES
OUTPUT
R2
333Ω
(403Ω MIL)
30 pF
5 pF
INCLUDING
JIG AND
C287-4
SCOPE
INCLUDING
JIG AND
SCOPE
(a) Normal Load
Equivalent to:
3.0V
R2
333Ω
(403Ω MIL)
90%
10%
90%
10%
GND
≤ 5 ns
≤ 5 ns
C287-6
C287-5
(b) High Z Load
THÉVENIN EQUIVALENT
OUTPUT
200Ω
250Ω
OUTPUT
2.0V
1.9V
Military
Commercial
C287-7
Switching Characteristics Over the Operating Range[3,4]
7C287−45
Parameter
Description
Min.
Max.
7C287−55
Min.
Max.
7C287−65
Min.
Max.
Unit
tSA
Address Set-Up to Clock HIGH
45
55
65
ns
tHA
Address Hold from Clock HIGH
0
0
0
ns
tCO
Clock HIGH to Output Valid
15
20
25
ns
tHZE
Output High Z from E
15
20
25
ns
tDOE
Output Valid from E
15
20
25
ns
tPWC
Clock Pulse Width
15
20
25
ns
tSEs[6]
tHEs[6]
tHZC[6]
tCOs[6]
ES Set-Up to Clock HIGH
12
15
18
ns
ES Hold from Clock HIGH
5
8
10
ns
Output High Z from CLK/ES
20
25
30
ns
Output Valid from CLK/ES
20
25
30
ns
Notes:
6. Parameters with synchronous ES option.
3
CY7C287
Switching Waveform
A0 − A15
tSA
tHA
tHA
ES
tSEs
tHEs
tSEs
tPWC
CP
tPWC
tCO
tHZC
O0 − O7
tCOs
VALID
HIGH Z
tHZE
tDOE
E
be within 1 inch of the lamp during erasure. Permanent damage may result if the PROM is exposed to high-intensity UV
light for an extended period of time. 7258 Wsec/cm2 is the
recommended maximum dosage.
Erasure Characteristics
Wavelengths of light less than 4000 Angstroms begin to erase
the CY7C287 in the windowed package. For this reason, an
opaque label should be placed over the window if the PROM
is exposed to sunlight or fluorescent lighting for extended periods of time.
Programming Modes
Programming support is available from Cypress as well as
from a number of third-party software vendors. For detailed
programming information, including a listing of software packages, please see the PROM Programming Information located
at the end of this section. Programming algorithms can be obtained from any Cypress representative.
The recommended dose of ultraviolet light for erasure is a
wavelength of 2537 angstroms for a minimum dose (UV intensity multiplied by exposure time) of 25 Wsec/cm2. For an ultraviolet lamp with a 12 mW/cm2 power rating, the exposure time
would be approximately 35 minutes. The CY7C287 needs to
Table 1. CY7C287 Mode Selection
Pin Function[7]
CP
A14
E, ES
A15
O 7 − O0
VIL/VIH
A14
VIL
A15
O7 − O0
Output Disable – Asynchronous
X
A14
VIH
A15
High Z
Output Disable – Synchronous
VIL/VIH
A14
VIH
A15
High Z
Mode: Other
PGM
LATCH
VFY
VPP
D7 − D0
Program
VILP
VILP
VIHP
VPP
D7 − D0
Program Verify
VIHP
VILP
VILP
VPP
O7 − O0
Program Inhibit
VIHP
VILP
VIHP
VPP
High Z
Blank Check
VIHP
VILP
VILP
VPP
Zeros
Mode: Read or Output Disable
Synchronous Read
Notes:
7. X = “don’t care” but not to exceed VCC ±5%. X can be VIL ir VIH.
4
CY7C287
DIP
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
D0
D1
D2
GND
LCC
1
2
3
4
5
6 7C287
7
8
9
10
11
12
13
28
27
26
14
15
VCC
A10
A11
A12 /A14
A13 /A15
25
24
23
22
21
A5
A4
A3
NC
A2
A1
A0
GND
D0
LATCH
VPP
PGM
VFY
D7
D6
D5
D4
D3
C287-9
20
19
18
17
16
4 3 2 1 32 31 30
29
5
28
6
7C287
27
7
26
8
25
9
24
10
23
11
22
12
21
13
14 15 16 17 18 19 20
A12 /A14
A13 /A15
LATCH
VPP
NC
PGM
VFY
D7
GND
C287-10
Figure 1. Programming Pinouts
Architecture Configuration Bits
Architecture
Bit
E/ES
Architecture Verify
D0
Device
7C287
D0
Function
0 = Erased
Asynchronous Output Enable (Pin 20 = E)
1 = PGMED
Synchronous Output Enable (Pin 20 = ES)
Bit Map
Programmer Address
(Hex.)
RAM Data
0000
.
.
FFFF
10000
Data
.
.
Data
Control Byte
Architecture Byte (10000H)
D7
D0
C7 C6 C5 C4 C3 C2 C1C0
5
CY7C287
Ordering Information[8]
Speed
(ns)
Ordering Code
45
55
65
Package
Name
Operating
Range
Package Type
CY7C287−45JC
J65
32-Lead Plastic Leaded Chip Carrier
CY7C287−45PC
P21
28-Lead (300-Mil) Molded DIP
Commercial
CY7C287−45WC
W22
28-Lead (300-Mil) Windowed CerDIP
CY7C287−55JC
J65
32-Lead Plastic Leaded Chip Carrier
CY7C287−55PC
P21
28-Lead (300-Mil) Molded DIP
CY7C287−55WC
W22
28-Lead (300-Mil) Windowed CerDIP
CY7C287−55DMB
D22
28-Lead (300-Mil) CerDIP
CY7C287−55LMB
L55
32-Pin Rectangular Leadless Chip Carrier
CY7C287−55QMB
Q55
32-Pin Windowed Rectangular Leadless Chip Carrier
CY7C287−55WMB
W22
28-Lead (300-Mil) Windowed CerDIP
CY7C287−65JC
J65
32-Lead Plastic Leaded Chip Carrier
CY7C287−65PC
P21
28-Lead (300-Mil) Molded DIP
CY7C287−65WC
W22
28-Lead (300-Mil) Windowed CerDIP
CY7C287−65DMB
D22
28-Lead (300-Mil) CerDIP
CY7C287−65LMB
L55
32-Pin Rectangular Leadless Chip Carrier
CY7C287−65QMB
Q55
32-Pin Windowed Rectangular Leadless Chip Carrier
CY7C287−65WMB
W22
28-Lead (300-Mil) Windowed CerDIP
Commercial
Military
Commercial
Military
Notes:
8. Most of these products are available in industrial temperature range. Contact a Cypress representative for specifications and product availability.
MILITARY SPECIFICATIONS
Group A Subgroup Testing
Switching Characteristics
DC Characteristics
Parameter
Subgroups
tSA
7, 8, 9, 10, 11
Parameter
Subgroups
tHA
7, 8, 9, 10, 11
VOH
1, 2, 3
tCO
7, 8, 9, 10, 11
VOL
1, 2, 3
tDOE
7, 8, 9, 10, 11
VIH
1, 2, 3
tPWC
7, 8, 9, 10, 11
VIL
1, 2, 3
IIX
1, 2, 3
IOZ
1, 2, 3
ICC
1, 2, 3
Document #: 38−00363
6
CY7C287
Package Diagrams
28-Lead (300-Mil) CerDIP D22
MIL-STD-1835
32-Lead Plastic Leaded Chip Carrier J65
D-15 Config.A
32-Pin Rectangular Leadless Chip Carrier L55
32-Pin Windowed Rectangular Leadless Chip Carrier Q55
MIL-STD-1835 C-12
MIL-STD-1835 C-12
7
CY7C287
Package Diagrams
28-Lead (300-Mil) Molded DIP P21
28-Lead (300-Mil) Windowed CerDIP W22
MIL-STD-1835
D-15 Config.A
© Cypress Semiconductor Corporation, 1994. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.