DCR818SG DCR818SG Phase Control Thyristor Advance Information Supersedes October 2000 version, DS4241-5.1 DS4241-6.0 July 2001 FEATURES KEY PARAMETERS ■ Double Side Cooling VDRM 4800V ■ High Surge Capability IT(AV) 529A ITSM 7500A APPLICATIONS dVdt* 1000V/µs ■ High Power Drives dI/dt 150A/µs ■ High Voltage Power Supplies *Higher dV/dt selections available ■ DC Motor Control ■ Welding ■ Battery Chargers VOLTAGE RATINGS Type Number DCR818SG48 DCR818SG47 DCR818SG46 DCR818SG45 DCR818SG44 Repetitive Peak Voltages VDRM VRRM V Conditions 4800 4700 4600 4500 4400 Tvj = 0˚ to 125˚C, IDRM = IRRM = 75mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V Respectively Lower voltage grades available. Outline type code: G. See Package Details for further information. Fig.1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR818SG46 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/8 www.dynexsemi.com DCR818SG CURRENT RATINGS Tcase = 60˚C unless stated otherwise Symbol Parameter Conditions Max. Units 529 A Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 830 A Continuous (direct) on-state current - 756 A 349 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 548 A Continuous (direct) on-state current - 464 A Conditions Max. Units 425 A IT Half wave resistive load CURRENT RATINGS Tcase = 80˚C unless stated otherwise Symbol Parameter Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 667 A Continuous (direct) on-state current - 595 A 285 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 447 A Continuous (direct) on-state current - 360 A IT Half wave resistive load 2/8 www.dynexsemi.com DCR818SG SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current Conditions Max. Units 10ms half sine; Tcase = 125oC 6.0 kA VR = 50% VRRM - 1/4 sine 0.18 x 106 A2s 10ms half sine; Tcase = 125oC 7.5 kA VR = 0 0.28 x 106 A2s I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. Units dc - 0.032 o Anode dc - 0.064 o Cathode dc - 0.064 o C/W Double side - 0.008 o C/W Single side - 0.016 o C/W On-state (conducting) - 135 o Reverse (blocking) - 125 o Storage temperature range –55 125 o Clamping force 10.8 13.2 Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 12kN with mounting compound C Virtual junction temperature C C kN 3/8 www.dynexsemi.com DCR818SG DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Typ. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC - 50 mA dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. - 1000 V/µs - 75 A/µs Rate of rise of on-state current From 67% VDRM to1000A Gate source 20V, 10Ω tr ≤ 0.5µs. Tj = 125oC. Repetitive 50Hz dI/dt Non-repetitive - 150 A/µs IRRM/IDRM Threshold voltage At Tvj = 125oC - 1.4 V rT On-state slope resistance At Tvj = 125oC - 1.7 mΩ tgd Delay time VD = 67% VDRM, Gate source 30V, 15Ω Rise time 0.5µs, Tj = 25oC - 1.7 µs IL Latching current Tj = 25oC, VD = 5V, Gate source = 20V, 10Ω 100 1000 mA IH Holding current Tj = 25oC, Rg-k = ∞ 60 500 mA tq Turn-off time 450 - µs Max. Units VT(TO) IT = 1000A, tp = 1ms, Tj = 125˚C, VRM = 100V, dIRR/dt = 10A/µs, dVDR/dt = 20V/µs to 3000V GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3.0 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 300 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 10 A PGM Peak gate power See table, fig.5 150 W PG(AV) Mean gate power 5 W 4/8 www.dynexsemi.com DCR818SG CURVES 2500 2000 Measured under pulse conditions Tj = 125˚C d.c. Half wave 1500 Mean power dissipation - (W) Instantaneous on-state current, IT - (A) 2000 1500 1000 3 phase 6 phase 1000 500 500 0 0 1.0 3.0 2.0 4.0 5.0 Instantaneous on-state voltage, VT - (V) Fig.2 Maximum (limit) on-state characteristics 6.0 0 0 200 400 600 800 Mean on-state current, IT(AV) - (A) Fig.3 Dissipation curves VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT Where A = 0.650046 B = –0.018621 C = 0.000589 D = 0.063601 these values are valid for Tj = 125˚C for IT 500A to 2500A 5/8 www.dynexsemi.com DCR818SG 100 10000 Gate trigger voltage, VGT - (V) Total stored charge, QS - (µC) 1 pp er lim it 99 % Tj = 125˚C VGD 1.0 10 Rate of decay of on-state current, dI/dt - (A/µs) Lo 0.1 0.001 100 w er lim it 1% 0.01 0.1 1 Gate trigger current, IGT - (A) Fig.4 Stored charge 10 IFGM Fig.5 Gate characteristics 12.5 0.1 I2t = Î2 x t 2 Anode side cooled Double side cooled 0.01 Conduction Effective thermal resistance Junction to case ˚C/W d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.001 0.001 0.01 0.1 Time - (s) Double side 0.032 0.034 0.044 0.057 1.0 Single side 0.064 0.066 0.076 0.089 10 Fig.6 Transient thermal impedance - junction to case Peak half sine wave on-state current - (kA) 10.0 7.5 200 5.0 150 I2t 2.5 100 0 1 10 ms 1 2 3 45 10 I2t value - (A2s x 103) Thermal Impedance - junction to case - (˚C/W) 0W 15 0W Tj = 25˚C U IRM W Tj = -40˚C tp = 1ms dI/dt 100 0.1 W 25 2W 10 IT QS Frequency Hz 50 100 400 150 150 150 150 150 125 150 150 100 150 100 25 20 50 Pulse width µs 100 200 500 1ms 10ms W 10 4W 1000 Table gives pulse power PGM in Watts 10 IT = 1000A VR = 100V Conditions: Tj = 125˚C QS is total integral stored charge 50 20 30 50 Cycles at 50Hz Duration Fig.7 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125˚C) 6/8 www.dynexsemi.com DCR818SG PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes fl3.6x2.0 deep (in both electrodes) Cathode tab Cathode fl58.5 max fl34 nom 27.0 25.4 fl1.5 Gate fl34 nom Anode Nominal weight: 250g Clamping force: 12kN ±10% Lead lenght: 420mm Lead terminal connector: M4 ring Package outline type code: G 7/8 www.dynexsemi.com DCR818SG POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4241-6 Issue No. 6.0 July 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 8/8 www.dynexsemi.com