DCR1002SF DCR1002SF Phase Control Thyristor Advance Information Replaces April 2000 version, DS4243-4.3 DS4243-5.0 July 2001 FEATURES KEY PARAMETERS ■ Double Side Cooling VDRM 1400V ■ High Surge Capability IT(AV) 1850A ITSM 32500A dVdt* 1000V/µs dI/dt 1000A/µs ■ Low Turn-on Losses APPLICATIONS ■ High Power Converters *Higher dV/dt selections available ■ High Voltage Power Supplies ■ DC Motor Control VOLTAGE RATINGS Type Number DCR1002SF14 DCR1002SF13 DCR1002SF12 DCR1002SF11 DCR1002SF10 Repetitive Peak Voltages VDRM VRRM V Conditions 1400 1300 1200 1100 1000 Tvj = 0˚ to 125˚C, IDRM = IRRM = 100mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. ORDERING INFORMATION Outline type code: F See Package Details for further information. Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1002SF12 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/9 www.dynexsemi.com DCR1002SF CURRENT RATINGS Tcase = 60˚C unless stated otherwise. Symbol Parameter Conditions Max. Units 1850 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 2900 A Continuous (direct) on-state current - 2668 A 1190 A IT Half wave resistive load Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 1870 A Continuous (direct) on-state current - 1550 A Conditions Max. Units 1430 A IT Half wave resistive load CURRENT RATINGS Tcase = 80˚C unless stated otherwise. Symbol Parameter Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 2245 A Continuous (direct) on-state current - 1780 A 900 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 1414 A Continuous (direct) on-state current - 1065 A IT Half wave resistive load 2/9 www.dynexsemi.com DCR1002SF SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current Conditions Max. Units 10ms half sine; Tcase = 125oC 26 kA VR = 50% VRRM - 1/4 sine 3.38 x 106 A2s 10ms half sine; Tcase = 125oC 32.5 kA VR = 0 5.28 x 106 A2s I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. Units dc - 0.018 o Anode dc - 0.036 o Cathode dc - 0.036 o Double side - 0.003 o Single side - 0.006 o On-state (conducting) - 135 o Reverse (blocking) - 125 o Storage temperature range –55 125 o Clamping force 18.0 22.0 Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 19.5kN with mounting compound C/W C/W C/W C Virtual junction temperature C C kN 3/9 www.dynexsemi.com DCR1002SF DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Typ. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC - 100 mA dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. - 1000 V/µs - 500 A/µs Rate of rise of on-state current From 80% VDRM to 1000A Gate source 20V, 10Ω tr = 0.5µs to JEDEC RS397 Repetitive 50Hz dI/dt Non-repetitive - 1000 A/µs IRRM/IDRM Threshold voltage At Tvj = 125oC - 0.9 V rT On-state slope resistance At Tvj = 125oC - 0.17 mΩ tgd Delay time VD = 67% VDRM, Gate source 30V, 15Ω Rise time 0.5µs, Tj = 25oC - 2 µs tq Turn-off time IT = 800A, tp = 1ms, Tj = 125˚C, VRM = 50V, dIRR/dt = 20A/µs, VDR = 67% VDRM, dVDR/dt = 20V/µs linear - 200 µs IL Latching current Tj = 25oC, VD = 5V - 350 mA IH Holding current Tj = 25oC, Rg-k = ∞ - 100 mA Max. Units VT(TO) GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3.5 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 200 mA VGD Gate non-trigger voltage At 67% VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 30 A PGM Peak gate power See table, gate characteristics curve 150 W PG(AV) Mean gate power 10 W 4/9 www.dynexsemi.com DCR1002SF CURVES 6000 500 Measured under pulse conditions. Conditions: Tj = 125˚C 400 Mean power dissipation - (W) Instantaneous on-state current, IT - (A) 5000 4000 3000 2000 300 200 dc 100 1000 1/2 wave 3 phase 6 phase 0 0.5 0.75 1.00 1.25 1.50 1.75 Instantaneous on-state voltage, VT - (V) Fig.2 Maximum (limit) on-state characteristics 2.00 0 0 500 1000 Mean on-state current - (A) 1500 Fig.3 Power dissipation curves VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT Where A = –0.6475 B = 0.3079 C = 0.0002787 D = –0.02311 these values are valid for Tj = 125˚C for IT 500A to to 6000A 5/9 www.dynexsemi.com DCR1002SF 10000 10000 Conditions: IT = 1000A, VR = –100V, Tj = 125˚C Conditions: IT = 1000A, VR = –100V, Tj = 125˚C QS is total integral stored charge Reverse recovery current, IRR - (A) Total stored charge, QS - (µC) Max IRR Max QS Min QS 1000 Min IRR 1000 IT QS dI/dt IRR 100 0.1 1.0 10 100 0.1 100 Rate of decay of on-state current, dI/dt - (A/µs) Fig.4 Stored charge Pulse width µs 400 150 125 100 25 - 10 r lim i Tj = 125˚C pe Up 1 VGD 0.1 0.001 e Low 0.01 Anode side cooled Double side cooled 0.01 % t 95 r lim it 5 % Tj = 25˚C Tj = -40˚C Gate trigger voltage, VGT - (V) 100 150 150 150 50 - 0W 10 W 50 50 150 150 150 150 20 100 0.1 Table gives pulse power PGM in Watts W 20 W 10 5W 100 200 500 1ms 10ms Frequency Hz 10 Fig.5 Reverse recovery current Thermal Impedance - Junction to case (˚C/W) 100 1.0 Rate of decay of on-state current, dI/dt - (A/µs) Region of certain triggering 0.1 d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 1 Gate trigger current, IGT - (A) Fig.6 Gate characteristics Conduction 10 0.001 0.001 0.01 0.1 Effective thermal resistance Junction to case ˚C/W Double side 0.018 0.021 0.022 0.025 1.0 Anode side 0.036 0.038 0.040 0.043 10 Time - (s) Fig.6 Transient thermal impedance - junction to case 6/9 www.dynexsemi.com DCR1002SF 70 I2t = Î2 x t 2 50 5 40 30 4 I2t 3 20 10 1 10 ms 1 2 3 45 10 I2t value - (A2s x 106) Peak half sine wave on-state current - (kA) 60 2 20 30 50 Cycles at 50Hz Duration Fig.7 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125˚C) 7/9 www.dynexsemi.com DCR1002SF PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6x2.0 deep (in both electrodes) Cathode tab Cathode Ø76 max Ø48 nom 27.0 25.4 Ø1.5 Gate Ø48 nom Anode Nominal weight: 450g Clamping force: 19.5kN ± 10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: F 8/9 www.dynexsemi.com DCR1002SF POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes. Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4243-5 Issue No. 5.0 July 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 9/9 www.dynexsemi.com